Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers
    1.
    发明授权
    Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers 失效
    用于处理和转移半导体晶片的多个独立的机器人组件和设备

    公开(公告)号:US06799939B2

    公开(公告)日:2004-10-05

    申请号:US10378864

    申请日:2003-03-05

    IPC分类号: B66F1100

    摘要: A robot assembly including multiple independently operable robot assemblies are provided for use in semiconductor wafer processing. The robot assembly includes independent co-axial upper and lower robot assemblies adapted to handle multiple objects. The upper robot is stacked above the lower robot and the two robots are mounted concentrically to allow fast wafer transfer. Concentric drive mechanisms may also be provided for imparting rotary motion to either rotate the robot assembly or extend an extendable arm assembly into an adjacent chamber. Each robot can be either a single blade robot or a dual blade robot. Also provided is an apparatus for processing semiconductor wafers comprising a pre/post process transfer chamber housing multiple independent robot assemblies and surrounded by a plurality of pre-process chambers and post process chambers. Within each process, pre-process and post-process chamber is an apparatus for holding a plurality of stacked wafers. The apparatus includes a wafer lifting and storing apparatus exhibiting a plurality of vertically movable lift pins surrounding the chamber pedestal. The lift pins are configured to receive and hold a plurality of stacked wafers, preferably two, therein.

    摘要翻译: 提供了包括多个可独立操作的机器人组件的机器人组件,用于半导体晶片处理。 机器人组件包括适于处理多个物体的独立的同轴上下机器人组件。 上部机器人堆叠在下部机器人的上方,两个机器人同心安装以允许快速的晶片传送。 也可以提供同心驱动机构用于赋予旋转运动以旋转机器人组件或将可伸展臂组件延伸到相邻的腔室中。 每个机器人可以是单刀片机器人或双刀片机器人。 还提供了一种用于处理半导体晶片的装置,其包括容纳多个独立机器人组件并被多个预处理室和后处理室包围的前/后处理转移室。 在每个过程中,预处理室和后处理室是用于保持多个堆叠的晶片的装置。 该装置包括晶片提升和存储装置,其显示围绕室底座的多个可垂直移动的提升销。 提升销被配置为在其中接收和保持多个堆叠的晶片,优选地两个。

    Multiple independent robot assembly and apparatus for processing and
transferring semiconductor wafers

    公开(公告)号:US6102164A

    公开(公告)日:2000-08-15

    申请号:US608237

    申请日:1996-02-28

    摘要: A robot assembly including multiple independently operable robot assemblies are provided for use in semiconductor wafer processing. The robot assembly includes independent co-axial upper and lower robot assemblies adapted to handle multiple objects. The upper robot is stacked above the lower robot and the two robots are mounted concentrically to allow fast wafer transfer. Concentric drive mechanisms may also be provided for imparting rotary motion to either rotate the robot assembly or extend an extendable arm assembly into an adjacent chamber. Each robot can be either a single blade robot or a dual blade robot. Also provided is an apparatus for processing semiconductor wafers comprising a pre/post process transfer chamber housing multiple independent robot assemblies and surrounded by a plurality of pre-process chambers and post process chambers. Within each process, pre-process and post-process chamber is an apparatus for holding a plurality of stacked wafers. The apparatus includes a wafer lifting and storing apparatus exhibiting a plurality of vertically movable lift pins surrounding the chamber pedestal. The lift pins are configured to receive and hold a plurality of stacked wafers, preferably two, therein.

    Slotted RF coil shield for plasma deposition system
    4.
    发明授权
    Slotted RF coil shield for plasma deposition system 失效
    用于等离子体沉积系统的开槽RF线圈屏蔽

    公开(公告)号:US5763851A

    公开(公告)日:1998-06-09

    申请号:US676599

    申请日:1996-07-03

    IPC分类号: H01J37/32 B23K10/00

    摘要: A coil shield assembly for an RF field coil in a plasma processing system includes a first shield positioned inside the coil. The first shield has a central opening substantially surrounding a central space of a processing chamber in which the plasma is maintained. At least one slot is formed in the first shield and extends therethrough. A barrier is positioned between the first shield and the coil and spaced apart from the first shield near the at least one slot. The slot permits an RF signal from the coil to couple with the plasma, and the first shield and the barrier are structured and arranged to prevent plasma ions or sputtered material from bombarding the coil by a direct path from the central space and through the at least one slot.

