公开(公告)号：US20070035906A1

公开(公告)日：2007-02-15

申请号：US11503357

申请日：2006-08-10

申请人： Richard Harris ,  Richard Blanchard ,  Francois Hebert

发明人： Richard Harris ,  Richard Blanchard ,  Francois Hebert

IPC分类号： H02H9/06

CPC分类号： H02H9/025

摘要： Improved electrical transient blocking is provided with a transient blocking unit (TBU) having a partial disconnect capability. A TBU is an arrangement of voltage controlled switches that normally conducts, but switches to a disconnected state in response to an above-threshold input transient. Partial disconnection improves the power handling capability of a TBU by preventing thermal damage to the TBU. Partial TBU disconnection can be implemented to keep power dissipation in the TBU below a predetermined level Pmax, thereby avoiding thermal damage to the TBU by keeping the TBU temperature below a temperature limit Tmax. Alternatively, partial TBU disconnection can be implemented to keep TBU temperature below Tmax using direct temperature sensing and feedback.

摘要翻译： 提供了具有部分断开能力的瞬态阻塞单元（TBU）的改进的电气瞬态阻塞。 TBU是通常导通的电压控制开关的布置，但是响应于高于阈值的输入瞬变而切换到断开状态。 部分断开通过防止TBU的热损坏提高了TBU的功率处理能力。 可以实施部分TBU断开以将TBU中的功率消耗降低到预定水平P max以下，从而通过将TBU温度保持在温度下限T max以下来避免对TBU的热损伤， SUB>。 或者，可以使用直接温度感测和反馈来实现部分TBU断开以将TBU温度保持在T 以下。

公开(公告)号：US20060238936A1

公开(公告)日：2006-10-26

申请号：US11410575

申请日：2006-04-24

申请人： Richard Blanchard ,  Richard Harris ,  Francois Hebert

发明人： Richard Blanchard ,  Richard Harris ,  Francois Hebert

IPC分类号： H02H9/00

CPC分类号： H01J1/72 ,  C09K11/59 ,  H01H9/548 ,  H02H9/025

摘要： An apparatus and a method for uni-directional and bi-directional transient blocking. The uni-directional apparatus has a depletion mode n-channel device at its input and a normally closed relay, e.g., a micro-electro-mechanical (MEM) relay, interconnected with the depletion mode n-channel device and the input in such a way that at a predetermined current value the transient causes the normally closed relay to switch into an open state and apply a bias voltage Vn on the depletion mode n-channel device that is sufficiently high to switch it “off” thus block the transient. An analogous arrangement at the output taking advantage of the same or a second relay renders the apparatus bi-directional. The structure of the apparatus and the method of operation ensure a reliable and repeatable trip current Itrip and render the apparatus very robust and feasible for low-cost manufacture.

摘要翻译： 一种用于单向和双向瞬态阻塞的装置和方法。 单向设备在其输入端具有耗尽模式n沟道器件和常闭继电器，例如与耗尽型n沟道器件互连的微机电（MEM）继电器，以及在这种 在预定电流值下，瞬态使常闭继电器切换到打开状态，并在足够高以切换它的耗尽型n沟道器件上施加偏置电压V N“ 关闭“从而阻止瞬态。 利用相同或第二中继器在输出端处的类似布置使设备双向。 该装置的结构和操作方法确保了可靠且可重复的跳闸电流跳闸，并且使得该装置非常坚固且可用于低成本制造。

公开(公告)号：US20070012983A1

公开(公告)日：2007-01-18

申请号：US11487142

申请日：2006-07-14

申请人： Robert Yang ,  Richard Blanchard ,  Francois Hebert

发明人： Robert Yang ,  Richard Blanchard ,  Francois Hebert

IPC分类号： H01L29/94

CPC分类号： H01L29/7803 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

摘要： This invention relates to achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate regions and girds these regions from at least one side and preferably from both or all sides. A series capacitive structure with a biased top element and a number of floating elements is disposed in the insulating trench, and the intermediate region is endowed with a capacitive property that is chosen to establish a capacitive interaction or coupling between the series capacitive structure and the intermediate region so that the breakdown voltage VBD is maximized and on-resistance is minimized. A second series capacitive structure disposed in a second insulating trench can be employed to terminate the device.

摘要翻译： 本发明涉及在半导体器件中实现高击穿电压和低导通电阻，所述半导体器件具有穿过任何这些区域的可控电流路径的顶部区域，中间区域和底部区域。 该装置具有与顶部和中间区域共同延伸的绝缘沟槽，并且从至少一个侧面，优选地从两侧或全部侧面将这些区域线化。 具有偏置顶部元件和多个浮动元件的串联电容结构设置在绝缘沟槽中，并且中间区域具有被选择用于建立串联电容结构和中间体之间的电容性相互作用或耦合的电容性质 区域，使得击穿电压V BAT最大化，导通电阻最小化。 可以采用设置在第二绝缘沟槽中的第二串联电容结构来终止该器件。

