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公开(公告)号：US08810322B2
公开(公告)日：2014-08-19
申请号：US13295683
申请日：2011-11-14
CPC分类号： H03B21/00 , H01L23/49816 , H01L23/645 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15311 , H01L2924/19015 , H01L2924/3011 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.
摘要翻译： 宽带频率发生器具有用于不同频带的两个或更多个振荡器，在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上，通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路，以增加另一个振荡器的带宽，反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。
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公开(公告)号：US08044739B2
公开(公告)日：2011-10-25
申请号：US12480966
申请日：2009-06-09
IPC分类号： H03B5/08
CPC分类号： H03B5/1206 , H03B5/1265 , H03J2200/10
摘要： A capacitance switching element includes first and second capacitors connected in series by transistors. The gates of the transistors are biased by a first signal through one set of resistors, and the sources and drains are biased by a second signal through a second set of resistors. The signals are level-shifted and may be complimentary. To turn the element ON, the first signal may be set to VDD and the second signal may be set to zero. To turn the element OFF, the first signal may be set to a multiple of VDD/2 and the second signal may be set to the multiple plus one of VDD/2. When the element is used in an oscillator tuning circuit, the voltage stress on the transistors is reduced and the transistors may be fabricated with thin oxide. The oscillator may be used in a transceiver of a cellular access terminal.
摘要翻译： 电容开关元件包括由晶体管串联连接的第一和第二电容器。 晶体管的栅极通过一组电阻器通过第一信号偏置，并且源极和漏极通过第二组电阻器被第二信号偏置。 信号是水平位移的，可能是免费的。 为了打开元件，第一个信号可以设置为VDD，第二个信号可以设置为零。 要关闭元件，第一个信号可以设置为VDD / 2的倍数，第二个信号可以设置为VDD / 2的倍数。 当元件用于振荡器调谐电路时，晶体管上的电压应力降低，并且晶体管可以用薄氧化物制造。 振荡器可以用在蜂窝接入终端的收发机中。
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公开(公告)号：US20110089991A1
公开(公告)日：2011-04-21
申请号：US12603379
申请日：2009-10-21
IPC分类号： H03K17/687
CPC分类号： H03K19/018521 , H03K17/6872 , H03K19/00361 , H03K19/20
摘要： An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair. The technique thereby reduces peak gate-to-drain voltages and allows for improved reliability of the MOS devices in a configuration amenable to low phase noise and low power consumption.
摘要翻译： 用于压控振荡器（VCO）的RF缓冲电路包括用于选择性地翻转输出电压波形的相位的动态偏置电路。 在CMOS实现中，在输出路径中采用PMOS / NMOS对。 在高（电压）摆动模式条件期间，输出的相位被翻转，使得输出波形与PMOS / NMOS对的栅极处出现的电压同相。 因此，该技术降低了峰值栅极至漏极电压，并且允许在具有低相位噪声和低功耗的配置中提高MOS器件的可靠性。
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公开(公告)号：US20100308924A1
公开(公告)日：2010-12-09
申请号：US12477651
申请日：2009-06-03
IPC分类号： H03B5/08
CPC分类号： H03B21/00 , H01L23/49816 , H01L23/645 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15311 , H01L2924/19015 , H01L2924/3011 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.
摘要翻译： 宽带频率发生器具有用于不同频带的两个或更多个振荡器，在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上，通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路，以增加另一个振荡器的带宽，反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。
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公开(公告)号：US08058934B2
公开(公告)日：2011-11-15
申请号：US12477651
申请日：2009-06-03
CPC分类号： H03B21/00 , H01L23/49816 , H01L23/645 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15311 , H01L2924/19015 , H01L2924/3011 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.
摘要翻译： 宽带频率发生器具有用于不同频带的两个或更多个振荡器，在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上，通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路，以增加另一个振荡器的带宽，反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。
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公开(公告)号：US20100321124A1
公开(公告)日：2010-12-23
申请号：US12486607
申请日：2009-06-17
IPC分类号： H03B5/12
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1225 , H03B5/1243 , H03B5/1265 , H03B5/1268
摘要： An oscillator includes a resonator, a first and a second p-type transistor, and a first and a second n-type transistor. The resonator has a first terminal and a second terminal. The first p-type transistor is switchably connected to the first terminal while the second p-type transistor is switchably connected to the second terminal. A first drain of the first n-type transistor and the second drain of the second n-type transistor are electrically connected to the first terminal and the second terminal, respectively. The oscillator is capable of operating in an NMOS only mode and in a CMOS mode.
