公开(公告)号：US20170251158A1

公开(公告)日：2017-08-31

申请号：US15463921

申请日：2017-03-20

Applicant: Renesas Electronics Corporation

Inventor： Yasutoshi AIBARA ,  Fumihide MURAO

IPC: H04N5/3745 ,  H04N5/351 ,  H04N5/378

CPC classification number: H04N5/37455 ,  H04N5/351 ,  H04N5/378

Abstract: A CMOS image sensor used as a solid-state image sensing device includes a pixel circuit for outputting a voltage of a level corresponding to the illuminance, and an A/D converter for converting an output voltage of the pixel circuit into a digital signal. The resolution on the low illuminance side is higher than the resolution on the high illuminance side in the A/D converter. Thus, the dynamic range can be increased and the operation speed can be increased, compared to the case in which the resolution is constant independent of the illuminance.

公开(公告)号：US20130162458A1

公开(公告)日：2013-06-27

申请号：US13707198

申请日：2012-12-06

Applicant: Renesas Electronics Corporation

Inventor： Osamu NISHIKIDO ,  Yasutoshi AIBARA ,  Hirokazu SHIMIZU ,  Satoshi TATSUKAWA ,  Takayoshi SHIGEKURA

IPC: H03M1/50

CPC classification number: H04N5/378 ,  H03M1/0863 ,  H03M1/123 ,  H03M1/50 ,  H03M1/56 ,  H04N5/3577 ,  H04N5/374

Abstract: There is a need to provide an AD converter capable of reducing occurrence of a noise. An AD converter includes an operational amplifier and a clip circuit. The operational amplifier receives ramp voltage and voltage for an analog signal and allows output terminal voltage to transition from an H level to an L level when a change in the ramp voltage reaches the voltage for the analog signal. The clip circuit fixes an output terminal of the operational amplifier to clipping voltage after output voltage for the operational amplifier reaches threshold voltage for a latch circuit. Therefore, the AD converter can limit a range of output voltage, as a source of noise, for the operational amplifier and eliminate an unnecessary change in the output voltage after the threshold voltage for the latch circuit is reached.

Abstract translation: 需要提供能够减少噪声发生的AD转换器。 AD转换器包括运算放大器和钳位电路。 当斜坡电压的变化达到模拟信号的电压时，运算放大器接收模拟信号的斜坡电压和电压，并允许输出端电压从H电平转换到L电平。 钳位电路在运算放大器的输出电压达到锁存电路的阈值电压之后，将运算放大器的输出端固定为钳位电压。 因此，AD转换器可以限制作为运算放大器的噪声源的输出电压的范围，并且在达到锁存电路的阈值电压之后消除输出电压的不必要的变化。

公开(公告)号：US20160021323A1

公开(公告)日：2016-01-21

申请号：US14753497

申请日：2015-06-29

Applicant: Renesas Electronics Corporation

Inventor： Yasutoshi AIBARA

IPC: H04N5/378 ,  H04N5/235 ,  H03K4/08 ,  H04N5/374 ,  H04N5/355 ,  H04N5/232 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H03K4/502 ,  H04N5/2355 ,  H04N5/243 ,  H04N5/35527 ,  H04N5/3742

Abstract: Conventional semiconductor devices disadvantageously failed to sufficiently enlarge a dynamic range. A semiconductor device according to an embodiment includes a plurality of registers 21 to 26 that sets a gradient of a ramp signal. In the semiconductor device, the values in the registers 24 to 26 that are reflected in the gradient of the ramp signal are switched at predetermined timings, whereby a ramp signal with a gradient that changes at the predetermined timings is generated, and an analog-to-digital converter uses the ramp signal to convert pixel signals acquired from a pixel area into digital values.

Abstract translation: 传统的半导体器件不利于充分放大动态范围。 根据实施例的半导体器件包括设置斜坡信号的梯度的多个寄存器21至26。 在半导体装置中，在斜坡信号的斜率中反映的寄存器24至26中的值以预定的定时被切换，由此产生具有在预定定时改变的梯度的斜坡信号，并且模拟到 数字转换器使用斜坡信号将从像素区域获取的像素信号转换为数字值。

公开(公告)号：US20150146060A1

公开(公告)日：2015-05-28

申请号：US14541128

申请日：2014-11-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Atsushi SUZUKI ,  Yasutoshi AIBARA

IPC: H04N5/3745

CPC classification number: H04N5/37452 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/3745

