摘要:
A digital scan chain system having test scan has a plurality of flip-flop modules, each of the plurality of flip-flop modules having a first data bit input, a second data bit input, a test bit input, a clock input, a first data bit output, a second data bit output, and a test bit output. The test bit output of a first flip-flop module is directly connected to the test bit input of a second flip-flop module with no intervening circuitry. First and second multiplexed master/slave flip-flops are directly serially connected. A clocked latch is coupled to the output of the second multiplexed master/slave flip-flop and provides the test bit output. The clocked latch is clocked only during a test mode to save power.
摘要:
A digital scan chain system having test scan has a plurality of flip-flop modules, each of the plurality of flip-flop modules having a first data bit input, a second data bit input, a test bit input, a clock input, a first data bit output, a second data bit output, and a test bit output. The test bit output of a first flip-flop module is directly connected to the test bit input of a second flip-flop module with no intervening circuitry. First and second multiplexed master/slave flip-flops are directly serially connected. A clocked latch is coupled to the output of the second multiplexed master/slave flip-flop and provides the test bit output. The clocked latch is clocked only during a test mode to save power.
摘要:
A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, the second node is coupled to a third node to couple the first data signal to the third node. The first node is decoupled from the second node and a first step of latching the first data signal at the third node is performed, wherein the first step of latching is through the second node while the second node is coupled to the third node. The second node is decoupled from the third node and a second step of latching is performed wherein the first data signal latched at the third node while the second node is decoupled from the third node.
摘要:
A memory device includes a latch having an input to receive a bit value, an input to receive a clock signal, and an output to provide a latched bit value based on the clock signal. The memory device further includes a bit cell including a storage component, and a write row driver configured to enable write access to the bit cell to store the latched bit value at the storage component for a first phase and a second phase of a cycle of the clock signal, the second phase following the first phase, and a read row driver configured to disable read access to the bit cell for the first phase of the cycle of the clock signal and to enable read access to the bit cell for the second phase of the cycle of the clock signal.
摘要:
A storage device and a method in the storage element, where the storage element has a first data storage node and a second data storage node and where the first data storage node is coupled to a bit line via a first pass transistor and where the second data storage node is coupled to a complementary bit line via a second pass transistor, is provided. The method includes performing a clear operation on the first data storage node and the second data storage node by providing a clear signal to a first clear transistor coupled to the first data storage node and a second clear transistor coupled to the second data storage node.
摘要:
A method and data processing system for accessing an entry in a memory array by placing a tag memory unit (114) in parallel with an operand adder circuit (112) to enable tag lookup and generation of speculative way hit/miss information (126) directly from the operands (111, 113) without using the output sum of the operand adder. PGZ-encoded address bits (0:51) from the operands (111, 113) are applied with a carry-out value (Cout48) to a content-addressable memory array (114) to generate two speculative hit/miss signals. A sum value (EA51) computed from the least significant base and offset address bits determines which of the speculative hit/miss signals is selected for output (126).
摘要:
A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, the second node is coupled to a third node to couple the first data signal to the third node. The first node is decoupled from the second node and a first step of latching the first data signal at the third node is performed, wherein the first step of latching is through the second node while the second node is coupled to the third node. The second node is decoupled from the third node and a second step of latching is performed wherein the first data signal latched at the third node while the second node is decoupled from the third node.
摘要:
A multiple port memory has a word line driver that provides a word line signal to access a first write port of a multiple port memory cell in an array of multiple port memory cells during a write operation. A first logic circuit has a first input for receiving a first port selection signal, a second input for receiving a disable signal, and an output. A buffer circuit has an input coupled to the output of the first logic circuit, and an output for providing the word line signal. The disable signal is asserted to prevent the word line driver from accessing the first write port when a second write port of the multiple port memory cell is accessed during the write operation and the second write port has a higher priority than the first write port.
摘要:
A variable switching point inverter (30) is disclosed which lowers the threshold voltage lowered for both rising and falling edge input voltages (VIN) by changing the P/N ratio of the inverter based on the delayed output state (VOUT) of the inverter. The variable switching point inverter may be constructed as a CMOS integrated circuit with a first inverter stage (33, 34) coupled in parallel to a second inverter stage (35, 36) having extra PMOS (37) and NMOS (38) transistors connected to VDD and VSS, respectively, where the extra PMOS and NMOS transistors are controlled by the delayed output signal (40) generated by a delay element (39) coupled to the output of the first inverter stage. By using a delayed feed back signal (40) to control the extra PMOS and NMOS gates (37, 38), the switching point voltage of the first inverter stage (33, 34) is altered, depending on whether the input transitions are high-to-low or low-to-high.
摘要翻译:公开了一种可变开关点逆变器(30),其通过基于延迟输出来改变逆变器的P / N比来降低上升沿和下降沿输入电压(V IN IN)降低的阈值电压 状态(V OUT OUT)。 可变开关点反相器可以被构造为具有与具有额外的PMOS(37)和NMOS(38)晶体管的第二反相器级(35,36)并联耦合的第一反相器级(33,34)的CMOS集成电路,所述第二反相器级连接到 其中分压PMOS和NMOS晶体管由延迟输出信号(40)控制,延迟输出信号(40)由耦合到该延迟元件(39)的延迟元件(39)产生, 输出第一个反相器级。 通过使用延迟反馈信号(40)来控制额外的PMOS和NMOS栅极(37,38),根据输入转换是否为高电平,第一反相器级(33,34)的开关点电压被改变, 从低到高还是从低到高。
摘要:
A method and data processing system for accessing an entry in a memory array by placing a tag memory unit (114) in parallel with an operand adder circuit (112) to enable tag lookup and generation of speculative way hit/miss information (126) directly from the operands (111, 113) without using the output sum of the operand adder. PGZ-encoded address bits (0:51) from the operands (111, 113) are applied with a carry-out value (Cout48) to a content-addressable memory array (114) to generate two speculative hit/miss signals. A sum value (EA51) computed from the least significant base and offset address bits determines which of the speculative hit/miss signals is selected for output (126).