摘要翻译： 振荡器包括谐振器，第一和第二p型晶体管，以及第一和第二n型晶体管。 谐振器具有第一端子和第二端子。 第一p型晶体管可切换地连接到第一端子，而第二p型晶体管可切换地连接到第二端子。 第一n型晶体管的第一漏极和第二n型晶体管的第二漏极分别电连接到第一端子和第二端子。 振荡器能够工作在仅NMOS模式和CMOS模式。
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公开(公告)号：US08415991B2
公开(公告)日：2013-04-09
申请号：US13406675
申请日：2012-02-28
IPC分类号： H03K3/00
CPC分类号： H03K19/018521 , H03K17/6872 , H03K19/00361 , H03K19/20
摘要： A method includes setting a mode of operation of a buffer circuit outputting an output signal. The mode of operation is set to a first mode of operation or a second mode of operation. The output signal is substantially in-phase with an input signal received by the buffer circuit when the mode of operation is the first mode. The output signal is substantially out of phase with the input signal when the mode of operation is the second mode.
摘要翻译： 一种方法包括设置输出输出信号的缓冲电路的工作模式。 操作模式被设置为第一操作模式或第二操作模式。 当操作模式是第一模式时，输出信号与由缓冲电路接收的输入信号基本上同相。 当操作模式是第二模式时，输出信号与输入信号基本上不同相。
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公开(公告)号：US20120068777A1
公开(公告)日：2012-03-22
申请号：US13295683
申请日：2011-11-14
IPC分类号： H03B5/12
CPC分类号： H03B21/00 , H01L23/49816 , H01L23/645 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15311 , H01L2924/19015 , H01L2924/3011 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.
摘要翻译： 宽带频率发生器具有用于不同频带的两个或更多个振荡器，在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上，通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路，以增加另一个振荡器的带宽，反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。
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9.发明申请ENHANCING DEVICE RELIABILITY FOR VOLTAGE CONTROLLED OSCILLATOR (VCO) BUFFERS UNDER HIGH VOLTAGE SWING CONDITIONS 有权在高电压条件下提高电压控制振荡器（VCO）缓冲器的设备可靠性公开(公告)号：US20100327986A1
公开(公告)日：2010-12-30
申请号：US12825221
申请日：2010-06-28
摘要： A circuit for a voltage controlled oscillator (VCO) buffer is described. The circuit includes a first capacitor connected to an input of the VCO buffer that is connected to a VCO core. The circuit also includes a second capacitor connected to the input of the VCO buffer and the gate of a p-type metal-oxide-semiconductor field effect (PMOS) transistor. The circuit further includes a first switch connected to the first capacitor and the gate of the PMOS transistor. The circuit also includes a third capacitor connected to the input of the VCO buffer. The circuit further includes a fourth capacitor connected to the input of the VCO buffer and the gate of an n-type metal-oxide-semiconductor field effect (NMOS) transistor. The circuit also includes a second switch connected to the third capacitor and the gate of the NMOS transistor.
摘要翻译： 描述了用于压控振荡器（VCO）缓冲器的电路。 电路包括连接到VCO缓冲器的输入的第一电容器，其连接到VCO核心。 电路还包括连接到VCO缓冲器的输入端和p型金属氧化物半导体场效应（PMOS）晶体管的栅极的第二电容器。 电路还包括连接到第一电容器和PMOS晶体管的栅极的第一开关。 该电路还包括连接到VCO缓冲器的输入的第三电容器。 电路还包括连接到VCO缓冲器的输入端和n型金属氧化物半导体场效应（NMOS）晶体管的栅极的第四电容器。 电路还包括连接到第三电容器和NMOS晶体管的栅极的第二开关。
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10.发明授权Enhancing device reliability for voltage controlled oscillator (VCO) buffers under high voltage swing conditions 有权在高电压摆幅条件下提高压控振荡器（VCO）缓冲器的器件可靠性公开(公告)号：US08242854B2
公开(公告)日：2012-08-14
申请号：US12825221
申请日：2010-06-28
摘要： A circuit for a voltage controlled oscillator (VCO) buffer is described. The circuit includes a first capacitor connected to an input of the VCO buffer that is connected to a VCO core. The circuit also includes a second capacitor connected to the input of the VCO buffer and the gate of a p-type metal-oxide-semiconductor field effect (PMOS) transistor. The circuit further includes a first switch connected to the first capacitor and the gate of the PMOS transistor. The circuit also includes a third capacitor connected to the input of the VCO buffer. The circuit further includes a fourth capacitor connected to the input of the VCO buffer and the gate of an n-type metal-oxide-semiconductor field effect (NMOS) transistor. The circuit also includes a second switch connected to the third capacitor and the gate of the NMOS transistor.
摘要翻译： 描述了用于压控振荡器（VCO）缓冲器的电路。 电路包括连接到VCO缓冲器的输入的第一电容器，其连接到VCO核心。 电路还包括连接到VCO缓冲器的输入端和p型金属氧化物半导体场效应（PMOS）晶体管的栅极的第二电容器。 电路还包括连接到第一电容器和PMOS晶体管的栅极的第一开关。 该电路还包括连接到VCO缓冲器的输入的第三电容器。 电路还包括连接到VCO缓冲器的输入端和n型金属氧化物半导体场效应（NMOS）晶体管的栅极的第四电容器。 电路还包括连接到第三电容器和NMOS晶体管的栅极的第二开关。
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