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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250022794A1

    公开(公告)日：2025-01-16

    申请号：US18768246

    申请日：2024-07-10

    Applicant: Renesas Electronics Corporation

    Inventor： Takayuki IGARASHI ,  Yasutaka NAKASHIBA

    IPC: H01L23/522 ,  H01L27/02

    Abstract: A semiconductor device includes a semiconductor substrate, a first coil, a second coil, a third coil, and a fourth coil, an insulating layer, and a first shield. The semiconductor substrate has a device region and a peripheral region. The peripheral region is present around the device region in a plan view. The first coil and the second coil are arranged on the device region and are arranged in a first direction in a plan view. The third coil and the fourth coil are respectively opposed to the first coil and the second coil via the insulating layer. The first shield is arranged between the semiconductor substrate and the first and second coils and overlaps with the first coil and the second coil in a plan view. A width of the first shield in a second direction orthogonal to the first direction is larger than a width of the first coil in the second direction and a width of the second coil in the second direction. The first shield is electrically connected to a reference potential.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240429159A1

    公开(公告)日：2024-12-26

    申请号：US18666149

    申请日：2024-05-16

    Applicant: Renesas Electronics Corporation

    Inventor： Yasutaka NAKASHIBA ,  Takayuki IGARASHI

    IPC: H01L23/522 ,  H01L23/528 ,  H01L27/01

    Abstract: Providing a semiconductor device that can suppress the heat generation in a transformer. The semiconductor device comprises first, second, third and fourth coils, a lead wire, and an insulating layer. The lead wire is formed on the same layer as the first and second coils. The first and second coils are adjacent to each other through the lead wire in a plan view and are electrically connected in series through the lead wire. The insulating layer covers the first and second coils, and the lead wire. The third coil is formed on the first coil so as to face the first coil through the insulating layer. The fourth coil is formed on the second coil so as to face the second coil through the insulating layer. The third and fourth coils are adjacent to each other in a plan view and are electrically connected to each other.

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240038888A1

    公开(公告)日：2024-02-01

    申请号：US18334763

    申请日：2023-06-14

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Makoto KOSHIMIZU ,  Yasutaka NAKASHIBA ,  Tohru KAWAI

    IPC: H01L29/78 ,  H01L27/088 ,  H01L29/06

    CPC classification number: H01L29/7817 ,  H01L27/088 ,  H01L29/0615

    Abstract: A semiconductor substrate includes an n-type substrate region, an n-type first semiconductor region and a second semiconductor region disposed at different positions on the n-type substrate region, an n-type buried layer formed on the n-type first semiconductor region and on the second semiconductor region, a p-type third semiconductor region and a p-type fourth semiconductor region formed on the n-type buried layer and spaced apart from each other, and an n-type fifth semiconductor region that reaches an upper surface of the semiconductor substrate from the n-type buried layer. The n-type buried layer, the n-type first semiconductor region, and the n-type substrate region are present under the p-type third semiconductor region and the n-type fifth semiconductor region. A first transistor is formed in an upper portion of the p-type third semiconductor region, and a second transistor is formed in an upper portion of the p-type fourth semiconductor region.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220376040A1

    公开(公告)日：2022-11-24

    申请号：US17717724

    申请日：2022-04-11

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Makoto KOSHIMIZU ,  Yasutaka NAKASHIBA

    IPC: H01L29/06 ,  H01L29/78

    Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric film formed on the semiconductor substrate, a gate electrode formed on the gate dielectric film, a field plate portion which is integrally formed with the gate electrode, a step insulating film in contact with the field plate portion, a high dielectric constant film in contact with the step insulating film and having a higher dielectric constant than silicon.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210109383A1

    公开(公告)日：2021-04-15

    申请号：US16601280

    申请日：2019-10-14

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Yasutaka NAKASHIBA ,  Tohru KAWAI

    IPC: G02F1/025 ,  G02F1/225 ,  H01L23/48

    Abstract: A semiconductor device includes a first insulating layer, an optical waveguide, a first slab portion, a second insulating layer, and a conductive layer. The optical waveguide is formed on the first insulating layer and has a first side surface and a second side surface. The first slab portion is adjacent to the first side surface. The second insulating layer is formed on the optical waveguide. The conductive layer is formed on the second insulating layer. The optical waveguide has a first conductivity type. The first slab portion has first portion, second portion and third portion. The first portion has a second conductivity type opposite to the first conductivity type. The second portion is located farther from the optical waveguide than the first portion and has a first conductivity type. The third portion is formed between the optical waveguide and the second portion and has the first conductivity type.

    SEMICONDUCTOR MODULE, MANUFACTURING METHOD THEREOF, AND COMMUNICATION METHOD USING THE SAME
    10.
    发明申请
    SEMICONDUCTOR MODULE, MANUFACTURING METHOD THEREOF, AND COMMUNICATION METHOD USING THE SAME 审中-公开

    公开(公告)号：US20190391327A1

    公开(公告)日：2019-12-26

    申请号：US16411993

    申请日：2019-05-14

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Shinichi WATANUKI ,  Yasutaka NAKASHIBA

    IPC: G02B6/12 ,  H01L25/16

    Abstract: The semiconductor device has an optical waveguide formed on a substrate, a first conductor film formed in the same layer as the optical waveguide, an insulating film formed on the first conductor film, a second conductor film formed on the insulating film, and a first interlayer insulating film formed on the substrate so as to cover the optical waveguide and the second conductor film. The semiconductor device includes a first contact hole reaching the first conductor film, a second contact hole reaching the second conductor film, a first contact plug formed in the first contact hole, and a second contact plug formed in the second contact hole. The first conductor film is disposed between the first contact plugs and the board, but the second conductor film is not disposed between the first contact plugs and the board.

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