Clock generation for timing communications with ranks of memory devices

    公开(公告)号:US11630788B2

    公开(公告)日:2023-04-18

    申请号:US16921061

    申请日:2020-07-06

    Applicant: Rambus Inc.

    Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

    Clock Generation for Timing Communications with Ranks of Memory Devices

    公开(公告)号:US20250053524A1

    公开(公告)日:2025-02-13

    申请号:US18807548

    申请日:2024-08-16

    Applicant: Rambus Inc.

    Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

    QUAD-DATA-RATE (QDR) HOST INTERFACE IN A MEMORY SYSTEM

    公开(公告)号:US20230112159A1

    公开(公告)日:2023-04-13

    申请号:US17962362

    申请日:2022-10-07

    Applicant: Rambus Inc.

    Inventor: Lei Luo John Eble

    Abstract: Technologies for converting quad data rates on a host interface to double data rates on a memory interface are described. One memory module includes a data buffer device with a host-side interface circuit that sends or receives first data to and from a host device at a quad data rate and a memory-side interface circuit that sends or receives second data to and from a set of memory devices at a first specified data rate that is less than the quad data rate. The memory module includes conversion circuitry to down-convert the first data at the quad data rate to the second data at the first specified data rate and up-convert the second data at the first specified data rate to the first data at the quad data rate.

    Clock generation for timing communications with ranks of memory devices

    公开(公告)号:US10162772B2

    公开(公告)日:2018-12-25

    申请号:US15424714

    申请日:2017-02-03

    Applicant: Rambus Inc.

    Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

    Clock Generation for Timing Communications with Ranks of Memory Devices

    公开(公告)号:US20210049118A1

    公开(公告)日:2021-02-18

    申请号:US16921061

    申请日:2020-07-06

    Applicant: Rambus Inc.

    Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

    Clock generation for timing communications with ranks of memory devices

    公开(公告)号:US10705990B2

    公开(公告)日:2020-07-07

    申请号:US16228695

    申请日:2018-12-20

    Applicant: Rambus Inc.

    Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

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