利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

48 条记录 (耗时 0.021 秒)

    Perpendicular pole structure and method of fabricating the same
    1.
    发明申请
    Perpendicular pole structure and method of fabricating the same 有权

    公开(公告)号：US20050184840A1

    公开(公告)日：2005-08-25

    申请号：US10882507

    申请日：2004-06-30

    申请人： Richard Hsiao ,  Wipul Jayasekara ,  Jeffrey Lille

    发明人： Richard Hsiao ,  Wipul Jayasekara ,  Jeffrey Lille

    IPC分类号： B24B1/00 ,  G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/265

    CPC分类号： G11B5/1278

    摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

    PERPENDICULAR POLE STRUCTURE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    PERPENDICULAR POLE STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
    圆锥形结构及其制造方法

    公开(公告)号：US20080026254A1

    公开(公告)日：2008-01-31

    申请号：US11836732

    申请日：2007-08-09

    申请人： Richard Hsiao ,  Wipul Jayasekara ,  Jeffrey Lille

    发明人： Richard Hsiao ,  Wipul Jayasekara ,  Jeffrey Lille

    IPC分类号： G11B5/33

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/11 ,  Y10T428/1157

    摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

    摘要翻译： 诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。 将一层聚酰亚胺前体材料添加到极尖层上方并固化。 将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。 将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。 去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。 去除极尖端部的暴露部分以形成极尖。 然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

    Perpendicular pole structure and method of fabricating the same
    3.
    发明申请
    Perpendicular pole structure and method of fabricating the same 失效
    垂直极结构及其制造方法

    公开(公告)号：US20050185332A1

    公开(公告)日：2005-08-25

    申请号：US10883336

    申请日：2004-06-30

    申请人： Richard Hsiao ,  Wipul Jayasekara ,  Jeffrey Lille

    发明人： Richard Hsiao ,  Wipul Jayasekara ,  Jeffrey Lille

    IPC分类号： B24B1/00 ,  G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/265

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/11 ,  Y10T428/1157

    摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

    摘要翻译： 诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。 将一层聚酰亚胺前体材料添加到极尖层上方并固化。 将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。 将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。 去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。 去除极尖端部的暴露部分以形成极尖。 然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

    perpendicular pole tip and method of fabrication
    4.
    发明申请
    perpendicular pole tip and method of fabrication 有权
    垂直极尖和制造方法

    公开(公告)号：US20050185338A1

    公开(公告)日：2005-08-25

    申请号：US10785236

    申请日：2004-02-23

    申请人： Richard Hsiao ,  Wipul Jayaekara ,  Jeffrey Lille

    发明人： Richard Hsiao ,  Wipul Jayaekara ,  Jeffrey Lille

    IPC分类号： B24B1/00 ,  G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/265

    CPC分类号： G11B5/1278 ,  Y10T29/49021

    摘要： A method for forming a magnetic structure, such as a pole tip, includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

    摘要翻译： 用于形成诸如极尖的磁性结构的方法包括形成磁性材料的磁极尖端层。 将一层聚酰亚胺前体材料添加到极尖层上方并固化。 将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。 将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。 去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。 去除极尖端部的暴露部分以形成极尖。 然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

    Storage device with slider with sacrificial lapping extension
    5.
    发明申请
    Storage device with slider with sacrificial lapping extension 失效
    带有牺牲研磨延伸的滑块的存储设备

    公开(公告)号：US20080007872A1

    公开(公告)日：2008-01-10

    申请号：US11901748

    申请日：2007-09-19

    申请人： Richard Bunch ,  Jeffrey Lille ,  Huey-Ming Tzeng

    发明人： Richard Bunch ,  Jeffrey Lille ,  Huey-Ming Tzeng

    IPC分类号： G11B5/60

    CPC分类号： G11B5/6005 ,  B24B37/048 ,  G11B5/3106 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/6082 ,  Y10T29/49037

    摘要： A process for fabricating sliders with one or more sacrificial structures (extensions) that facilitate lapping to create the air-bearing surface (ABS) is described. Prior to separating individual sliders from a wafer, a mask outlines a sacrificial extension around portions of the magnetic transducer elements that are nearest the predetermined plane which will become the ABS. The sacrificial extension extends below the predetermined ABS plane. When the sliders are individually separated by DRIE, the shape of the mask including the sacrificial extension is projected down into and along the slider body. In one embodiment, a channel is disposed on the side of the slider opposite the ABS to provide space for the sacrificial extension of the adjacent slider and allow the sliders to be spaced closer together on the wafer surface for more efficient use of the wafer during head fabrication.

