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公开(公告)号：US20120056135A1
公开(公告)日：2012-03-08
申请号：US13224019
申请日：2011-09-01
申请人： John P. DeLuca , Frank S. Delk, II , Bayard K. Johnson , William L. Luter , Neil D. Middendorf , Dick S. Williams , Nels Patrick Ostrom , James N. Highfill
发明人： John P. DeLuca , Frank S. Delk, II , Bayard K. Johnson , William L. Luter , Neil D. Middendorf , Dick S. Williams , Nels Patrick Ostrom , James N. Highfill
CPC分类号： C30B15/04 , C30B15/002 , C30B29/06
摘要： A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.
摘要翻译： 公开了具有小于10％的纵向和/或径向轴的电阻率变化的掺杂硅单晶以及制备一个或一系列顺序的掺杂硅晶体的方法。 该方法包括将包含硅的熔体材料提供到连续的切克劳斯基晶体生长装置中，将诸如镓，铟或铝的掺杂剂输送到熔体材料中，当熔体材料熔融时，将晶种提供到熔体材料中 形成并通过从熔体材料中取出晶种来生长掺杂的硅单晶。 在生长步骤期间将额外的熔体材料提供给设备。 还公开了一种用于计算在一个或多个掺杂事件期间输送到熔体材料中的掺杂剂的量的掺杂模型，用于输送掺杂剂的方法，以及用于输送掺杂剂的容器和容器的掺杂模型。
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公开(公告)号：US20110006235A1
公开(公告)日：2011-01-13
申请号：US12499196
申请日：2009-07-08
申请人： Dick S. Williams , William L. Luter
发明人： Dick S. Williams , William L. Luter
CPC分类号： F16K51/02 , F01L2003/25 , F16K3/06 , F16K3/10
摘要： A pendulum gate valve including an expandable gate which pivots when unexpanded to selectively block a vacuum or other pressure-differential passage. The valve includes a valve plate sealing one side of the passage and a ring abutting an opposed side of the passage when the gate member is expanded. A compression spring biases apart the valve plate and ring to close the valve by means of respective two-stage hangers attached thereto, extending along the spring, and having distal ends capturing the spring. Pneumatic pressure applied to a pneumatic cavity formed between the middles of the two-stage hangers and accommodating the spring forces apart the valve plate and ring to open the valve in the blocking position. Thereby if pressure fails, the valve fails to a sealed state. The axially movable valve plate is advantageously water cooled to allow use with a heated processing chamber.
摘要翻译： 摆闸闸阀包括可膨胀闸门，该膨胀闸门在未膨胀时枢转以选择性地阻塞真空或其它压差通道。 阀门包括密封通道的一侧的阀板和当门构件膨胀时邻接通道的相对侧的环。 压缩弹簧偏压阀板和环，通过附接到其上的相应的两级悬挂器来弹性地关闭阀门，该悬挂器沿着弹簧延伸并且具有捕获弹簧的远端。 施加到形成在两级吊架的中间之间的气动空腔的气动压力并且将弹簧力容纳在阀板和环之间以将阀门打开在阻挡位置。 因此，如果压力失效，则阀门不能成为密封状态。 可轴向移动的阀板有利地被水冷却以允许与加热的处理室一起使用。
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3.发明申请SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARATUS FOR PRODUCING SAME 审中-公开具有均匀多重掺杂物的硅芯及其制造方法和装置公开(公告)号：US20120301386A1
公开(公告)日：2012-11-29
申请号：US13446353
申请日：2012-04-13
CPC分类号： C30B15/04 , C30B15/002 , C30B15/12 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1052 , Y10T117/1056
摘要： A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.
摘要翻译： 公开了一种切克劳斯基生长系统，其包括坩埚，硅输送系统，其包括具有突出坩埚的输送点并将可控量的硅输送到坩埚中的进料器，以及至少一种掺杂机制，其可控制地将至少一种掺杂剂材料输送到 进料器 该系统可以包括两个或更多个掺杂机制，每个掺杂机制装载有不同的掺杂剂材料，因此可以用于制备具有多种掺杂剂的硅锭。 所产生的锭沿其轴线具有基本恒定的掺杂剂浓度。 还公开了至少一个含有至少一种掺杂剂材料的硅锭生长Czochralski的方法，其优选是连续的Czochralski法。
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公开(公告)号：US20120266808A1
公开(公告)日：2012-10-25
申请号：US13446414
申请日：2012-04-13
CPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , Y10T117/1064
摘要： A Czochralski growth system comprising a growth chamber, an isolation valve, a feed chamber containing feedstock, and a feeder is described. The isolation valve is disposed in at least one side wall of the growth chamber, and the feed chamber is vacuum sealed to the growth chamber through the isolation valve. The feeder is insertable into the growth chamber through the isolation valve and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.
