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1.发明授权Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer 有权具有全分辨率顶层和低分辨率下层的垂直滤色器传感器组阵列公开(公告)号：US07339216B1
公开(公告)日：2008-03-04
申请号：US11285470
申请日：2005-11-22
IPC分类号： H01L31/00
CPC分类号： H01L27/14647 , H01L27/14641 , H04N9/045
摘要： An array of vertical color filter (VCF) sensor groups, optionally including or coupled to circuitry for converting photogenerated carriers produced in the sensors to electrical signals, and methods for reading out any embodiment of the array. The array has a top layer (including the top sensors of the sensor group) and at least one low layer including other ones of the sensors. Only the top layer can be read out with full resolution. Each low layer can only be read out with less than full resolution to generate fewer sensor output values than the total number of pixel sensor locations. Typically, the sensor groups are arranged in cells, each cell including a S sensor groups (e.g., S=4), with S sensors in the top layer and fewer than S sensors in each low layer of the cell. Typically, each cell includes at least one shared sensor (a sensor shared by two or more VCF sensor groups) in each low layer, and each cell includes sensor selection switches (e.g., transistors) between the cell's sensors and a sense node.
摘要翻译： 垂直滤色器（VCF）传感器组的阵列，可选地包括或耦合到用于将在传感器中产生的光生载流子转换为电信号的电路，以及用于读出阵列的任何实施例的方法。 该阵列具有顶层（包括传感器组的顶部传感器）和至少一个低层，包括其他传感器。 只有顶层才能以全分辨率读出。 每个低层只能以少于全分辨率读出，以产生比像素传感器位置总数少的传感器输出值。 通常，传感器组被布置在单元中，每个单元包括S个传感器组（例如，S = 4），S个传感器在顶层中，并且小于单元的每个低层中的S个传感器。 通常，每个小区包括在每个低层中的至少一个共享传感器（由两个或更多个VCF传感器组共享的传感器），并且每个小区包括小区的传感器和感测节点之间的传感器选择开关（例如，晶体管）。
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2.发明授权Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group 有权具有不同尺寸的载体收集元件的垂直滤色器传感器组以及用于制造这种传感器组的方法公开(公告)号：US07166880B2
公开(公告)日：2007-01-23
申请号：US10975093
申请日：2004-10-27
IPC分类号： H01L31/06
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14647 , H01L27/14687 , H01L31/02162 , H01L31/107
摘要： A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least one sensor of the group has substantially larger area, projected in a plane perpendicular to a normal axis defined by a top surface of a top sensor of the group, than does each minimum-sized carrier-collection element of the group. In some embodiments, the array includes at least two sensor groups that share at least one carrier-collection element. Optionally, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor of the group.
摘要翻译： 形成在基板（优选半导体基板）上并且包括至少两个垂直堆叠的光敏传感器和这种传感器组的阵列的垂直滤色器传感器组。 在一些实施例中，该组的至少一个传感器的载体收集元件具有基本上更大的面积，投影在垂直于由组的顶部传感器的顶表面限定的法线轴的平面内，而不是每个最小尺寸 集团的载体收集要素。 在一些实施例中，阵列包括共享至少一个载体收集元件的至少两个传感器组。 可选地，传感器组包括相对于传感器定位的至少一个过滤器，使得已经传播通过过滤器或从过滤器反射的辐射将传播到该组的至少一个传感器中。
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3.发明授权公开(公告)号：US06882367B1
公开(公告)日：2005-04-19
申请号：US09515807
申请日：2000-02-29
IPC分类号： H04N5/351 , H04N5/3745 , H04N5/335 , H01L27/00
CPC分类号： H04N5/351 , H04N5/2351 , H04N5/3745
摘要： A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.
