公开(公告)号：US09753369B2

公开(公告)日：2017-09-05

申请号：US14007096

申请日：2012-03-19

申请人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

IPC分类号： G03C5/29 ,  G03F7/32 ,  H01L21/027 ,  H01L21/306 ,  H01L21/033 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26

CPC分类号： G03F7/325 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/306

摘要： Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.

公开(公告)号：US20140038415A1

公开(公告)日：2014-02-06

申请号：US14007096

申请日：2012-03-19

申请人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

IPC分类号： G03F7/32 ,  H01L21/306

CPC分类号： G03F7/325 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/306

摘要： Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.

摘要翻译： 公开了一种显影剂，其不会在形成过程中引起图案塌陷，从而形成精细图案以及使用显影剂形成图案的方法。 在光刻工艺中使用的显影剂包括用于形成干蚀刻掩模和有机溶剂的聚合物。 聚合物优选为与形成抗蚀剂膜的可固化树脂不同的可固化树脂。 显影剂优选在抗蚀剂膜曝光之后使用。 显影剂中的有机溶剂优选为乙酸丁酯或乙酸丁酯与醇或2-戊酮或2-戊酮与醇的混合溶剂的混合溶剂。 还公开了一种半导体器件的制造方法。

公开(公告)号：US11675269B2

公开(公告)日：2023-06-13

申请号：US13880470

申请日：2011-09-15

申请人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

发明人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

IPC分类号： G03F7/11 ,  C08L61/06 ,  C08G8/08 ,  C09D161/06 ,  G03F7/09 ,  C08G8/24 ,  C09D5/00 ,  C08F12/24 ,  C08F212/14

CPC分类号： G03F7/11 ,  C08G8/08 ,  C08G8/24 ,  C08L61/06 ,  C09D5/00 ,  C09D161/06 ,  G03F7/091 ,  C08F12/24 ,  C08F212/24 ,  C08F212/32 ,  C08F212/24 ,  C08F220/06

摘要： There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

公开(公告)号：US20110230058A1

公开(公告)日：2011-09-22

申请号：US13131474

申请日：2009-11-19

申请人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

发明人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

IPC分类号： H01L21/31 ,  G03F7/20 ,  C08G73/06 ,  C08F224/00 ,  C09D179/04 ,  C09D163/00

CPC分类号： G03F7/091 ,  G03F7/093

摘要： There is provided underlayer films of high-energy radiation resists that are applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation. A composition for forming an underlayer film of a high-energy radiation resist, the composition comprising a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained preferably in a film at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.

摘要翻译： 在用于制造半导体器件的光刻工艺中提供施加到半导体衬底上的高能量辐射抗蚀剂的下层膜，其用于防止反射，静电带电和显影缺陷，并且在抗蚀剂层的曝光期间抑制除气 高能辐射。 一种用于形成高能量辐射抗蚀剂的下层膜的组合物，该组合物包含具有芳环结构或杂环结构的膜组分。 具有芳环结构或杂环结构的膜组分优选以5-85质量％的比例包含在膜中。 膜组分可以是具有芳环结构或杂环结构的化合物，并且该化合物可以是包含特定重复单元的聚合物或聚合物前体。 芳环可以是苯环或稠合苯环，杂环结构可以是三嗪三酮环。

公开(公告)号：US09240327B2

公开(公告)日：2016-01-19

申请号：US14236719

申请日：2012-07-31

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

IPC分类号： G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  C08G73/06 ,  G03F7/09

CPC分类号： H01L21/3081 ,  C08G73/06 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/3086

摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法 用于EUV光刻的抗蚀剂下层膜组合物。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基 ，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。

公开(公告)号：US20130209940A1

公开(公告)日：2013-08-15

申请号：US13880470

申请日：2011-09-15

申请人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

发明人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

IPC分类号： C09D5/00

CPC分类号： C09D5/00 ,  C08F12/24 ,  C08G8/08 ,  C08G8/24 ,  C08L61/06 ,  C09D161/06 ,  G03F7/091 ,  G03F7/11 ,  C08F212/32 ,  C08F212/14 ,  C08F220/06

摘要： There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

摘要翻译： 提供了用于形成EUV抗蚀剂覆盖膜的组合物，其用于EUV光刻工艺中，其不与EUV抗蚀剂混合，其阻挡用于EUV曝光的不利曝光光，例如UV光和DUV光，并选择性透射 EUV灯单独使用，并且可以在曝光后用显影剂开发。 用于形成EUV抗蚀剂覆盖膜的组合物，其用于EUV光刻工艺，其包括在主链或侧链中含有萘环的树脂和溶剂，其中所述树脂可以包括羟基，羧基， 或这些基团中的至少一个作为亲水基团的一价有机基团。

公开(公告)号：US10437150B2

公开(公告)日：2019-10-08

申请号：US13131474

申请日：2009-11-19

申请人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

发明人： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

IPC分类号： G03F7/09

摘要： Underlayer films of high-energy radiation resists applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation are prepared from compositions including a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.

公开(公告)号：US20140170567A1

公开(公告)日：2014-06-19

申请号：US14236719

申请日：2012-07-31

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  C08G73/06 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/3086

摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法 用于EUV光刻的抗蚀剂下层膜组合物。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基 ，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。

公开(公告)号：US20120040291A1

公开(公告)日：2012-02-16

申请号：US13264234

申请日：2010-04-15

申请人： Rikimaru Sakamoto ,  Takafumi Endo ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Takafumi Endo ,  Bangching Ho

IPC分类号： H01L21/77 ,  B05D3/02 ,  G03F7/26 ,  B05D5/00 ,  C08G8/36 ,  C08G8/32

CPC分类号： H01L21/31116 ,  C08G59/08 ,  C08L63/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/3081 ,  Y10S430/106

摘要： There is provided a compositions of resist underlayer films for EUV lithography that is used in a production process of devices employing EUV lithography, that reduces adverse effects caused by EUV, and that has a beneficial effect on the formation of a favorable resist pattern; and a method for forming resist patterns using the composition of resist underlayer films for EUV lithography. A composition for forming a resist underlayer film for an EUV lithography process used in production of a semiconductor device, comprising a novolac resin containing a halogen atom. The novolac resin may include a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination thereof. The halogen atom may be a bromine atom or an iodine atom. The novolac resin may be a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid; or a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid.

摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜的组合物，其用于使用EUV光刻的器件的生产过程中，其减少由EUV引起的不利影响，并且对形成良好的抗蚀剂图案具有有益的影响; 以及使用EUV光刻用抗蚀剂下层膜的组合物形成抗蚀剂图案的方法。 一种用于形成用于生产半导体器件的EUV光刻工艺的抗蚀剂下层膜的组合物，其包含含有卤素原子的酚醛清漆树脂。 酚醛清漆树脂可以包括由环氧基，羟基或其组合构成的可交联基团。 卤素原子可以是溴原子或碘原子。 酚醛清漆树脂可以是酚醛清漆树脂或环氧化酚醛清漆树脂与卤代苯甲酸的反应产物; 或缩水甘油氧基酚醛清漆树脂与二碘水杨酸的反应产物。