公开(公告)号：US20060104004A1

公开(公告)日：2006-05-18

申请号：US11270874

申请日：2005-11-08

申请人： Richard Harris ,  Stephen Coates ,  Francois Hebert

发明人： Richard Harris ,  Stephen Coates ,  Francois Hebert

IPC分类号： H02H1/00

CPC分类号： H02H9/025 ,  H02H5/042 ,  H02H5/044

摘要： An apparatus and method for temperature-dependent transient blocking employing a transient blocking unit (TBU) that uses at least one depletion mode n-channel device interconnected with at least one depletion mode p-channel device. The interconnection is performed such that a transient alters a bias voltage Vp of the p-channel device and a bias voltage Vn of the n-channel device in concert to effectuate their mutual switch off to block the transient. The apparatus has a temperature control unit that is in communication with the TBU and adjusts at least one of the bias voltages Vp, Vn in response to a sensed temperature Ts, thereby enabling the apparatus to also respond to over-temperature. In some embodiments the p-channel device is replaced with a positive temperature coefficient thermistor (PTC). The temperature control unit can use any suitable circuit element, including, among other a PTC, resistor, negative temperature coefficient element, positive temperature coefficient element, transistor, diode.

摘要翻译： 一种采用使用与至少一个耗尽型p沟道器件互连的至少一个耗尽型n沟道器件的瞬态阻塞单元（TBU）的温度依赖性瞬态阻塞的装置和方法。 执行互连，使得瞬态改变p沟道器件的偏置电压V SUB p N和N沟道器件的偏置电压V N n N一致地实现 他们的相互关闭来阻止瞬态。 该装置具有与TBU通信的温度控制单元，并响应于感测到的温度T 1调整至少一个偏置电压V SUB，V SUB， 从而使得设备也能够响应过温。 在一些实施例中，用正温度系数热敏电阻（PTC）代替p沟道器件。 温度控制单元可以使用任何合适的电路元件，包括PTC，电阻器，负温度系数元件，正温度系数元件，晶体管，二极管等。

公开(公告)号：US20060098365A1

公开(公告)日：2006-05-11

申请号：US11271059

申请日：2005-11-09

申请人： Richard Harris ,  Francois Hebert

发明人： Richard Harris ,  Francois Hebert

IPC分类号： H02H9/00

CPC分类号： H02H9/025 ,  H01L27/0266 ,  H01L27/0727 ,  H01L29/808 ,  H02H9/046

摘要： An apparatus and method for high-voltage transient blocking employing a transient blocking unit (TBU) that has at least one depletion mode n-channel device interconnected with at least one depletion mode p-channel device such that a transient alters a bias voltage Vp of the p-channel device and a bias voltage Vn of the n-channel device in concert. Specifically, the bias voltages are altered such that the p-channel device and n-channel device mutually switch off to block the transient. The depletion mode n-channel device employs a set of cascaded low-voltage depletion mode field effect transistors (FETs) such as metal-oxide-silicon field effect transistors (MOSFETs) connected source-to-drain to achieve the desired high-voltage operation of the TBU.

摘要翻译： 一种使用具有与至少一个耗尽型p沟道器件互连的至少一个耗尽型n沟道器件的瞬态阻断单元（TBU）的装置和方法，使得瞬态改变偏置电压V' p沟道器件的SUB> p 和n沟道器件的偏置电压V N n N一致。 具体地，改变偏置电压，使得p沟道器件和n沟道器件相互切断以阻止瞬变。 耗尽型n沟道器件采用一组级联的低压耗尽型场效应晶体管（FET），例如连接源极到漏极的金属氧化物 - 硅场效应晶体管（MOSFET），以实现所需的高电压工作 的TBU。

公开(公告)号：US20060098363A1

公开(公告)日：2006-05-11

申请号：US11130829

申请日：2005-05-17

申请人： Francois Hebert ,  Richard Harris

发明人： Francois Hebert ,  Richard Harris

IPC分类号： H02H9/00

CPC分类号： H01L27/0266 ,  H01L27/0727 ,  H02H9/025 ,  H02H9/046

摘要： A transient blocking unit (TBU) with integrated over-current protection and discrete over-voltage protection. In one example embodiment, the present innovations are embodied as a unit for protecting a circuit from high voltage and high current, comprising a core transient blocking unit with at least one high voltage device wherein the core transient blocking unit is integrated, and wherein the at least one high voltage device is discrete.

摘要翻译： 具有集成过流保护和离散过电压保护的瞬态阻断单元（TBU）。 在一个示例性实施例中，本发明被实施为用于保护电路免受高电压和高电流的单元，其包括具有至少一个高压器件的核心瞬态阻塞单元，其中所述核心瞬态阻塞单元被集成，并且其中， 至少一个高压装置是离散的。

公开(公告)号：US20060158812A1

公开(公告)日：2006-07-20

申请号：US11331836

申请日：2006-01-12

申请人： Richard Harris ,  Francois Hebert

发明人： Richard Harris ,  Francois Hebert

IPC分类号： H02H3/22

CPC分类号： H02H9/025 ,  H01L27/0266 ,  H02H9/04

摘要： A transient blocking unit (TBU) having improved damage resistance is provided. A TBU includes two or more depletion mode transistors arranged to provide a low series impedance in normal operation and a high series impedance when the input current exceeds a predetermined threshold. At least one of the TBU transistors is a protecting device having a shunt circuit element connected in parallel with its channel. When the TBU is in its high impedance state, the shunt circuit element provides a current path, thereby decreasing terminal voltages on at least one of the TBU transistors. The shunt element can be a discrete or integrated resistor, a current source including a transistor, or an appropriately engineered device parasitic.

