公开(公告)号：US5113579A

公开(公告)日：1992-05-19

申请号：US575144

申请日：1990-08-29

Applicant: Raymond DiBugnara

Inventor： Raymond DiBugnara

IPC: H05K1/18 ,  H05K3/34 ,  H05K3/40

CPC classification number: H05K1/184 ,  H05K3/3478 ,  H05K2201/10643 ,  H05K2203/0415 ,  H05K3/3442 ,  H05K3/4046 ,  Y10T29/49144 ,  Y10T29/49155

Abstract: A hybrid integrated circuit apparatus includes an electrical circuit component, having first and second leads connected thereto, disposed within an aperture extending from a first surface to a second surface of a circuit board, the circuit board having on each surface a circuit element bonded adjacent the aperture. A disk of fusible material, sized and positioned to fully extend over the aperture and partially over the circuit element, is melted and reformed in place, under vacuum conditions, so as to mechanically couple the electrical component within the board aperture, provide an electrical contact between the component lead and the circuit element, and hermetically seal the component within the circuit board.

Abstract translation: 一种混合集成电路装置，包括电路部件，其具有连接到其上的第一和第二引线，设置在从电路板的第一表面延伸到第二表面的孔内，所述电路板在每个表面上具有邻近所述电路元件的电路元件 光圈。 尺寸和定位为完全延伸在孔上并部分地在电路元件上方的可熔材料的盘在真空条件下熔化并重新定位，以便在电路板孔内机械耦合电气部件，提供电接触 在组件引线和电路元件之间，并且将电路板内的部件气密地密封。

公开(公告)号：US4039702A

公开(公告)日：1977-08-02

申请号：US540410

申请日：1975-01-13

Applicant: Raymond DiBugnara ,  Richard Allison

Inventor： Raymond DiBugnara ,  Richard Allison

IPC: H01L21/316 ,  H01L21/56 ,  B05D5/12

CPC classification number: H01L21/56 ,  H01L21/316 ,  H01L2924/0002

Abstract: A method for settling suspended glass particles from a slurry containing small amounts of a substance, which substance is preferentially adsorbed to the surface of the suspended glass particles, and which adsorbed substance facilitates centrifugal sedimentation of the glass particles without substantially altering the colloidal nature of the suspension. In particular, a method for forming a glass film on a semiconductive wafer or circuit, especially mesa etched structures, including the step of adding a small amount of hydrogen peroxide to the glass slurry before sedimentation of the glass film.

公开(公告)号：US4243427A

公开(公告)日：1981-01-06

申请号：US853345

申请日：1977-11-21

Applicant: Raymond DiBugnara

Inventor： Raymond DiBugnara

IPC: H01L51/05 ,  C30B31/02 ,  H01L21/22 ,  H01L21/225 ,  H01L21/331 ,  H01L29/73 ,  H01L51/40

CPC classification number: H01L21/2255 ,  H01L21/2225 ,  Y10S252/95

Abstract: A coating composition useful for forming a high concentration phosphoro-silica spin-on dopant is disclosed. The coating composition is formed by the steps of heating a solution of mono-aluminum phosphate, adding a methyl alcohol to the hot solution so as to decrease the viscosity to a predetermined level, permitting the now diluted mono-aluminum phosphate solution to cool and mixing the cooled solution with an alcoholic solution of tetraethylorthosilicate. The present invention is also directed to semiconductor devices coated with the coating composition described hereinabove.

Abstract translation: 公开了一种用于形成高浓度磷硅石旋涂掺杂剂的涂料组合物。 通过以下步骤形成涂料组合物：将磷酸铝一磷酸盐溶液加热至热溶液中，使粘度降至预定水平，使现在稀释的单磷酸铝溶液冷却和混合 冷却的溶液用四乙基原硅酸盐的醇溶液。 本发明还涉及涂覆有上述涂料组合物的半导体器件。

公开(公告)号：US4979076A

公开(公告)日：1990-12-18

申请号：US375033

申请日：1989-06-30

Applicant: Raymond DiBugnara

Inventor： Raymond DiBugnara

IPC: H05K1/18 ,  H05K3/34 ,  H05K3/40

CPC classification number: H05K1/184 ,  H05K3/3478 ,  H05K2201/10643 ,  H05K2203/0415 ,  H05K3/3442 ,  H05K3/4046

Abstract: A hybrid integrated circuit apparatus includes an electrical circuit component, having first and second leads connected thereto, disposed within an aperture extending from a first surface to a second surface of a circuit board, the circuit board having on each surface a circuit element bonded adjacent the aperture. A disk of fusible material, sized and positioned to fully extend over the aperture and partially over the circuit element, is melted and reformed in place, under vacuum conditions, so as to mechanically couple the electrical component within the board aperture, provide an electrical contact between the component lead and the circuit element, and hermetically seal the component within the circuit board.

Abstract translation: 一种混合集成电路装置，包括电路部件，其具有连接到其上的第一和第二引线，设置在从电路板的第一表面延伸到第二表面的孔内，所述电路板在每个表面上具有邻近所述电路元件的电路元件 光圈。 尺寸和定位为完全延伸在孔上并部分地在电路元件上方的可熔材料的盘在真空条件下熔化并重新定位，以便将电气部件机械地联接在板孔内，提供电接触 在组件引线和电路元件之间，并且将电路板内的部件气密地密封。

公开(公告)号：US4190458A

公开(公告)日：1980-02-26

申请号：US890810

申请日：1978-03-27

Applicant: Raymond DiBugnara

Inventor： Raymond DiBugnara

IPC: C30B31/02 ,  H01L21/22 ,  H01L29/167 ,  C09K3/00

CPC classification number: H01L21/2225 ,  C30B31/02 ,  H01L29/167 ,  Y10S252/95

Abstract: An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.

Abstract translation: 公开了一种用于形成在半导体表面上形成金属 - 有机硅酸盐膜的特殊用途的金属 - 二氧化硅涂层溶液的改进方法。 该方法包括以下步骤：形成具有金属盐和溶解于其中的交联剂的第一溶液和溶解有有机硅酸盐的第二溶液的混合物，并将混合物老化预定的时间。 然后可以将该混合物施加到半导体表面，其中进行交联，从而形成活性薄膜。 半导体器件的进一步加热导致形成金属膜，该金属膜又扩散到半导体器件中。 通过使用金属二氧化硅溶液，实现了将金属原子扩散到硅中以进行寿命控制的改进方法。

公开(公告)号：US4126713A

公开(公告)日：1978-11-21

申请号：US741793

申请日：1976-11-15

Applicant: Raymond DiBugnara

Inventor： Raymond DiBugnara

IPC: C30B31/02 ,  H01L21/22 ,  H01L29/167 ,  H01L21/283

CPC classification number: H01L21/2225 ,  C30B31/02 ,  H01L29/167

Abstract: An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.