摘要翻译： 设置在半导体衬底上的存储像素传感器包括具有耦合到第一电位的第一端子和第二端子的光电二极管。 阻挡晶体管具有耦合到光电二极管的第二端子的第一端子，耦合到栅极设置电压的第二端子和控制栅极。 复位晶体管具有耦合到势垒晶体管的第二端子的第一端子，耦合到反向偏置光电二极管的复位参考电位的第二端子，以及耦合到RESET信号源的控制栅极。 光电荷积分节点耦合到所述阻挡晶体管的所述第二端子。 光电荷积分节点包括第一源极 - 跟随器晶体管的控制栅极。 第一源极跟随器晶体管耦合到偏置电流源并具有输出。 电容存储节点耦合到第一源跟随器晶体管的输出，并且包括具有输出的第二源极 - 跟随器晶体管的控制栅极。 曝光晶体管耦合在第一源极 - 跟随器晶体管的输出端和总计电流求和节点之间，并具有耦合到饱和电平电压的控制栅极。
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4.发明授权Exposure control in electronic cameras by detecting overflow from active pixels 有权通过检测有源像素的溢出来在电子照相机中进行曝光控制公开(公告)号：US06833871B1
公开(公告)日：2004-12-21
申请号：US09872070
申请日：2001-07-16
IPC分类号： H04N314
CPC分类号： H04N5/353 , H04N5/35572 , H04N5/3559 , H04N5/3594 , H04N5/361 , H04N5/37452
摘要： A method for controlling the exposure of an active pixel array electronic still camera includes the steps of: integrating photocurrent in each pixel during an integration time period; collecting overflow charge from all pixels in the array during the integration time period; developing an overflow signal as a function of the overflow charge; and terminating the integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level. Apparatus for performing the method of the present invention includes circuitry for integrating photocurrent in each pixel during a integration time period; circuitry for diverting and detecting overflow charge from all pixels in the array during the integration time period; circuitry for developing an overflow signal as a function of the overflow charge; and circuitry for terminating said integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level.
摘要翻译： 一种用于控制有源像素阵列电子静态照相机的曝光的方法包括以下步骤：在积分时间段内对每个像素中的光电流进行积分; 在积分时间段期间从阵列中的所有像素收集溢出电荷; 产生作为溢流电荷的函数的溢出信号; 并且当溢出信号超过所选择的预设阈值水平以表示期望的参考曝光水平时终止积分时间段。 用于执行本发明的方法的装置包括用于在积分时间段期间在每个像素中积分光电流的电路; 用于在积分时间段期间转移和检测阵列中所有像素的溢出电荷的电路; 作为溢出电荷的函数产生溢出信号的电路; 以及用于当溢出信号超过被选择以表示期望的参考曝光水平的预设阈值电平时终止所述积分时间段的电路。
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5.发明授权Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications 有权适用于电子静物照相机应用的像素内像素帧存储元件，阵列和电子快门方法公开(公告)号：US06741283B1
公开(公告)日：2004-05-25
申请号：US09724393
申请日：2000-11-28
IPC分类号： H04N314
CPC分类号： H04N5/353 , H01L27/14609 , H01L27/14623 , H01L27/14643 , H04N5/374 , H04N5/37452
摘要： A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circuit node. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the circuit node. A plurality of storage pixel sensors are disposed in an array.
摘要翻译： 设置在半导体衬底上的存储像素传感器包括具有连接到固定电位的第一端子和第二端子的电容性存储元件。 光电二极管具有连接到第一电位和阴极的阳极。 半导体复位开关具有连接到阴极的第一端子和连接到复位电位的第二端子。 半导体转移开关具有连接到阴极的第一端子和连接到电容性存储元件的第二端子的第二端子。 半导体放大器具有连接到电容性存储元件的输入端和输出端。 半导体复位开关和半导体转移开关各自具有连接到用于选择性地激活半导体复位开关和半导体转移开关的控制电路的控制元件。 光屏蔽设置在半导体衬底的包括电路节点的部分上的部分上，该电路节点包括半导体转移开关的第二端子，电容性存储元件的第二端子和半导体放大器的输入端，并且基本上防止所有的光子进入电路 节点。 存在用于防止在半导体衬底中产生的基本上所有少数载流子进入电路节点的结构。 多个存储像素传感器被布置成阵列。
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公开(公告)号：US06636261B1
公开(公告)日：2003-10-21
申请号：US09493855
申请日：2000-01-28
IPC分类号： H04N5335
CPC分类号： H04N5/37452
摘要： A storage pixel sensor comprises a photosensor selectively connectable to a reset potential; a switched buffer amplifier having a control terminal coupled to said photosensor, a first terminal connected to a source of a transfer signal, and a second terminal; a storage capacitor coupled to said second terminal of said switched buffer amplifier; and an amplifier coupled to said storage capacitor.