摘要翻译： 描述了包括生长室，隔离阀，含有原料的进料室和进料器的切克劳斯基生长系统。 隔离阀设置在生长室的至少一个侧壁中，并且进料室通过隔离阀被真空密封到生长室。 进料器可通过隔离阀插入生长室，并将原料供应到生长室中。 优选地，该系统可以用于使用连续的切克劳斯基（Czochralski）方法来生产硅锭。
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公开(公告)号：US5762491A
公开(公告)日：1998-06-09
申请号：US551152
申请日：1995-10-31
申请人： Dick S. Williams , William L. Luter
发明人： Dick S. Williams , William L. Luter
CPC分类号： C30B15/02
摘要： A solid material delivery system for a furnace which melts the solid material has a delivery tube located at least partially within the furnace which is mounted by a rotor assembly for selective radial positioning in the furnace over a crucible in the furnace. The rotor assembly is constructed to compensate for thermal expansion and contraction caused by the furnace so that free movement of the delivery tube is achieved at all operating temperatures. The rotor assembly is also constructed to prevent jamming caused by particulate solid material in the rotor assembly. The delivery tube is formed so that flowable solid material will flow in a controlled fashion but without clogging to an outlet. The delivery tube and outlet are shaped to drop the material in a substantially columnar stream into the crucible.
摘要翻译： 用于熔化固体材料的炉子的固体材料输送系统具有至少部分位于炉内的输送管，该输送管由转子组件安装，用于在炉中的坩埚中选择性径向定位。 转子组件被构造成补偿由炉引起的热膨胀和收缩，从而在所有工作温度下实现输送管的自由运动。 转子组件也被构造成防止由转子组件中的固体物质引起的卡住。 输送管形成为使得可流动的固体材料以受控的方式流动，但是没有堵塞到出口。 输送管和出口成形为将材料以基本上柱状的流放入坩埚中。
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公开(公告)号：US06503322B1
公开(公告)日：2003-01-07
申请号：US09691994
申请日：2000-10-19
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1016
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.
摘要翻译： 用于根据切克劳斯基方法生长单晶硅锭的晶体拉拔器中使用的电阻加热器包括加热元件，其尺寸和形状适于放置在通常在坩埚上方的晶体拉出器的壳体内，与坩埚的外表面间隔开 生长的铸锭用于在铸锭相对于熔融硅在壳体中向上拉动时将热量散发到铸锭。 加热元件具有上端和下端。 当加热元件放置在壳体中时，加热元件的下端基本上比上端更靠近熔融硅。 加热元件被构造成使得由加热元件产生的加热功率输出从加热元件的下端逐渐增加到上端。
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公开(公告)号：US6053974A
公开(公告)日：2000-04-25
申请号：US234144
申请日：1999-01-19
申请人： William L. Luter , Lee W. Ferry
发明人： William L. Luter , Lee W. Ferry
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.
摘要翻译： 用于在填充有熔融半导体源材料的晶体拉出器中从坩埚生长的单晶锭周围的晶体拉出器中使用的隔热罩。 隔热罩包括具有中心开口的反射器，该中心开口的尺寸和形状用于围绕铸锭，以便铸锭生长以减少从坩埚传热。 反射器适于被支撑在熔融材料和照相机之间的晶体拉出器中，目标是在铸锭和熔融材料的上表面之间形成的弯月面上的三个分开的点处。 反射器至少有三个通过延伸穿过反射器的通道。 每个通道沿着在相机和弯液面上的一个点之间延伸的假想线设置。 这允许相机观察点，使得可以通过照相机来确定点的位置，以计算锭的直径，同时最小化通过通道的热损失。
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8.发明申请Retractable and expandable water cooled valve gate useful for sealing a hot processing chamber 审中-公开用于密封热处理室的可伸缩可膨胀水冷阀门公开(公告)号：US20110006236A1
公开(公告)日：2011-01-13
申请号：US12788191
申请日：2010-05-26
申请人： Dick S. Williams , William L. Luter
发明人： Dick S. Williams , William L. Luter
CPC分类号： F16K3/10 , F16K3/06 , F16K49/007 , F16K51/02
摘要： A pendulum gate valve including an expandable gate which pivots when unexpanded to selectively block a vacuum or other pressure-differential passage. The valve includes a valve plate sealing one side of the passage and a ring or barrier plate abutting an opposed side of the passage when the gate member is expanded. A compression spring biases apart the valve plate and ring to close the valve by means of respective two-stage hangers attached thereto, extending along the spring, and having distal ends capturing the spring. Pneumatic pressure applied to a pneumatic cavity formed between the middles of the two-stage hangers and accommodating the spring forces apart the valve plate and ring to open the valve in the blocking position. Thereby if pressure fails, the valve fails to a sealed state. The axially movable valve or barrier plate is advantageously water cooled to allow use with a heated processing chamber.
摘要翻译： 摆闸闸阀包括可膨胀闸门，该膨胀闸门在未膨胀时枢转以选择性地阻塞真空或其它压差通道。 阀门包括密封通道的一侧的阀板和当门构件膨胀时邻接通道的相对侧的环或阻挡板。 压缩弹簧偏压阀板和环，通过附接到其上的相应的两级悬挂器来弹性地关闭阀门，该悬挂器沿着弹簧延伸并且具有捕获弹簧的远端。 施加到形成在两级吊架的中间之间的气动空腔的气动压力并且将弹簧力容纳在阀板和环之间以将阀门打开在阻挡位置。 因此，如果压力失效，则阀门不能成为密封状态。 可轴向移动的阀或阻挡板有利地是水冷却以允许与加热的处理室一起使用。
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公开(公告)号：US5922127A
公开(公告)日：1999-07-13
申请号：US940166
申请日：1997-09-30
申请人： William L. Luter , Lee W. Ferry
发明人： William L. Luter , Lee W. Ferry
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.
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10.发明授权公开(公告)号：US10202705B2
公开(公告)日：2019-02-12
申请号：US13446353
申请日：2012-04-13
摘要： A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.
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