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公开(公告)号：US5186912A
公开(公告)日：1993-02-16
申请号：US637054
申请日：1991-01-03
IPC分类号： A47L15/44
CPC分类号： A47L15/4445 , Y10T137/4891
摘要： A dispenser (10) and method for washing dishes and utensils in a dishwashing machine are disclosed. The dispenser (10) is comprised of a container (11) and lid (12), the dispenser containing a solid detergent composition (13). A slot (23) in a side wall (17) and baffle (26) allow for controlled drainage of the detergent solution. The lid (12) has a plurality of openings (18) through which water from the dishwashing machine enters, so as to dissolve the solid detergent (13). The dispenser (10) is positioned within the washing chamber (20) of a dishwashing machine (19).
摘要翻译： 公开了一种分配器（10）以及洗碗机中的餐具清洗方法。 分配器（10）由容器（11）和盖（12）组成，分配器包含固体洗涤剂组合物（13）。 在侧壁（17）和挡板（26）中的槽（23）允许洗涤剂溶液的受控排水。 盖（12）具有多个开口（18），来自洗碗机的水进入其中，从而溶解固体洗涤剂（13）。 分配器（10）位于洗碗机（19）的洗涤室（20）内。
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2.发明申请INDOLE COMPOUND, AND PHOTOELECTRIC CONVERSION DYE USING SAME, SEMICONDUCTOR ELECTRODE, PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTROCHEMICAL CELL 审中-公开吲哚化合物，使用它们的光电转换染料，半导体电极，光电转换元件和光电化学电池公开(公告)号：US20130167932A1
公开(公告)日：2013-07-04
申请号：US13822577
申请日：2011-11-07
CPC分类号： C09B57/00 , C07D409/04 , C07D409/14 , C07D495/04 , C09B23/105 , H01G9/2059 , H01L51/0064 , H01M14/005 , Y02E10/542
摘要： Provided is an indole compound represented by the following general formula (1): wherein in formula (1), R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group; R3 to R6 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, an alkoxy group or a hydroxy group; X represents an organic group having an acidic group; and Z represents a linking group including at least one selected from the group consisting of a substituted or unsubstituted aromatic ring, a substituted or unsubstituted heterocyclic ring, a vinylene group and an ethynylene group.
摘要翻译： 提供由以下通式（1）表示的吲哚化合物：其中在式（1）中，R 1和R 2各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳基或取代或未取代的 杂环基; R 3〜R 6各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳基，烷氧基或羟基。 X表示具有酸性基团的有机基团; Z表示包括选自取代或未取代的芳环，取代或未取代的杂环，亚乙烯基和亚乙炔基中的至少一种的连接基团。
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公开(公告)号：US20130008510A1
公开(公告)日：2013-01-10
申请号：US13636609
申请日：2011-03-22
CPC分类号： H01G9/2004 , H01G9/2018 , H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： An object of the present invention is to provide a photoelectric conversion element having excellent photoelectric conversion efficiency and durability. To achieve the object, the present invention provides a photoelectric conversion element including a semiconductor electrode (70) that has a porous semiconductor layer (30) onto which a dye (40) is adsorbed, a counter electrode (60) that is provided so as to face the semiconductor layer (30) of the semiconductor electrode (70), and an electrolyte (50) that contains a radical compound having an average molecular weight of 200 or more and is positioned between the semiconductor electrode (70) and the counter electrode (60).
摘要翻译： 本发明的目的是提供一种具有优异的光电转换效率和耐久性的光电转换元件。 为了实现该目的，本发明提供了一种光电转换元件，其包括：半导体电极（70），其具有吸附有染料（40）的多孔半导体层（30）;反电极（60），其设置为 面向半导体电极（70）的半导体层（30），以及含有平均分子量为200以上且位于半导体电极（70）和对置电极之间的自由基化合物的电解质（50） （60）。
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公开(公告)号：US20060124051A1
公开(公告)日：2006-06-15
申请号：US11239214
申请日：2005-09-30
申请人： Kenji Yoshioka , Hiroshi Yoneyama , Katsumi Maeda , Ikuo Niikura , Mitsuru Sato , Masumi Ito
发明人： Kenji Yoshioka , Hiroshi Yoneyama , Katsumi Maeda , Ikuo Niikura , Mitsuru Sato , Masumi Ito
摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.
摘要翻译： 本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。 本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。
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5.发明授权Fluorine-containing phenylmaleimide derivative, polymer, chemically amplified resist composition, and method for pattern formation using the composition 失效含氟苯基马来酰亚胺衍生物，聚合物，化学放大抗蚀剂组合物，以及使用该组合物的图案形成方法公开(公告)号：US06746722B2
公开(公告)日：2004-06-08
申请号：US10198958
申请日：2002-07-22
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： C08J704
CPC分类号： C08F222/22 , C08F222/18 , Y10S522/914
摘要： A fluorine-containing phenylmaleimide derivative having a specific structure. A polymer obtained by polymerizing monomers containing the derivative. A polymer containing a specific structural unit and having a weight-average molecular weight of 2,000 to 200,000. A chemically amplified resist composition containing the polymer and a photo acid generator, wherein the proportion of the polymer relative to the total of the polymer and the photo acid generator is 70 to 99.8% by mass. A method for pattern formation, which comprises coating the above composition on a to-be-processed substrate, exposing with a light of 180 nm or less wavelength, and conducting baking and development.