    摘要翻译： 描述了一种用于制造具有一个或多个牺牲结构（延伸部分）的滑块的方法，其便于研磨以产生空气轴承表面（ABS）。 在将各个滑块与晶片分开之前，掩模围绕最靠近将成为ABS的预定平面的磁换能器元件周围的牺牲延伸。 牺牲延伸部延伸到预定的ABS平面以下。 当滑块由DRIE单独分开时，包括牺牲延伸部分的面罩的形状向下突出并沿着滑块体。 在一个实施例中，通道设置在与ABS相对的滑块的侧面上，以为相邻滑块的牺牲延伸提供空间，并允许滑块在晶片表面上更靠近在一起，以在头部期间更有效地使用晶片 制造。

    Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
    8.
    发明申请
    Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效
    具有叠层纵向偏置层结构的三端磁传感器

    公开(公告)号：US20060152859A1

    公开(公告)日：2006-07-13

    申请号：US11032598

    申请日：2005-01-10

    申请人： Jeffrey Childress ,  Robert Fontana ,  Jeffrey Lille

    发明人： Jeffrey Childress ,  Robert Fontana ,  Jeffrey Lille

    IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/147 ,  H01L29/82 ,  H01L43/00

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01L29/66984 ,  H01L43/08

    摘要： A three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. An air bearing surface (ABS) sensing plane of the TTM is defined along sides of the base region, the collector region, and the emitter region. The base region includes a free layer structure, a pinned layer structure, a first non-magnetic spacer layer formed between the free layer structure and the pinned layer structure, an in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure, and a second non-magnetic spacer layer formed between the free layer structure and the in-stack longitudinal biasing layer structure. In one variation, the layers in the base region are inverted. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

    摘要翻译： 适用于磁头的三端磁传感器（TTM）具有基极区域，集电极区域和发射极区域。 第一阻挡层位于发射极区域和基极区域之间，第二阻挡层位于集电极区域和基极区域之间。 TTM的空气轴承表面（ABS）感测平面沿着基极区域，集电极区域和发射极区域的侧面被限定。 基极区域包括自由层结构，钉扎层结构，形成在自由层结构和被钉扎层结构之间的第一非磁性间隔层，叠层纵向偏置层（LBL）结构，其磁性地偏置自由层 结构，以及形成在自由层结构和叠层间纵向偏置层结构之间的第二非磁性间隔层。 在一个变型中，基区中的层被倒置。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

    Three terminal magnetic sensor for magnetic heads with a semiconductor junction and process for producing same
    10.
    发明申请
    Three terminal magnetic sensor for magnetic heads with a semiconductor junction and process for producing same 失效
    具有半导体结的磁头的三端磁传感器及其制造方法

    公开(公告)号：US20060023370A1

    公开(公告)日：2006-02-02

    申请号：US10902995

    申请日：2004-07-30

    申请人： Jeffrey Lille

    发明人： Jeffrey Lille

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

    摘要： The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to the semiconductor layers, where a semiconductor junction between the layers is disposed between the two leads. Generally, the junction may comprise a P-N junction between a P-type layer and an N-type layer and in an embodiment of the present invention the collector lead is engaged to the P-type semiconductor layer and the base lead is connected to the N-type semiconductor layer. The spin valve structure is fabricated upon the semiconductor structure and the emitter is engaged to the spin valve structure. In this configuration, a free magnetic layer of the spin valve structure is fabricated upon the semiconductor material, such that a schottky barrier is formed between the metallic free magnetic layer material and the semiconductor material.

    摘要翻译： TTM传感器包括半导体结构和自旋阀结构，其中半导体结构包括至少两层。 TTM传感器的三个引线中的两个接合到半导体层，其中层之间的半导体结被设置在两个引线之间。 通常，结可以包括P型层和N型层之间的PN结，并且在本发明的实施例中，集电极引线接合到P型半导体层，并且基极连接到N型层 型半导体层。 自旋阀结构被制造在半导体结构上，并且发射极接合到自旋阀结构。 在该结构中，在半导体材料上制造自旋阀结构的自由磁性层，使得在金属自由磁性层材料和半导体材料之间形成肖特基势垒。