摘要翻译： 存储像素传感器包括可选择性地连接到复位电位的光传感器; 开关缓冲放大器，其具有耦合到所述光传感器的控制端子，连接到传送信号源的第一端子和第二端子; 耦合到所述开关缓冲放大器的所述第二端的存储电容器; 以及耦合到所述存储电容器的放大器。
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7.发明授权Exposure control in electronic cameras by detecting overflow from active pixels 失效通过检测有源像素的溢出来在电子照相机中进行曝光控制公开(公告)号：US06452633B1
公开(公告)日：2002-09-17
申请号：US09031333
申请日：1998-02-26
IPC分类号： H01L27148
CPC分类号： H04N5/353 , H04N5/35572 , H04N5/3559 , H04N5/3594 , H04N5/361 , H04N5/37452
摘要： A method for controlling the exposure of an active pixel array electronic still camera includes the steps of: integrating photocurrent in each pixel during an integration time period; collecting overflow charge from all pixels in the array during the integration time period; developing an overflow signal as a function of the overflow charge; and terminating the integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level. Apparatus for performing the method of the present invention includes circuitry for integrating photocurrent in each pixel during a integration time period; circuitry for diverting and detecting overflow charge from all pixels in the array during the integration time period; circuitry for developing an overflow signal as a function of the overflow charge; and circuitry for terminating said integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level.
摘要翻译： 一种用于控制有源像素阵列电子静态照相机的曝光的方法包括以下步骤：在积分时间段内对每个像素中的光电流进行积分; 在积分时间段期间从阵列中的所有像素收集溢出电荷; 产生作为溢流电荷的函数的溢出信号; 并且当溢出信号超过所选择的预设阈值水平以表示期望的参考曝光水平时终止积分时间段。 用于执行本发明的方法的装置包括用于在积分时间段期间在每个像素中积分光电流的电路; 用于在积分时间段期间转移和检测阵列中所有像素的溢出电荷的电路; 作为溢出电荷的函数产生溢出信号的电路; 以及用于当溢出信号超过被选择以表示期望的参考曝光水平的预设阈值电平时终止所述积分时间段的电路。
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公开(公告)号：US06864557B2
公开(公告)日：2005-03-08
申请号：US10103304
申请日：2002-03-20
IPC分类号： H01L27/146 , H01L31/00
CPC分类号： H01L27/14647 , H01L27/14621
摘要： A vertical color detector group according to the present invention is formed on a semiconductor substrate and includes layers for collecting photons of different wavelength bands. The color detector group can be programmed to perform dynamic switching between sub-sampled color data and full measured color readout. The color detector group can also be configured in a portion of an array to emulate color filter array patterns, and programmed to dynamically alter the degree to which color information is sub-sampled. The programmable color detector groups can allow for switching between different levels of quality and resolution, allowing for selection of an optimal pattern based on image content or lighting conditions. By combining the color detector group of the present invention with conventional color filters, color filter arrays of more than three colors can be constructed.