Abstract: An imaging device is provided which can secure the dynamic range of a COMS imaging sensor, by storing a charge overflowing from a floating diffusion in a storage capacitance element and suppressing the increase of a pixel area which occurs if the storage capacitance element is formed by a MOS capacitor. The imaging device includes plural pixel circuits arranged in the row direction and the column direction, and plural storage capacitance lines arranged in the row direction and extending in the column direction. Each of the storage capacitance lines is coupled to the pixel circuits arranged in the same column. The pixel circuit includes a first photoelectric conversion element which stores a charge generated by being subjected to light, a floating diffusion to which the charge stored in the first photoelectric conversion element is transferred, and a first switching transistor coupling the floating diffusion and the storage capacitance line.

Abstract translation: 提供了一种成像装置，其可以通过将从浮动扩散溢出的电荷存储在存储电容元件中并且抑制如果存储电容元件由...形成的像素区域的增加，则可以确保COMS成像传感器的动态范围 MOS电容。 成像装置包括沿行方向和列方向布置的多个像素电路，以及沿行方向布置并沿列方向延伸的多个保持电容线。 每个存储电容线耦合到布置在同一列中的像素电路。 像素电路包括存储经受光产生的电荷的第一光电转换元件，转移存储在第一光电转换元件中的电荷的浮动扩散以及耦合浮动扩散和存储电容的第一开关晶体管 线。

公开(公告)号：US20170180669A1

公开(公告)日：2017-06-22

申请号：US15453755

申请日：2017-03-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Atsushi SUZUKI ,  Yasutoshi AIBARA

IPC: H04N5/3745 ,  H04N5/363 ,  H04N5/355

CPC classification number: H04N5/37452 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/3745

Abstract: An imaging device is provided which can secure the dynamic range of a COMS imaging sensor, by storing a charge overflowing from a floating diffusion in a storage capacitance element and suppressing the increase of a pixel area which occurs if the storage capacitance element is formed by a MOS capacitor. The imaging device includes plural pixel circuits arranged in the row direction and the column direction, and plural storage capacitance lines arranged in the row direction and extending in the column direction. Each of the storage capacitance lines is coupled to the pixel circuits arranged in the same column. The pixel circuit includes a first photoelectric conversion element which stores a charge generated by being subjected to light, a floating diffusion to which the charge stored in the first photoelectric conversion element is transferred, and a first switching transistor coupling the floating diffusion and the storage capacitance line.

公开(公告)号：US20170064237A1

公开(公告)日：2017-03-02

申请号：US15186211

申请日：2016-06-17

Applicant: Renesas Electronics Corporation

Inventor： Yasutoshi AIBARA

IPC: H04N5/3745 ,  H04N5/376

CPC classification number: H04N5/2357 ,  G06T2207/20208 ,  H03M1/56 ,  H04N5/35554 ,  H04N5/35581 ,  H04N5/3742 ,  H04N5/37455 ,  H04N5/378

Abstract: A problem in conventional semiconductor devices is that a frame rate for acquiring images cannot be increased. A semiconductor device according to one embodiment sets a slope of a ramp signal provided to an analog-to-digital converter for converting pixel signals into digital values such that it becomes large in a conversion process corresponding to short-time exposure whereas it becomes small in a conversion process corresponding to long-time exposure, sets a sweep time of the ramp signal such that it becomes short in the conversion process corresponding to the short-time exposure, whereas it becomes long in the conversion process corresponding to the long-time exposure, and generates two pieces of data such that the number of bits in a digital value corresponding to the short-time exposure will become smaller than the number of bits in the digital value corresponding to the long-time exposure.

Abstract translation: 常规半导体器件的问题在于，不能增加用于获取图像的帧速率。 根据一个实施例的半导体器件设置提供给模数转换器的斜坡信号的斜率，用于将像素信号转换为数字值，使得其在对应于短时间曝光的转换处理中变大，而其变小 对应于长时间曝光的转换处理，设置斜坡信号的扫描时间，使得其在对应于短时间曝光的转换处理中变短，而在对应于长时间曝光的转换处理中变长 并且产生两条数据，使得与短时间曝光相对应的数字值中的位数将变得小于对应于长时间曝光的数字值中的位数。

公开(公告)号：US20180054584A1

公开(公告)日：2018-02-22

申请号：US15782746

申请日：2017-10-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Atsushi SUZUKI ,  Yasutoshi AIBARA

