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公开(公告)号：US06503322B1
公开(公告)日：2003-01-07
申请号：US09691994
申请日：2000-10-19
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1016
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.
摘要翻译： 用于根据切克劳斯基方法生长单晶硅锭的晶体拉拔器中使用的电阻加热器包括加热元件，其尺寸和形状适于放置在通常在坩埚上方的晶体拉出器的壳体内，与坩埚的外表面间隔开 生长的铸锭用于在铸锭相对于熔融硅在壳体中向上拉动时将热量散发到铸锭。 加热元件具有上端和下端。 当加热元件放置在壳体中时，加热元件的下端基本上比上端更靠近熔融硅。 加热元件被构造成使得由加热元件产生的加热功率输出从加热元件的下端逐渐增加到上端。
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2.发明授权Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections 失效用于晶体生长装置的电加热器，与下部相比，上部部分产生增加的加热功率
公开(公告)号：US6093913A
公开(公告)日：2000-07-25
申请号：US92391
申请日：1998-06-05
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1088
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for disposition in the housing of the crystal puller around the crucible for applying heat to the crucible and silicon therein. The heating element includes heating segments connected together in an electric circuit. The segments have upper and lower sections and are arranged relative to each other so that when disposed around the crucible containing molten silicon the upper sections are disposed generally above a horizontal plane including the surface of the molten silicon and the lower sections are disposed generally below the horizontal plane. The upper sections are constructed to generate more heating power than the lower sections thereby to reduce a temperature gradient between the molten silicon at its surface and the ingot just above the surface of the molten silicon. The upper sections have a thickness substantially equal to the thickness of the lower sections and have a width substantially less than the width of the lower sections. The cross-sectional area of the upper sections is everywhere less than the cross-sectional area of the lower sections.
摘要翻译： 用于根据切克劳斯基法生长单晶硅锭的晶体拉拔器中使用的电阻加热器包括加热元件，该加热元件的尺寸和形状用于配置在坩埚周围的晶体拉出器的外壳中，用于将坩埚和硅加热。 加热元件包括在电路中连接在一起的加热段。 这些段具有上部和下部并且相对于彼此布置，使得当围绕包含熔融硅的坩埚设置时，上部部分大致设置在包括熔融硅的表面的水平面的上方，并且下部通常设置在 水平面。 上部构造成产生比下部更多的加热功率，从而降低其表面处的熔融硅和正好在熔融硅表面之上的晶锭之间的温度梯度。 上部的厚度基本上等于下部的厚度，并且具有基本上小于下部的宽度的宽度。 上部的横截面面积小于下部的横截面面积。
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公开(公告)号：US5935328A
公开(公告)日：1999-08-10
申请号：US978334
申请日：1997-11-25
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for pulling a monocrystalline ingot from a semiconductor source material located within a growth chamber as the ingot is grown on a seed crystal according to the Czochralski method. The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The drum is capable of unwinding cable from the drum thereby to let out the cable and lower the chuck, and capable of winding the cable around the drum thereby to reel in the cable and draw the chuck upwardly. The chuck has a mass selected to exert a pre-tension on the cable prior to growing the ingot such that the increase in the friction on the portion of the cable wound around the drum as the cable is reeled in to pull the ingot from the source material is at least equal to the increase of the weight of the ingot as it grows on the seed crystal from the molten source material.
摘要翻译： 根据Czochralski方法，在晶种上生长晶锭时，从位于生长室内的半导体源材料拉出单晶锭的装置。 该装置包括一个滚筒，一个用于保持晶种和锭块的卡盘，以及一个连接到滚筒的第一端的电缆，连接到卡盘的第二端和缠绕在滚筒上的部分。 卷绕在滚筒周围的电缆的部分对应于电缆中的张力在鼓的圆周表面上施加法向力。 鼓和电缆相互作用以产生抵抗电缆相对于滚筒在电缆纵向方向上的滑动运动的摩擦力。 滚筒能够从滚筒中退绕电缆，从而排出电缆并降低卡盘，并且能够将电缆卷绕在滚筒周围，从而卷绕在电缆中并向上拉动卡盘。 卡盘具有选择的质量，以在生长锭之前在电缆上施加预张力，使得当电缆被卷入时绕线缠绕在电缆上的电缆的部分上的摩擦增加，以从源拉出锭 材料至少等于锭从熔融源材料在晶种上生长时其重量的增加。
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4.发明授权Directional solidification furnace for reducing melt contamination and reducing wafer contamination 有权定向凝固炉，用于减少熔体污染并减少晶圆污染公开(公告)号：US08317920B2
公开(公告)日：2012-11-27
申请号：US12563124
申请日：2009-09-19
IPC分类号： C30B11/02
CPC分类号： C30B11/002 , C30B11/02 , C30B28/06 , C30B29/06 , Y10T117/1092
摘要： A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
摘要翻译： 定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。 坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。
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公开(公告)号：US06482263B1
公开(公告)日：2002-11-19
申请号：US09684266
申请日：2000-10-06
IPC分类号： C30B3500
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A heat shield assembly is adapted for location within a crystal puller, with respect to a crucible, above molten source material held by the crucible in the puller. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten material and is generally interposed between the ingot and the crucible as the ingot is pulled from the source material. The heat shield assembly comprises an outer reflector having an inner surface and an outer surface in generally opposed, spaced relationship with a side wall of the crucible, and an inner reflector located inward of the outer reflector. The inner reflector is constructed of a material having a low emissivity and has an outer surface in generally opposed relationship with the inner surface of the outer reflector. At least one of the outer surface of the inner reflector and the inner surface of the outer reflector has a spacer projecting outward therefrom and adapted for contact relationship between the inner reflector and the outer reflector. The spacer spaces the outer surface of the inner reflector from the inner surface of the outer reflector to inhibit heat conduction from the outer reflector to the inner reflector.