摘要翻译： 提供了具有改善的耐损伤性的瞬态阻断单元（TBU）。 TBU包括两个或多个耗尽型晶体管，其布置成在正常操作中提供低串联阻抗，并且当输入电流超过预定阈值时包括高串联阻抗。 TBU晶体管中的至少一个是具有与其沟道并联连接的分流电路元件的保护器件。 当TBU处于高阻抗状态时，分流电路元件提供电流路径，从而减小至少一个TBU晶体管的端电压。 分路元件可以是分立或集成的电阻器，包括晶体管的电流源或者适当设计的器件寄生的。

公开(公告)号：US20060098364A1

公开(公告)日：2006-05-11

申请号：US11270062

申请日：2005-11-08

申请人： Richard Harris ,  Francois Hebert

发明人： Richard Harris ,  Francois Hebert

IPC分类号： H02H9/00

CPC分类号： H01L27/0266 ,  H02H5/042 ,  H02H5/044 ,  H02H9/025 ,  H02H9/046

摘要： An apparatus and method for enhanced transient blocking employing a transient blocking unit (TBU) that uses at least one depletion mode n-channel device interconnected with at least one depletion mode p-channel device. The interconnection is performed such that a transient alters a bias voltage Vp of the p-channel device and a bias voltage Vn of the n-channel device such that the p- and n-channel devices mutually switch off to block the transient. The apparatus has an enhancer circuit for applying an enhancement bias to a gate terminal of at least one of the depletion mode n-channel devices of the TBU to reduce a total resistance Rtot of the apparatus. Alternatively, the apparatus has an enhancement mode NMOS transistor and a TBU connected thereto to help provide an enhancement bias to a gate terminal of the enhancement mode NMOS.

摘要翻译： 一种用于增强瞬态阻塞的装置和方法，其采用使用与至少一个耗尽型p沟道器件互连的至少一个耗尽型n沟道器件的瞬态阻塞单元（TBU）。 执行互连，使得瞬态改变p沟道器件的偏置电压V P和N沟道器件的偏置电压V N n N，使得p - 和n通道设备相互关闭以阻止瞬态。 该装置具有增强器电路，用于向TBU中的至少一个耗尽型n沟道器件的栅极端子施加增强偏置，以减小器件的总电阻R tht。 或者，该装置具有增强型NMOS晶体管和与其连接的TBU，以帮助向增强型NMOS的栅极端提供增强偏置。

公开(公告)号：US20060098373A1

公开(公告)日：2006-05-11

申请号：US11130793

申请日：2005-05-17

申请人： Francois Hebert ,  Richard Harris

发明人： Francois Hebert ,  Richard Harris

IPC分类号： H02H9/06

CPC分类号： H01L27/0266 ,  H01L21/823462 ,  H01L27/088 ,  H02H9/025 ,  H02H9/046

摘要： A TBU system that includes a TBU combined with control and monitoring features. For example, in one embodiment, TBU elements are combined with a status indication switch or indicator. In another embodiment, TBU elements are combined with event logging for over voltage conditions, over current conditions, including an indication of when the event occurred and an amount of energy that was let through.

摘要翻译： 一个TBU系统，包括TBU与控制和监控功能相结合。 例如，在一个实施例中，TBU元件与状态指示开关或指示器组合。 在另一个实施例中，TBU元件与过电压条件的事件记录相结合，包括当前状况的发生以及通过的能量的指示。

公开(公告)号：US09257525B2

公开(公告)日：2016-02-09

申请号：US13283139

申请日：2011-10-27

申请人： I-Shan Sun ,  Rick Carlton Jerome ,  Francois Hebert

发明人： I-Shan Sun ,  Rick Carlton Jerome ,  Francois Hebert

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L23/48 ,  H01L23/535 ,  H01L21/74 ,  H01L27/06

CPC分类号： H01L29/66204 ,  H01L21/743 ,  H01L23/481 ,  H01L23/535 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for through active-silicon via integration is provided. The method comprises forming an electrical device in a handle wafer. The method also comprises forming an isolation layer over the handle wafer and the electrical device and joining an active layer to the isolation layer. Further, the method comprises forming at least one trench through the active layer and the isolation layer to expose a portion of the handle wafer and depositing an electrically conductive material in the at least one trench, the electrically conductive material providing an electrical connection to the electrical device through the active layer.

摘要翻译： 提供了一种通过积分硅通过集成的方法。 该方法包括在处理晶片中形成电气装置。 该方法还包括在手柄晶片和电气装置上形成隔离层，并将活性层连接到隔离层。 此外，该方法包括通过有源层和隔离层形成至少一个沟槽，以暴露处理晶片的一部分并在至少一个沟槽中沉积导电材料，导电材料提供与电 设备通过活动层。