IPC: H04N5/3745 ,  H04N5/363 ,  H04N5/355

CPC classification number: H04N5/37452 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/3745

Abstract: An imaging device is provided which can secure the dynamic range of a COMS imaging sensor, by storing a charge overflowing from a floating diffusion in a storage capacitance element and suppressing the increase of a pixel area which occurs if the storage capacitance element is formed by a MOS capacitor. The imaging device includes plural pixel circuits arranged in the row direction and the column direction, and plural storage capacitance lines arranged in the row direction and extending in the column direction. Each of the storage capacitance lines is coupled to the pixel circuits arranged in the same column. The pixel circuit includes a first photoelectric conversion element which stores a charge generated by being subjected to light, a floating diffusion to which the charge stored in the first photoelectric conversion element is transferred, and a first switching transistor coupling the floating diffusion and the storage capacitance line.

公开(公告)号：US20170374264A1

公开(公告)日：2017-12-28

申请号：US15698531

申请日：2017-09-07

Applicant: Renesas Electronics Corporation

Inventor： Yasutoshi AIBARA

IPC: H04N5/235 ,  H03M1/56 ,  H04N5/374 ,  H04N5/355 ,  H04N5/378 ,  H04N5/3745

CPC classification number: H04N5/2357 ,  G06T2207/20208 ,  H03M1/56 ,  H04N5/35554 ,  H04N5/35581 ,  H04N5/3742 ,  H04N5/37455 ,  H04N5/378

Abstract: A semiconductor device including a control signal generating circuit that outputs an exposure time switching pulse and a sweep period pulse, the exposure time switching pulse indicating a length of an exposure time in which light-receiving elements receive incident light, and the sweep period pulse specifying a time in which a ramp signal generating circuit sweeps a ramp signal; and a ramp waveform control circuit that stores a short-time exposure slope setting value and a long-time exposure slope setting value, switches between the short-time exposure slope setting value and the long-time exposure slope setting value according to the exposure time switching pulse, and outputs the switched one of the short-time exposure slope setting value and the long-time exposure slope setting value, the short-time exposure slope setting value setting a slope of the ramp signal used when the exposure time switching pulse indicates a short-time exposure period.

公开(公告)号：US20170264847A1

公开(公告)日：2017-09-14

申请号：US15605494

申请日：2017-05-25

Applicant: Renesas Electronics Corporation

Inventor： Yasutoshi AIBARA

IPC: H04N5/378 ,  H04N5/374 ,  H03K4/502 ,  H04N5/235 ,  H04N5/243

CPC classification number: H04N5/378 ,  H03K4/502 ,  H04N5/2355 ,  H04N5/243 ,  H04N5/35527 ,  H04N5/3742

Abstract: Conventional semiconductor devices disadvantageously failed to sufficiently enlarge a dynamic range. A semiconductor device according to an embodiment includes a plurality of registers 21 to 26 that sets a gradient of a ramp signal. In the semiconductor device, the values in the registers 24 to 26 that are reflected in the gradient of the ramp signal are switched at predetermined timings, whereby a ramp signal with a gradient that changes at the predetermined timings is generated, and an analog-to-digital converter uses the ramp signal to convert pixel signals acquired from a pixel area into digital values.

公开(公告)号：US20150109506A1

公开(公告)日：2015-04-23

申请号：US14517807

申请日：2014-10-18

Applicant: Renesas Electronics Corporation

Inventor： Yasutoshi AIBARA ,  Fumihide MURAO

IPC: H04N5/3745 ,  H04N5/351

CPC classification number: H04N5/37455 ,  H04N5/351 ,  H04N5/378

Abstract: A CMOS image sensor used as a solid-state image sensing device includes a pixel circuit for outputting a voltage of a level corresponding to the illuminance, and an A/D converter for converting an output voltage of the pixel circuit into a digital signal. The resolution on the low illuminance side is higher than the resolution on the high illuminance side in the A/D converter. Thus, the dynamic range can be increased and the operation speed can be increased, compared to the case in which the resolution is constant independent of the illuminance.

Abstract translation: 用作固态图像感测装置的CMOS图像传感器包括用于输出与照度相对应的电平的像素电路，以及用于将像素电路的输出电压转换为数字信号的A / D转换器。 低照度侧的分辨率高于A / D转换器的高照度侧的分辨率。 因此，与独立于照度的分辨率恒定的情况相比，可以增加动态范围并且可以提高操作速度。