摘要:
A fluorine-containing phenylmaleimide derivative having a specific structure. A polymer obtained by polymerizing monomers containing the derivative. A polymer containing a specific structural unit and having a weight-average molecular weight of 2,000 to 200,000. A chemically amplified resist composition containing the polymer and a photo acid generator, wherein the proportion of the polymer relative to the total of the polymer and the photo acid generator is 70 to 99.8% by mass. A method for pattern formation, which comprises coating the above composition on a to-be-processed substrate, exposing with a light of 180 nm or less wavelength, and conducting baking and development.
摘要:
Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.
摘要:
A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0
摘要翻译:本发明的感光性树脂组合物具有(a)具有由通式(1)表示的重复单元的聚合物:其中R1,R3和R5各自表示氢原子或甲基,R2表示桥连环状 碳数为7〜22的烃基,R4表示包含环氧基的烃基,x + y + z = 1,其中0
摘要:
A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, ##STR1## where in the general chemical formula (1), R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group. Also, the general chemical formula (2) is as follows, ##STR2## In the general chemical formula (2), X is a group expressed by a general chemical formula (3), a hydrogen atom, a hydrocarbon group containing carbon atoms in a range of 1 to 6, an alkoxy group containing carbon atoms in a range of 1 to 3, or a hydroxyl group, a1, a2 and a3 are 1 or 2, respectively, b1, b2 and b3 are 0 or 1, respectively, and a1+b1=2, a2+b2=2, and a3+b3=2, and R.sup.8 is a hydrogen atom, or an alkyl group containing carbon atoms in a range of 1 to 6. ##STR3##
摘要:
A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.
摘要:
A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## Wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
摘要:
A noble alicyclic unsaturated compound represented by the general formula (1): wherein at least one of R1 and R2 is a fluorine atom or a fluorinated alkyl group; a polymer formed by the polymerization of a polymer precursor comprising the alicyclic compound. The polymer is useful, in the lithography using a light having a wavelength of 190 nm or less, as a chemically amplified resist which exhibits excellent transparency with respect to the light for use in exposure and also is excellent in the adhesion to a substrate and the resistance to dry etching.
摘要:
There is provided a chemically-amplified resist composition having high transparency to light having a wavelength of 220 nanometers or smaller, excellent resistance to etching, and excellent adhesion to a substrate. The chemically-amplified resist composition is prepared through the use of at least one of a repeated structural unit having a bridged alicyclic γ-lactone structure defined in the general formula (III), a repeated structural unit having a bridged alicyclic γ-lactone structure defined in the general formula (IV), and a repeated structural unit having a bridged alicyclic γ-lactone structure defined in the general formula (V).
摘要:
The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed. (wherein Z is an alicyclic hydrocarbon group having a lactone structure).
摘要:
As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R1 and R2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.
摘要翻译:作为适用于化学放大型抗蚀剂中使用的抗蚀剂树脂的聚合物,其可应用于使用180nm以下的曝光光的光刻法,作为聚合物,其具有提高的透明性,提供了包含由单体聚合得到的重复单元的聚合物 表现出聚合活性,其中所述单体具有由通式(1)表示的含氟缩醛或缩酮结构:其中R表示含有表现出聚合活性的碳 - 碳双键的原子团; R 1和R 2中的至少一个是具有1至20个碳原子的氟化烷基或氟化芳基; R 3表示选自氢原子,烷基,烷氧基取代的烷基,氟化烷基,芳基,氟化芳基,芳烷基和含氟芳烷基的基团 至20个碳原子。