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公开(公告)号：US4485352A
公开(公告)日：1984-11-27
申请号：US413052
申请日：1982-08-30
CPC分类号： H03F3/343
摘要： A current amplifier uses a current mirror arrangement as an operational amplifier whose output has limited swing. The limited swing is achieved through a plurality of series connected diodes connected to a control input of the amplifier and to the output of the operational amplifier. The control input is coupled through a transistor to inhibit the output of the current mirror arrangement. The output node is coupled to an output for the current amplifier through a Darlington arrangement which provides high current gain.
摘要翻译： 电流放大器使用电流镜布置作为输出具有有限摆幅的运算放大器。 通过连接到放大器的控制输入和运算放大器的输出的多个串联连接的二极管实现有限的摆幅。 控制输入通过晶体管耦合以阻止电流镜布置的输出。 输出节点通过提供高电流增益的达林顿配置耦合到电流放大器的输出端。
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公开(公告)号：US4554464A
公开(公告)日：1985-11-19
申请号：US413051
申请日：1982-08-30
申请人： Robert B. Davies , Ira Miller , Robert N. Dotson
发明人： Robert B. Davies , Ira Miller , Robert N. Dotson
摘要： A propagation delay generator is provided for controlling the duration of a bubble generate waveform of a bubble memory system. A first means is responsive to a digital input signal and provides an initializing signal to a current source. A capacitor is charged, responsive to an R-C time constant, by an increased voltage level prompted by the initializing signal. A second means is responsive to the charging signal in excess of that required to charge the capacitor. The second means thereby provides a digital output that is delayed from the digital input signal.
摘要翻译： 提供传播延迟发生器用于控制气泡存储系统的气泡产生波形的持续时间。 第一装置响应于数字输入信号并且向当前源提供初始化信号。 响应于R-C时间常数，电容器被由初始化信号提示的增加的电压电平充电。 第二装置响应于超过对电容器充电所需的充电信号。 因此，第二装置提供从数字输入信号延迟的数字输出。
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公开(公告)号：US4514648A
公开(公告)日：1985-04-30
申请号：US412057
申请日：1982-08-27
申请人： Robert N. Dotson , Robert B. Davies , Ira Miller
发明人： Robert N. Dotson , Robert B. Davies , Ira Miller
IPC分类号： H03K17/082 , H03K17/64 , H03K5/153 , H03K5/24 , H03K17/08
CPC分类号： H03K17/0826 , H03K17/64
摘要： In a voltage boost circuit for use in conjunction with a bubble memory operational driver, an output transistor is alternately turned on and off. When turned on, current flows through an inductor. When turned off, a high voltage is built up across the inductor which causes charge to be transferred to and stored in a capacitor. When the output transistor is turned on so as to permit current to flow through the inductor, a .DELTA.V.sub.BE /R current representative of the current flowing through the output transistor is compared with a .DELTA.V.sub.BE /R reference current. When the first current reaches and exceeds the reference current, the output transistor is turned off.
摘要翻译： 在与气泡存储器操作驱动器一起使用的升压电路中，输出晶体管交替地导通和截止。 导通时，电流流经电感。 当关闭时，在电感器上建立高电压，这将导致电荷被转移并存储在电容器中。 当输出晶体管导通以允许电流流过电感器时，将代表流过输出晶体管的电流的DELTA VBE / R电流与DELTA VBE / R参考电流进行比较。 当第一电流达到并超过参考电流时，输出晶体管截止。
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公开(公告)号：US4504928A
公开(公告)日：1985-03-12
申请号：US413050
申请日：1982-08-30
申请人： Robert B. Davies , Ira Miller , Robert N. Dotson
发明人： Robert B. Davies , Ira Miller , Robert N. Dotson
CPC分类号： G11C19/0858
摘要： A current ramp generator is provided for controlling the fall time of a bubble generate waveform of a bubble memory system. Gate circuitry is responsive to a digital input signal and provides an initializing signal to a current source. The current source charges a capacitor and thereby provides an increasing signal to a current mirror whose output sinks current from a control amplifier of the bubble memory system.
摘要翻译： 提供电流斜坡发生器用于控制气泡存储系统的气泡产生波形的下降时间。 门电路响应于数字输入信号并向电流源提供初始化信号。 电流源对电容器充电，从而向电流镜提供增加的信号，电流镜的输出从气泡存储器系统的控制放大器吸收电流。
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公开(公告)号：US4461989A
公开(公告)日：1984-07-24
申请号：US412069
申请日：1982-08-27
申请人： Robert N. Dotson , Robert B. Davies , Ira Miller
发明人： Robert N. Dotson , Robert B. Davies , Ira Miller
CPC分类号： G11C5/145
摘要： In a voltage boost circuit for use in conjunction with a bubble memory operational driver, an output transistor alternately turns on and off so as to permit current to flow through an inductor which, when terminated by turning off the output transistor, causes a high voltage to be built up across the inductor which causes charge to be transferred to and stored in a capacitor. The output transistor is not turned on again until the voltage across the inductor falls below a predetermined value. A current mirror circuit is coupled to the comparator input and includes a buffer transistor which, when the voltage at the comparator input exceeds the break-down voltage of the buffer transistor, acts as a BV.sub.ceo level shifter.