摘要翻译： 具有特定结构的含氟苯基马来酰亚胺衍生物。 通过聚合含有该衍生物的单体获得的聚合物。 含有特定结构单元且重均分子量为2,000〜200,000的聚合物。 一种含有聚合物和光酸发生剂的化学放大抗蚀剂组合物，其中聚合物相对于聚合物和光酸产生剂的总量的比例为70〜99.8质量％。 一种图案形成方法，其包括将上述组合物涂布在待处理衬底上，用180nm或更小波长的光进行曝光，并进行烘烤和显影。
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6.发明授权Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer 失效化学放大抗蚀剂，化学放大抗蚀剂聚合物，聚合物单体和将图案转移到化学增强抗蚀剂层的方法公开(公告)号：US06710188B2
公开(公告)日：2004-03-23
申请号：US10463571
申请日：2003-06-18
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： C07D31304
CPC分类号： G03F7/0395 , C07D309/30 , C08F20/30 , C08F34/02 , G03F7/0397
摘要： Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.
摘要翻译： 基于由通式（1）表示的3-氧代-4-氧杂双环[3.2.1]辛烷-2-基的乙烯基聚合物制备化学扩增抗蚀剂，其中L 1，L 2， L 3，L 4，L 5和L 6选自氢原子和碳原子数1〜8的烷基，氢原子和/或烷基 在L 5和L 6被碳原子数为1〜10的亚烷基取代，并且彼此键合形成环，使得抗蚀剂对波长等于或小于220nm的光具有高透明度， 抗干蚀刻性能好，对基片粘合性好。
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公开(公告)号：US06352813B2
公开(公告)日：2002-03-05
申请号：US09102916
申请日：1998-06-23
IPC分类号： G03F7032
CPC分类号： G03F7/0382
摘要： A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0
摘要翻译： 本发明的感光性树脂组合物具有（a）具有由通式（1）表示的重复单元的聚合物：其中R1，R3和R5各自表示氢原子或甲基，R2表示桥连环状 碳数为7〜22的烃基，R4表示包含环氧基的烃基，x + y + z = 1，其中0
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8.发明授权
公开(公告)号：US6140010A
公开(公告)日：2000-10-31
申请号：US140650
申请日：1998-08-26
IPC分类号： G03F7/004 , G03F7/033 , G03F7/038 , H01L21/027
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, ##STR1## where in the general chemical formula (1), R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group. Also, the general chemical formula (2) is as follows, ##STR2## In the general chemical formula (2), X is a group expressed by a general chemical formula (3), a hydrogen atom, a hydrocarbon group containing carbon atoms in a range of 1 to 6, an alkoxy group containing carbon atoms in a range of 1 to 3, or a hydroxyl group, a1, a2 and a3 are 1 or 2, respectively, b1, b2 and b3 are 0 or 1, respectively, and a1+b1=2, a2+b2=2, and a3+b3=2, and R.sup.8 is a hydrogen atom, or an alkyl group containing carbon atoms in a range of 1 to 6. ##STR3##
摘要翻译： 负型光致抗蚀剂组合物包括含有由通式（1）表示的重复单元，重均分子量为1000〜500000的聚合物，由含有官能团的化合物构成的交联剂 其由一般化学式（2）表示，光生酸剂响应于光而产生酸。 一般化学式（1）如下，其中在通式（1）中，R 1为氢原子或甲基，R 2为碳原子数为7〜18的亚烷基，桥连 环状烃基。 另外，通式（2）中，通式（2）中，X为通式（3）表示的基团，氢原子，碳原子数为 1〜6中，碳原子数1〜3的烷氧基或羟基a1，a2，a3分别为1或2，b1，b2和b3分别为0或1，a1 + b1 = 2，a2 + b2 = 2，a3 + b3 = 2，R8为氢原子或碳原子数为1〜6的烷基。
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9.发明授权
公开(公告)号：US6106998A
公开(公告)日：2000-08-22
申请号：US94021
申请日：1998-06-09
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.
摘要翻译： 适合用于曝光波长为220nm以下的光束的负光刻胶材料。 负抗蚀剂材料含有重均分子量为1,000〜500,000的聚合物，由下式（1）表示：其中R1，R3和R5是氢原子或甲基; R2是指定的二价烃基; R4是具有环氧基的烃基; R6是氢原子或C1-12烃基; 并且x，y和z分别表示满足一定关系的任意数; 通过曝光产生酸的光酸发生剂; 和任选的多元醇或多官能环氧基。 本发明还公开了一种图案形成方法以及使用图案形成方法制造半导体器件的方法。
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10.发明授权
公开(公告)号：US5585507A
公开(公告)日：1996-12-17
申请号：US478969
申请日：1995-06-07
IPC分类号： C07C381/12 , G03F7/004 , C07F5/02 , C07F9/66 , C07F9/90
CPC分类号： G03F7/0045 , C07C381/12 , C07C2101/08 , C07C2101/14 , C07C2103/74 , Y10S430/111 , Y10S430/122
摘要： A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## Wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
摘要翻译： 含有由以下通式（I）表示的烷基锍盐化合物的光致抗蚀剂组合物：其中R1和R2可以相同或不同，各自为直链，支链或环状的C1至C8烷基，R3 是直链，支链或环状的C1至C8烷基，C5至C72-氧代环烷基，或直链或支链C3至C82-氧代烷基，Y-表示抗衡离子。 光致抗蚀剂组合物对深紫外线具有高透明度。 具有220nm或更小波长的光并能够形成具有高灵敏度的良好精细图案，因此可用作暴露于深紫外线的化学放大型抗蚀剂。 来自ArF准分子激光的光。
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