公开(公告)号：US20060124051A1

公开(公告)日：2006-06-15

申请号：US11239214

申请日：2005-09-30

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/10 ,  C30B7/00 ,  C30B29/16

摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.

摘要翻译： 本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。 本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。

公开(公告)号：US20080056984A1

公开(公告)日：2008-03-06

申请号：US11576408

申请日：2005-09-21

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito ,  Fumio Orito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito ,  Fumio Orito

IPC分类号： C30B29/16 ,  C30B7/10

CPC分类号： C30B29/16 ,  C30B7/10

摘要： Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.

摘要翻译： 提供具有六方纤锌矿结构的单晶，其可用作各种装置的基板，并且具有高纯度并且均匀。 通过在柱状晶种的至少m面上由AX（表示正电荷的元素和表示电负性元素的X）表示的晶体生长获得的具有六方纤锌矿结构的单晶的特征在​​于， 在正电性元素A以外的金属浓度为0.1〜50ppm的浓度为100％以下。

公开(公告)号：US07438762B2

公开(公告)日：2008-10-21

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： C30B25/12

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶制成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US07829207B2

公开(公告)日：2010-11-09

申请号：US12239739

申请日：2008-09-27

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： B32B9/00 ,  B32B19/00 ,  C30B29/16 ,  C30B29/46

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20090045398A1

公开(公告)日：2009-02-19

申请号：US12239739

申请日：2008-09-27

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： H01L21/34 ,  H01L29/22

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20070152233A1

公开(公告)日：2007-07-05

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

IPC分类号： H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20130167932A1

公开(公告)日：2013-07-04

申请号：US13822577

申请日：2011-11-07

申请人： Katsumi Maeda ,  Shin Nakamura ,  Kentaro Nakahara ,  Terumasa Shimoyama

发明人： Katsumi Maeda ,  Shin Nakamura ,  Kentaro Nakahara ,  Terumasa Shimoyama

IPC分类号： C09B57/00 ,  H01G9/20

CPC分类号： C09B57/00 ,  C07D409/04 ,  C07D409/14 ,  C07D495/04 ,  C09B23/105 ,  H01G9/2059 ,  H01L51/0064 ,  H01M14/005 ,  Y02E10/542

摘要： Provided is an indole compound represented by the following general formula (1): wherein in formula (1), R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group; R3 to R6 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, an alkoxy group or a hydroxy group; X represents an organic group having an acidic group; and Z represents a linking group including at least one selected from the group consisting of a substituted or unsubstituted aromatic ring, a substituted or unsubstituted heterocyclic ring, a vinylene group and an ethynylene group.

摘要翻译： 提供由以下通式（1）表示的吲哚化合物：其中在式（1）中，R 1和R 2各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳基或取代或未取代的 杂环基; R 3〜R 6各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳基，烷氧基或羟基。 X表示具有酸性基团的有机基团; Z表示包括选自取代或未取代的芳环，取代或未取代的杂环，亚乙烯基和亚乙炔基中的至少一种的连接基团。

公开(公告)号：US20130008510A1

公开(公告)日：2013-01-10

申请号：US13636609

申请日：2011-03-22

申请人： Shin Nakamura ,  Katsumi Maeda ,  Kentaro Nakahara ,  Masahiro Suguro

发明人： Shin Nakamura ,  Katsumi Maeda ,  Kentaro Nakahara ,  Masahiro Suguro

IPC分类号： H01L51/44 ,  H01L51/46

CPC分类号： H01G9/2004 ,  H01G9/2018 ,  H01G9/2031 ,  H01G9/2059 ,  Y02E10/542

摘要： An object of the present invention is to provide a photoelectric conversion element having excellent photoelectric conversion efficiency and durability. To achieve the object, the present invention provides a photoelectric conversion element including a semiconductor electrode (70) that has a porous semiconductor layer (30) onto which a dye (40) is adsorbed, a counter electrode (60) that is provided so as to face the semiconductor layer (30) of the semiconductor electrode (70), and an electrolyte (50) that contains a radical compound having an average molecular weight of 200 or more and is positioned between the semiconductor electrode (70) and the counter electrode (60).

摘要翻译： 本发明的目的是提供一种具有优异的光电转换效率和耐久性的光电转换元件。 为了实现该目的，本发明提供了一种光电转换元件，其包括：半导体电极（70），其具有吸附有染料（40）的多孔半导体层（30）;反电极（60），其设置为 面向半导体电极（70）的半导体层（30），以及含有平均分子量为200以上且位于半导体电极（70）和对置电极之间的自由基化合物的电解质（50） （60）。

公开(公告)号：US06746722B2

公开(公告)日：2004-06-08

申请号：US10198958

申请日：2002-07-22

申请人： Katsumi Maeda ,  Kaichiro Nakano

发明人： Katsumi Maeda ,  Kaichiro Nakano

IPC分类号： C08J704

CPC分类号： C08F222/22 ,  C08F222/18 ,  Y10S522/914

摘要： A fluorine-containing phenylmaleimide derivative having a specific structure. A polymer obtained by polymerizing monomers containing the derivative. A polymer containing a specific structural unit and having a weight-average molecular weight of 2,000 to 200,000. A chemically amplified resist composition containing the polymer and a photo acid generator, wherein the proportion of the polymer relative to the total of the polymer and the photo acid generator is 70 to 99.8% by mass. A method for pattern formation, which comprises coating the above composition on a to-be-processed substrate, exposing with a light of 180 nm or less wavelength, and conducting baking and development.

摘要翻译： 具有特定结构的含氟苯基马来酰亚胺衍生物。 通过聚合含有该衍生物的单体获得的聚合物。 含有特定结构单元且重均分子量为2,000〜200,000的聚合物。 一种含有聚合物和光酸发生剂的化学放大抗蚀剂组合物，其中聚合物相对于聚合物和光酸产生剂的总量的比例为70〜99.8质量％。 一种图案形成方法，其包括将上述组合物涂布在待处理衬底上，用180nm或更小波长的光进行曝光，并进行烘烤和显影。

公开(公告)号：US06710188B2

公开(公告)日：2004-03-23

申请号：US10463571

申请日：2003-06-18

申请人： Katsumi Maeda ,  Kaichiro Nakano

发明人： Katsumi Maeda ,  Kaichiro Nakano

IPC分类号： C07D31304

CPC分类号： G03F7/0395 ,  C07D309/30 ,  C08F20/30 ,  C08F34/02 ,  G03F7/0397

摘要： Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

摘要翻译： 基于由通式（1）表示的3-氧代-4-氧杂双环[3.2.1]辛烷-2-基的乙烯基聚合物制备化学扩增抗蚀剂，其中L 1，L 2， L 3，L 4，L 5和L 6选自氢原子和碳原子数1〜8的烷基，氢原子和/或烷基 在L 5和L 6被碳原子数为1〜10的亚烷基取代，并且彼此键合形成环，使得抗蚀剂对波长等于或小于220nm的光具有高透明度， 抗干蚀刻性能好，对基片粘合性好。