公开(公告)号：US6063690A

公开(公告)日：2000-05-16

申请号：US999476

申请日：1997-12-29

申请人： Richard L. Woodruff ,  David B. Kerwin ,  John T. Chaffee

发明人： Richard L. Woodruff ,  David B. Kerwin ,  John T. Chaffee

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76221

摘要： A method of forming a recessed electrically-insulating field oxide region in a semiconductor substrate is disclosed. In a preferred embodiment, the method includes the steps of oxidizing a surface of the substrate; depositing a polysilicon layer over the oxide layer; depositing a silicon nitride layer over the polysilicon layer; patterning the silicon nitride and polysilicon layers and etching away both layers where the field oxide is to be located; forming a field oxide by thermally oxidizing the substrate in the openings previously formed in the silicon nitride and polysilicon layers; etching away the thermal field oxide; thermally oxidizing the substrate in the etched-away field oxide areas; etching away the silicon nitride layer; optionally, implanting through the thermal oxide with an impurity; depositing a doped oxide; densifying the oxide in a steam ambient; etching back the deposited oxide; then either depositing an undoped CVD oxide, coating the oxide with a leveling layer to planarize the oxide surface, etching both the undoped CVD oxide and leveling layers and etching away the polysilicon; or etching away the polysilicon, leaching the dopants out of the surface of the field oxide structure and passivating the surface in a dry oxygen ambient.

摘要翻译： 公开了一种在半导体衬底中形成凹陷的电绝缘场氧化物区域的方法。 在优选的实施方案中，该方法包括氧化基材表面的步骤; 在所述氧化物层上沉积多晶硅层; 在所述多晶硅层上沉积氮化硅层; 图案化氮化硅和多晶硅层并蚀刻去除场氧化物所在的两层; 通过在先前形成在氮化硅和多晶硅层中的开口中的衬底热氧化来形成场氧化物; 蚀刻掉热场氧化物; 在蚀刻掉的氧化物区域中热氧化衬底; 蚀刻掉氮化硅层; 任选地，通过具有杂质的热氧化物注入; 沉积掺杂氧化物; 在蒸汽环境中使氧化物致密化; 蚀刻沉积的氧化物; 然后沉积未掺杂的CVD氧化物，用平整层涂覆氧化物以平坦化氧化物表面，蚀刻未掺杂的CVD氧化物和流平层并蚀刻掉多晶硅; 或蚀刻掉多晶硅，将掺杂剂从场氧化物结构的表面浸出并在干氧环境中钝化表面。

公开(公告)号：US06511893B1

公开(公告)日：2003-01-28

申请号：US09072932

申请日：1998-05-05

申请人： Richard L. Woodruff ,  Scott M. Tyson ,  John T. Chaffee ,  David B. Kerwin

发明人： Richard L. Woodruff ,  Scott M. Tyson ,  John T. Chaffee ,  David B. Kerwin

IPC分类号： H01L21336

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L21/76202

摘要： A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.

摘要翻译： 一种制造具有限定的有源区和隔离区的辐射硬化半导体器件的方法。 隔离区域包含隔离材料和活性区域，活性区域在活性隔离区域和隔离区域之间包含过渡区域，有时表示为鸟的喙区域。 其中在过渡区域中注入锗和硼，以防止在有源器件之间或在有源器件内形成泄漏路径。 可以将注入区域进一步限制为适合被栅极材料例如多晶硅覆盖的过渡区域的区域。

公开(公告)号：US06855618B2

公开(公告)日：2005-02-15

申请号：US10284230

申请日：2002-10-30

申请人： Richard L. Woodruff ,  Scott M. Tyson ,  John T. Chaffee ,  David B. Kerwin

发明人： Richard L. Woodruff ,  Scott M. Tyson ,  John T. Chaffee ,  David B. Kerwin

IPC分类号： H01L21/265 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L21/76202

摘要： A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.

摘要翻译： 一种制造具有限定的有源区和隔离区的辐射硬化半导体器件的方法。 隔离区域包含隔离材料和活性区域，活性区域在活性隔离区域和隔离区域之间包含过渡区域，有时表示为鸟的喙区域。 其中在过渡区域中注入锗和硼，以防止在有源器件之间或在有源器件内形成泄漏路径。 可以将注入区域进一步限制为适合被栅极材料例如多晶硅覆盖的过渡区域的区域。

公开(公告)号：US5037781A

公开(公告)日：1991-08-06

申请号：US220764

申请日：1988-07-05

申请人： Richard L. Woodruff ,  John T. Chaffee ,  Craig Hafer

发明人： Richard L. Woodruff ,  John T. Chaffee ,  Craig Hafer

IPC分类号： H01L21/316 ,  H01L21/762

CPC分类号： H01L21/02129 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/31604 ,  H01L21/31662 ,  H01L21/762 ,  Y10S428/901

摘要： A radiation-hardened field oxide comprises a thin layer of high-quality thermal oxide, a thick layer of borophosphosilica glass and a diffusion barrier layer of undoped oxide, with the boron and phosphorous provising recombination sites for electron-hole pairs.

摘要翻译： 辐射硬化的场氧化物包括高质量的热氧化物的薄层，厚层的硼磷硅玻璃和未掺杂的氧化物的扩散阻挡层，硼和磷提供电子 - 空穴对的重组位点。

公开(公告)号：US20070148890A1

公开(公告)日：2007-06-28

申请号：US11318797

申请日：2005-12-27

申请人： Darwin G. Enicks ,  John T. Chaffee ,  Damian A. Carver

发明人： Darwin G. Enicks ,  John T. Chaffee ,  Damian A. Carver

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base having incorporated oxygen and an electronic device incorporating the base is described. The strain-compensated base is doped by substitutional and/or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.

摘要翻译： 描述了一种用于拟合生长并整合了应变补偿的纳入氧气的亚稳态和/或不稳定化合物碱的方法以及结合该碱的电子器件。 应变补偿基底通过应变补偿原子物质的置换和/或间隙放置进行掺杂。 电子设备可以是例如SiGe NPN HBT。