摘要翻译： 在与气泡存储器操作驱动器结合使用的升压电路中，输出晶体管交替地导通和截止，以允许电流流过电感器，当通过关断输出晶体管而终止时，电感引起高电压 在整个电感上形成电荷，使电荷转移并存储在电容器中。 直到电感两端的电压下降到预定值以下，输出晶体管才再次导通。 电流镜电路耦合到比较器输入，并且包括缓冲晶体管，当比较器输入端的电压超过缓冲晶体管的击穿电压时，缓冲晶体管充当BVceo电平移位器。
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公开(公告)号：US4485319A
公开(公告)日：1984-11-27
申请号：US352989
申请日：1982-02-26
申请人： Robert B. Davies , Robert N. Dotson , Ira Miller
发明人： Robert B. Davies , Robert N. Dotson , Ira Miller
CPC分类号： G11C19/0866 , G11C7/06 , H03K5/02 , H03K5/24
摘要： A sense amplifier which is fully integrated has an on-chip voltage regulator to provide essentially error free operation. The sense amplifier provides peak-to-peak signal detection for comparison to a threshold voltage by a comparator. The output of the comparator is coupled to an RS flip-flop. The output of the RS flip-flop is coupled to a D flip-flop. The use of an RS flip-flop as well as a D flip-flop eliminates clocking problems caused by skewing and keeps a stored detected signal from changing prematurely.
摘要翻译： 完全集成的读出放大器具有片上稳压器，可实质提供无差错的操作。 读出放大器提供峰 - 峰信号检测，以便通过比较器与阈值电压进行比较。 比较器的输出耦合到RS触发器。 RS触发器的输出耦合到D触发器。 使用RS触发器和D触发器可以消除由偏移引起的时钟问题，并保持存储的检测信号过早变化。
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公开(公告)号：US4476429A
公开(公告)日：1984-10-09
申请号：US412070
申请日：1982-08-27
申请人： Ira Miller , Robert N. Dotson , Robert B. Davies
发明人： Ira Miller , Robert N. Dotson , Robert B. Davies
CPC分类号： G11C19/0858 , G11C19/085 , H03K17/64 , H03K5/08
摘要： A circuit for providing the gate of a bubble memory with a precision current pulse at a high voltage is manufactured using a low voltage process; i.e. BV.sub.ceo is approximately 18 volts. In order to accomplish this, first and second voltage level shifting stages are cascoded and the output transistors thereof are used as Zener level shifters each level shifting downward by a BV.sub.ceo when only a small voltage is dropped across the load. If the voltage drop across the load increases, the cascoded output transistors may enter their active region and are prevented from going into saturation by saturation clamps so as to not introduce unwanted delays in the rise or fall times of the current pulse.
摘要翻译： 使用低电压工艺制造用于以高电压提供具有精密电流脉冲的气泡存储器的栅极的电路; 即BVceo约为18伏特。 为了实现这一点，第一和第二电压电平移位级被级联，并且其输出晶体管被用作齐纳电平移位器，当只有小的电压在负载上下降时，每个电平向下移位BVceo。 如果跨越负载的电压降增加，则级联输出晶体管可能进入其有源区，并且通过饱和钳位阻止其进入饱和，从而不会在电流脉冲的上升或下降时间引入不必要的延迟。
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公开(公告)号：US07584567B1
公开(公告)日：2009-09-08
申请号：US12110304
申请日：2008-04-26
申请人： Frank DeSomma , Robert B. Davies
发明人： Frank DeSomma , Robert B. Davies
IPC分类号： F41C23/16
CPC分类号： F41G11/003 , F41C23/16
摘要： A hand guard assembly for a firearm including a barrel. The assembly includes a tubular unitary body mounted to surround a portion of the barrel substantially coaxially and in a transversely spaced relationship. The tubular body includes a plurality of air flow openings formed therethrough and at least one of a top rail formed as a unitary portion of the tubular body and extending rearwardly along an upper portion of a receiver of the firearm, side accessory rails formed as a unitary portion of the tubular body and on opposed sides of the tubular body, and a bottom accessory rail formed as a unitary portion of the tubular body and on a bottom surface of the tubular body. In the preferred method of fabricating the assembly, the body and any include accessory rails are extruded.
摘要翻译： 用于包括枪管的枪支的护手组件。 该组件包括一个管状整体，其安装成围绕筒的一部分基本同轴并以横向间隔的关系。 管状体包括多个通过其形成的空气流动开口，以及形成为管状体的整体部分的顶部轨道中的至少一个，并且沿着枪械的接收器的上部向后延伸，侧部辅助导轨形成为整体 管状体的一部分和管状体的相对侧，以及形成为管状体的整体部分和管状体的底表面的底部辅助轨道。 在制造组件的优选方法中，主体和任何包括的附件轨道被挤压。
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公开(公告)号：US20080265313A1
公开(公告)日：2008-10-30
申请号：US12131295
申请日：2008-06-02
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/26586 , H01L21/2815 , H01L29/0878 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/66719 , H01L29/66727
摘要： In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.
摘要翻译： 在一个实施例中，半导体器件形成在半导体材料体中。 半导体器件包括在操作期间电流离开的沟道区域的一部分附近的局部化掺杂区域。
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公开(公告)号：US07397084B2
公开(公告)日：2008-07-08
申请号：US11095136
申请日：2005-04-01
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/26586 , H01L21/2815 , H01L29/0878 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/66719 , H01L29/66727
摘要： In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.
摘要翻译： 在一个实施例中，半导体器件形成在半导体材料体中。 半导体器件包括在操作期间电流离开的沟道区域的一部分附近的局部化掺杂区域。
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