公开(公告)号：US06482672B1

公开(公告)日：2002-11-19

申请号：US09186587

申请日：1998-11-05

申请人： Richard W. Hoffman ,  David M. Wilt

发明人： Richard W. Hoffman ,  David M. Wilt

IPC分类号： H01L2120

CPC分类号： H01L31/1844 ,  H01L31/03046 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/93 ,  Y10S438/936

摘要： A method for growing InxGa1−xAs epitaxial layer on a lattice mismatched InP substrate calls for depositing by organo-metallic vapor phase epitaxy, or other epitaxial layer growth technique, a plurality of discreet layers of InAsyP1−y over an InP substrate. These layers provide a buffer. Each succeeding buffer layer has a distinct composition which produces less than a critical amount of lattice mismatch relative to the preceding layer. An InxGa1−xAs epitaxial layer is grown over the buffer wherein 0.53≦x≦0.76. A resulting InGaAs structure comprises an InP substrate with at least one InAsP buffer layer sandwiched between the substrate and the InGaAs epitaxial layer. The buffer layer has a critical lattice mismatch of less than 1.3% relative to the substrate. Additional buffer layers will likewise have a lattice mismatch of no more than 1.3% relative to the preceding layer. The number of buffer layers is determined by the resulting bandgap desired in the InGaAs epitaxial layer, which, in turn, determines the composition of the InxGa1−xAs epitaxial layer, and thus, the lattice mismatch.

摘要翻译： 在晶格失配的InP衬底上生长In x Ga 1-x As外延层的方法要求通过有机金属气相外延或其它外延层生长技术在InP衬底上沉积多个离散的InAsyP1-y层。 这些层提供了一个缓冲区。 每个后续缓冲层具有相对于前一层产生小于临界量的晶格失配的不同组成。 In x Ga 1-x As外延层生长在缓冲器上，其中0.53≤x≤0.76。所得的InGaAs结构包括InP衬底，其具有夹在衬底和InGaAs外延层之间的至少一个InAsP缓冲层。 缓冲层相对于衬底具有小于1.3％的临界晶格失配。 附加的缓冲层同样具有相对于前一层不超过1.3％的晶格失配。 缓冲层的数量由InGaAs外延层中所需的所得到的带隙确定，InGaAs外延层决定了In x Ga 1-x As外延层的组成，从而确定晶格失配。

公开(公告)号：US20080023725A1

公开(公告)日：2008-01-31

申请号：US11495811

申请日：2006-07-28

申请人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

发明人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

IPC分类号： H01L31/00

CPC分类号： H01L21/02546 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02661 ,  H01L21/8252 ,  H01L27/0605

摘要： A method of fabricating an epitaxial compound semiconductor III-V wafer suitable for the subsequent fabrication of at least two different types of integrated active devices (such as an HBT and a FET) on such wafer by providing a substrate; growing a first epitaxial structure on the substrate; and growing a second epitaxial structure on the first epitaxial structure.

摘要翻译： 一种制造外延化合物半导体III-V晶片的方法，其适用于通过提供衬底在此晶片上随后制造至少两种不同类型的集成有源器件（例如HBT和FET）; 在衬底上生长第一外延结构; 以及在所述第一外延结构上生长第二外延结构。

公开(公告)号：US08288797B2

公开(公告)日：2012-10-16

申请号：US12964529

申请日：2010-12-09

申请人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

发明人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

IPC分类号： H01L29/66

CPC分类号： H01L29/66462 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02661 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/66924

摘要： A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.

