公开(公告)号：US20060197126A1

公开(公告)日：2006-09-07

申请号：US11416423

申请日：2006-05-02

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US07074623B2

公开(公告)日：2006-07-11

申请号：US10456708

申请日：2003-06-06

申请人： Anthony J. Lochtefeld ,  Thomas A. Langdo ,  Richard Hammond ,  Matthew T. Currie ,  Glyn Braithwaite ,  Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld ,  Thomas A. Langdo ,  Richard Hammond ,  Matthew T. Currie ,  Glyn Braithwaite ,  Eugene A. Fitzgerald

IPC分类号： H01L21/335 ,  H01L21/00 ,  H01L21/84 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20060197125A1

公开(公告)日：2006-09-07

申请号：US11415784

申请日：2006-05-02

申请人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

发明人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US06680496B1

公开(公告)日：2004-01-20

申请号：US10191006

申请日：2002-07-08

申请人： Richard Hammond ,  Glyn Braithwaite

发明人： Richard Hammond ,  Glyn Braithwaite

IPC分类号： H01L2978

CPC分类号： H01L29/802

摘要： Transistors including a buried channel layer intermediate to a source and a drain and a surface layer intermediate to the buried layer and a gate are operated so as to cause current between the source and the drain to flow predominately through the buried channel layer by applying a back-bias voltage to the transistor. The back-bias voltage modulates a free charge carrier density distribution in the buried layer and in the surface layer.

公开(公告)号：US20120299120A1

公开(公告)日：2012-11-29

申请号：US13568944

申请日：2012-08-07

申请人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

发明人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

IPC分类号： H01L27/088

CPC分类号： H01L29/7378 ,  H01L27/0617 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78654 ,  H03B5/1203 ,  H03B5/1209 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1228 ,  H03B5/1243 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099

摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.

摘要翻译： 用于处理射频（RF）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变通道层的场效应晶体管（FET）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 RF电路，例如压电振荡器（VCO），低噪声放大器（LNA）和使用这些FET构建的锁相环（PLL）也表现出增强的性能。

公开(公告)号：US20110121362A1

公开(公告)日：2011-05-26

申请号：US13017694

申请日：2011-01-31

申请人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

发明人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

IPC分类号： H01L27/088

CPC分类号： H01L29/7378 ,  H01L27/0617 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78654 ,  H03B5/1203 ,  H03B5/1209 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1228 ,  H03B5/1243 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099

摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.

摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。

公开(公告)号：US20060197124A1

公开(公告)日：2006-09-07

申请号：US11415706

申请日：2006-05-01

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20050280103A1

公开(公告)日：2005-12-22

申请号：US11211933

申请日：2005-08-25

申请人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

发明人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

IPC分类号： H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US06933518B2

公开(公告)日：2005-08-23

申请号：US10253361

申请日：2002-09-24

申请人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

发明人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

IPC分类号： H01L27/06 ,  H01L27/092 ,  H01L29/10 ,  H01L29/51 ,  H01L29/786 ,  H03B5/12 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099 ,  H01L29/06

CPC分类号： H01L29/7378 ,  H01L27/0617 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78654 ,  H03B5/1203 ,  H03B5/1209 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1228 ,  H03B5/1243 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099

摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.

公开(公告)号：US20100264995A1

公开(公告)日：2010-10-21

申请号：US12767671

申请日：2010-04-26

申请人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

发明人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

IPC分类号： H03B5/12 ,  H03F3/16

CPC分类号： H01L29/7378 ,  H01L27/0617 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78654 ,  H03B5/1203 ,  H03B5/1209 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1228 ,  H03B5/1243 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099

摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.

摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。