专利检索 ap:("Anthony J. Lochtefeld" OR "Thomas A. Langdo" OR "Richard Hammond" OR "Matthew T. Currie" OR "Glyn Braithwaite" OR "Eugene A. Fitzgerald") AND inv:"Eugene A. Fitzgerald" 第 1 页

1.

发明授权
Methods of forming strained-semiconductor-on-insulator finFET device structures 有权
标题翻译：形成应变半导体绝缘体finFET器件结构的方法

公开(公告)号：US07074623B2

公开(公告)日：2006-07-11

申请号：US10456708

申请日：2003-06-06

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Glyn Braithwaite , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Glyn Braithwaite , Eugene A. Fitzgerald

IPC分类号： H01L21/335 , H01L21/00 , H01L21/84 , H01L21/8234 , H01L21/336

CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

2.

发明授权
Strained-semiconductor-on-insulator finFET device structures 有权
标题翻译：应变半导体绝缘体finFET器件结构

公开(公告)号：US07109516B2

公开(公告)日：2006-09-19

申请号：US11211933

申请日：2005-08-25

申请人： Thomas A. Langdo , Matthew T. Currie , Glyn Braithwaite , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Glyn Braithwaite , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L31/0328 , H01L29/745 , H01L27/148 , H01L29/80 , H01L21/332 , H01L21/00

CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

3.

发明授权
Methods for forming semiconductor device structures 有权

公开(公告)号：US08586452B2

公开(公告)日：2013-11-19

申请号：US13227077

申请日：2011-09-07

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

IPC分类号： H01L21/36

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

4.

发明申请
METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：形成半导体器件结构的方法

公开(公告)号：US20110318893A1

公开(公告)日：2011-12-29

申请号：US13227077

申请日：2011-09-07

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

IPC分类号： H01L21/336 , H01L21/265 , H01L21/20

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

5.

发明申请
III-V Semiconductor Device Structures 有权
标题翻译： III-V半导体器件结构

公开(公告)号：US20110073908A1

公开(公告)日：2011-03-31

申请号：US12907787

申请日：2010-10-19

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

IPC分类号： H01L29/20

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

6.

发明授权
Methods for forming III-V semiconductor device structures 有权
标题翻译：形成III-V半导体器件结构的方法

公开(公告)号：US07838392B2

公开(公告)日：2010-11-23

申请号：US11943188

申请日：2007-11-20

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/30

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

7.

发明授权
Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain 有权
标题翻译：通过机械诱导应变形成绝缘体上半导体器件结构的方法

公开(公告)号：US07588994B2

公开(公告)日：2009-09-15

申请号：US11128628

申请日：2005-05-13

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/46

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

8.

发明授权
Strained-semiconductor-on-insulator device structures 有权

公开(公告)号：US06995430B2

公开(公告)日：2006-02-07

申请号：US10456103

申请日：2003-06-06

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L31/039

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

9.

发明授权
Strained-semiconductor-on-insulator device structures with elevated source/drain regions 有权
标题翻译：具有升高的源极/漏极区域的应变半导体绝缘体上器件结构

公开(公告)号：US07420201B2

公开(公告)日：2008-09-02

申请号：US11125507

申请日：2005-05-10

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/336

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

10.

发明授权
Strained germanium-on-insulator device structures 有权
标题翻译：应变锗绝缘体上的器件结构

公开(公告)号：US07414259B2

公开(公告)日：2008-08-19

申请号：US11126550

申请日：2005-05-11

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L31/0392

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

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