摘要翻译： 一种通过提供衬底在包括至少两种不同类型的有源器件的复合半导体III-V晶片上制造集成电路的方法; 在衬底上生长第一外延结构; 在第一外延结构上生长第二外延结构; 以及处理外延结构以形成不同类型的有源器件，例如HBT和FET。

公开(公告)号：US5211301A

公开(公告)日：1993-05-18

申请号：US826072

申请日：1992-01-27

申请人： Robert J. Groya ,  Richard W. Hoffman

发明人： Robert J. Groya ,  Richard W. Hoffman

IPC分类号： B65D47/08

CPC分类号： B65D47/0847

摘要： A spooning closure generally comprising a skirt a top, a spooning opening and a hinged spooning lid which is adapted to pivot from a closed position to an open spooning position. A locking means is provided, which is adapted to securely and releasably lock the spooning lid in the closed position. The locking means comprises a tongue and a friction engaging slot. It may further comprise an arcuate latch projection which extends at an acute angle to the spooning lid bottom surface and a cooperating keeper which partially defines the spooning opening and is formed by an arcuate cantilever. Also provided is a reinforcing web extending from the bottom of the spooning lid.

摘要翻译： 一个通常包括裙部顶部，勺子开口和铰接式勺子盖的勺子盖子，其适于从关闭位置枢转到开放勺子位置。 提供了锁定装置，其适于将勺盖牢固地和可释放地锁定在关闭位置。 锁定装置包括舌部和摩擦接合槽。 它还可以包括弓形闩锁突起，其与勺子盖底表面成锐角地延伸，并且配合保持器部分地限定勺子开口，并由弓形悬臂形成。 还提供了从勺子盖的底部延伸的加强网。

公开(公告)号：US20110079821A1

公开(公告)日：2011-04-07

申请号：US12964529

申请日：2010-12-09

申请人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

发明人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

IPC分类号： H01L27/07

CPC分类号： H01L29/66462 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02661 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/66924

摘要： A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.

摘要翻译： 一种通过提供衬底在包括至少两种不同类型的有源器件的复合半导体III-V晶片上制造集成电路的方法; 在衬底上生长第一外延结构; 在第一外延结构上生长第二外延结构; 以及处理外延结构以形成不同类型的有源器件，例如HBT和FET。

公开(公告)号：US20080026545A1

公开(公告)日：2008-01-31

申请号：US11494969

申请日：2006-07-28

申请人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

发明人： Paul Cooke ,  Richard W. Hoffman ,  Victor Labyuk ,  Sherry Qianwen Ye

IPC分类号： H01L21/20

CPC分类号： H01L29/66462 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02661 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/66924

摘要： A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.

摘要翻译： 一种通过提供衬底在包括至少两种不同类型的有源器件的复合半导体III-V晶片上制造集成电路的方法; 在衬底上生长第一外延结构; 在第一外延结构上生长第二外延结构; 以及处理外延结构以形成不同类型的有源器件，例如HBT和FET。

公开(公告)号：US5090583A

公开(公告)日：1992-02-25

申请号：US675696

申请日：1991-03-27

申请人： Richard W. Hoffman ,  John Kinsley ,  Michael Illenberger

发明人： Richard W. Hoffman ,  John Kinsley ,  Michael Illenberger

IPC分类号： B65D47/14 ,  B65D55/02

CPC分类号： B65D47/147 ,  B65D55/024 ,  B65D2101/0023

摘要： A tamper-evident, tamper-resistant closure for an open neck container having a detachable closure cap that is adapted to open and close the dispenser end. A breakaway tether is integrally molded to the closure cap and a first closure ring which fits within the closure cap and around the container neck. A second tether is integrally formed with the closure cap and a second closure ring. The breakaway tether will rupture if this container is tampered with. Also the breakaway tether may be broken when the contents of the container is to be used. The second tether securely maintains the closure cap attached to the main closure.

摘要翻译： 用于开口颈部容器的防篡改的防篡改闭合件，其具有适于打开和关闭分配器端部的可拆卸闭合盖。 分离系绳整体模制到封闭盖和第一闭合环，该闭合环装配在封闭盖内并围绕容器颈部。 第二系绳与闭合盖和第二闭合环一体地形成。 如果这个容器被篡改，分离系绳会破裂。 当使用容器的内容物时，分离系绳也可能被破坏。 第二系绳牢固地保持附接到主盖的封闭帽。