SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250079389A1

    公开(公告)日:2025-03-06

    申请号:US18799362

    申请日:2024-08-09

    Abstract: In plan view, an electrode pad of a semiconductor chip includes: a first region that contains a center of an exposed portion of the electrode pad; a second region that is located around the first region; and a third region that is located around the first region and that is located between the first region and the second region. Here, a first groove that separates a plurality of semiconductor elements formed in a semiconductor substrate from each other is formed in the semiconductor substrate. The semiconductor substrate includes: a fourth region that overlaps with the third region but not overlaps with each of the first region and the second region, and a fifth region that overlaps with the first region but not overlaps with the third region. And, the first groove is formed in the semiconductor substrate at the fifth region but not at the fourth region.

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