摘要翻译： 根据本发明的垂直颜色检测器组形成在半导体衬底上，并且包括用于收集不同波长带的光子的层。 颜色检测器组可以被编程为在子采样的颜色数据和全测量的颜色读出之间执行动态切换。 颜色检测器组还可以被配置在阵列的一部分中以模拟滤色器阵列图案，并且被编程为动态地改变对颜色信息进行次采样的程度。 可编程颜色检测器组可以允许在不同级别的质量和分辨率之间切换，允许基于图像内容或照明条件选择最佳图案。 通过将本发明的颜色检测器组与传统的滤色器组合，可以构造出三种以上的颜色的滤色器阵列。
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9.发明授权Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group 有权具有非传感器滤波器的垂直滤色器传感器组以及用于制造这种传感器组的方法公开(公告)号：US06841816B2
公开(公告)日：2005-01-11
申请号：US10355940
申请日：2003-01-31
申请人： Richard B. Merrill , Richard F. Lyon , Richard M. Turner , Robert S. Hannebauer , Russel A. Martin
发明人： Richard B. Merrill , Richard F. Lyon , Richard M. Turner , Robert S. Hannebauer , Russel A. Martin
IPC分类号： H01L21/00 , H01L27/146 , H01L27/148 , H01L31/00 , H01L31/0216 , H01L31/107 , H01L31/113 , H01L33/00
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14647 , H01L27/14687 , H01L31/02162 , H01L31/107
摘要： A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.
摘要翻译： 形成在基板（优选半导体基板）上并且包括至少两个垂直堆叠的光敏传感器的垂直滤色器传感器组。 在优选实施例中，传感器组包括至少一个相对于传感器定位的过滤器，使得已经传播通过过滤器或从过滤器反射的辐射将传播到至少一个传感器。 优选地，滤波器是或包括通过半导体集成电路制造工艺已经与传感器集成的层。 在其他实施例中，传感器组包括微透镜。 本发明的其它方面是垂直滤色器传感器组的阵列，其中一些或全部包括至少一个滤光器或微透镜，以及用于制造垂直滤色器传感器组及其阵列的方法。
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10.发明授权High-sensitivity storage pixel sensor array having auto-exposure detection 有权具有自动曝光检测功能的高灵敏度存储像素传感器阵列公开(公告)号：US06760070B1
公开(公告)日：2004-07-06
申请号：US09527107
申请日：2000-03-16
IPC分类号： H04N5335
CPC分类号： H04N5/351 , H04N5/2351 , H04N5/3745
摘要： An integrated active pixel sensor array arranged in a plurality of rows and columns comprises a saturation level line coupled to a source of saturation level control voltage, a global current-summing node. A plurality of active pixel sensors is disposed in the array, each pixel sensor associated with one row and one column of the array and including a photodiode having a first terminal coupled to a first potential and a second terminal, a reset transistor having a first terminal coupled to the second terminal of the photodiode, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to the reset line, a photocharge integration node coupled to the second terminal of the photodiode, the photocharge integration node comprising the gate of a first source-follower transistor, the first source-follower transistor having a drain, coupled to a first source-follower drain line, and a source, a circuit for generating a bias current at the source of the first source follower transistor, and an exposure transistor having a source coupled to the source of the first source-follower transistor, a drain coupled to the global current-summing node and a control gate coupled to the saturation level line.
摘要翻译： 布置在多个行和列中的集成有源像素传感器阵列包括耦合到饱和电平控制电压源的饱和电平线，全局电流求和节点。 多个有源像素传感器被布置在阵列中，每个像素传感器与阵列的一行和一列相关联，并且包括具有耦合到第一电位的第一端和第二端的光电二极管，复位晶体管具有第一端 耦合到光电二极管的第二端子，耦合到反向偏置光电二极管的复位参考电位的第二端子和耦合到复位线的控制栅极，耦合到光电二极管的第二端子的光电荷积分节点，光电荷积分 包括第一源极 - 跟随器晶体管的栅极的第一源极跟随器晶体管，第一源极跟随器晶体管具有耦合到第一源极跟随器漏极线的漏极和源极，用于在第一源极的源极处产生偏置电流的电路 跟随器晶体管，以及具有耦合到第一源极 - 跟随器晶体管的源极的源极的曝光晶体管，耦合到全局电流求和的漏极 节点和耦合到饱和电平线的控制栅极。
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