摘要翻译： 热屏蔽组件适于位于晶体拉出器内，相对于坩埚，位于由拉拔器中的坩埚保持的熔融源材料上方。 隔热组件具有中心开口的尺寸和形状，用于当铸锭从熔融材料中拉出时围绕铸块，并且当铸锭从源材料拉出时，其通常介于锭和坩埚之间。 隔热组件包括外反射器，其具有与坩埚的侧壁大致相对且间隔开的内表面和外表面，以及位于外反射器内侧的内反射器。 内部反射器由具有低发射率的材料构成，并且具有与外部反射器的内表面大致相对关系的外表面。 内反射器的外表面和外反射器的内表面中的至少一个具有从其向外突出并适合于内反射器和外反射器之间的接触关系的间隔件。 间隔件将内反射器的外表面与外反射器的内表面隔开，以抑制从外反射器到内反射器的热传导。
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6.发明授权Directional solidification furnace for reducing melt contamination and reducing wafer contamination 有权定向凝固炉，用于减少熔体污染并减少晶圆污染公开(公告)号：US09222196B2
公开(公告)日：2015-12-29
申请号：US13354014
申请日：2012-01-19
CPC分类号： C30B11/002 , C30B11/02 , C30B28/06 , C30B29/06 , Y10T117/1092
摘要： A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
摘要翻译： 定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。 坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。
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7.发明申请公开(公告)号：US20120186299A1
公开(公告)日：2012-07-26
申请号：US13354014
申请日：2012-01-19
CPC分类号： C30B11/002 , C30B11/02 , C30B28/06 , C30B29/06 , Y10T117/1092
摘要： A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
摘要翻译： 定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。 坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。
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8.发明申请Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation 有权使用不平衡磁场和等旋转控制生长硅晶体的熔体 - 固体界面形状公开(公告)号：US20090320743A1
公开(公告)日：2009-12-31
申请号：US12493766
申请日：2009-06-29
申请人： Hariprasad Sreedharamurthy , Milind S. Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind S. Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
IPC分类号： C30B30/04
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
摘要翻译： 描述了一种用于生长有利于控制熔体 - 固体界面的形状的硅晶体的系统。 晶体生长系统包括加热的坩埚，其包括根据切克劳斯基（Czochralski）工艺生长单晶锭的半导体熔体。 铸锭在从熔体拉出的晶种上生长。 该方法包括向熔体施加不平衡的紧密磁场，并且在从熔体中拉出晶锭的同时使晶锭和坩埚旋转。
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9.发明授权Apparatus for controlling nucleation of oxygen precipitates in silicon crystals 失效用于控制硅晶体中氧沉淀物的成核的装置
公开(公告)号：US5840120A
公开(公告)日：1998-11-24
申请号：US589612
申请日：1996-01-22
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.
摘要翻译： 一种用于生产通过切克劳斯基（Czochralski）工艺生长的硅单晶的设备。 该设备包括中空生长室，设置在生长室内的石英坩埚，以及用于从保留在坩埚中的硅熔体向上拉出生长的硅单晶的拉动构件。 生长室上方的晶体室在被拉动时接收晶体。 连接构件连接生长室和晶体室。 第一加热构件限定了通过其被拉动的晶体的通道，用于防止在晶体中形成氧沉淀成核中心，直到晶体被拉过通道，至少部分地设置在生长室内。 限定晶体被拉动的通道的第二加热构件设置在晶体室内，用于控制晶体中氧沉淀成核中心的形成。
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10.发明授权Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation 有权使用不平衡磁场和等旋转控制生长中的硅晶体的熔体 - 固体界面形状公开(公告)号：US08398765B2
公开(公告)日：2013-03-19
申请号：US12493766
申请日：2009-06-29
申请人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
IPC分类号： C30B15/02
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
摘要翻译： 描述了一种用于生长有利于控制熔体 - 固体界面的形状的硅晶体的系统。 晶体生长系统包括加热的坩埚，其包括根据切克劳斯基（Czochralski）工艺生长单晶锭的半导体熔体。 铸锭在从熔体拉出的晶种上生长。 该方法包括向熔体施加不平衡的紧密磁场，并且在从熔体中拉出晶锭的同时使晶锭和坩埚旋转。
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