    摘要翻译: 用于等离子体处理系统中的RF场线圈的线圈屏蔽组件包括位于线圈内部的第一屏蔽件。 第一屏蔽件具有基本上围绕处理室的中心空间的中心开口,其中维持等离子体。 在第一屏蔽件中形成至少一个槽,并延伸穿过其中。 屏障位于第一屏蔽和线圈之间,并且在靠近至少一个槽的位置处与第一屏蔽隔开。 该槽允许来自线圈的RF信号与等离子体耦合,并且第一屏蔽和屏障被构造和布置成防止等离子体离子或溅射材料通过从中心空间的直接路径至少通过至少 一个槽

    PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW
    5.
    发明申请
    PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW 失效
    加气室配置均匀气体流量

    公开(公告)号:US20070044719A1

    公开(公告)日:2007-03-01

    申请号:US11552727

    申请日:2006-10-25

    IPC分类号: H01L21/306 C23C16/00

    摘要: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

    摘要翻译: 提供了一种在处理室中进行均匀气体流动的装置和方法。 在一个实施例中,一种装置是一种边缘环,其包括具有从其突出的环形密封件的环形主体。 密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。 在另一个实施例中,提供了一种处理系统,其包括室主体,盖,衬底支撑件和多个流量控制孔。 盖子设置在室主体上并且与其限定内部容积。 衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。 流量控制孔布置在基板支撑件和盖子之间。 流量控制孔适于控制离开处理区域的气体流。

    High aspect ratio clamp ring
    6.
    发明授权
    High aspect ratio clamp ring 失效
    高长宽比夹环

    公开(公告)号:US5810931A

    公开(公告)日:1998-09-22

    申请号:US692932

    申请日:1996-07-30

    CPC分类号: H01L21/68721

    摘要: The present invention provides a method and apparatus for protecting the edge of a substrate and securing the substrate to the support member during processing. The present invention preferably provides minimal contact with the substrate and provides improved edge exclusion. Support tabs extend inwardly from the lower roof surface to support the apparatus on the substrate and the inner terminus of the apparatus approaches the edge of the substrate to provide the improved edge exclusion. A variable height lower roof surface is provided over the edge of the substrate to provide an effective increased roof aspect ratio (width of the roof:height of the roof above the substrate) over the edge of the substrate which reduces the likelihood that a bridging layer will form between the apparatus and the substrate or beyond the substrate.

    摘要翻译: 本发明提供了一种用于在加工过程中保护基板的边缘并将基板固定到支撑部件上的方法和装置。 本发明优选提供与基底的最小接触并提供改进的边缘排除。 支撑片从下屋顶表面向内延伸以支撑衬底上的装置,并且装置的内端靠近衬底的边缘以提供改进的边缘排除。 在衬底的边缘上设置可变的高度较低的屋顶表面,以在衬底的边缘上提供有效增加的屋顶纵横比(屋顶的宽度:衬底上方的屋顶的高度),这降低了桥接层 将在该设备和该基板之间或超过该基板之间形成。

    Apparatus and method for fabricating metal paths in semiconductor
substrates through high pressure extrusion
    9.
    发明授权
    Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion 失效
    用于通过高压挤压在半导体衬底中制造金属路径的装置和方法

    公开(公告)号:US5857368A

    公开(公告)日:1999-01-12

    申请号:US561614

    申请日:1995-11-21

    IPC分类号: H01L21/00 B21D26/02

    CPC分类号: H01L21/67126 Y10T29/49993

    摘要: A high pressure metallization apparatus provides a chamber for enclosing or enveloping a substrate in a high pressure environment, and thereby extrude a film layer into any voids in the covers holes or trenches thereon. The high pressure is maintained in a pressure chamber, which is substantially enclosed within a vacuum chamber. The apparatus includes a positioning member which relatively rigidly positions the pressure chamber plugs during high pressure operations, and also allows separation of the plugs to enable pressure chamber access. The apparatus is configured for relatively rapid access to the internal components thereof, for rapid service and cleaning turnaround. Additionally, the chamber is configured to have minimal relative movement between the structural elements thereof, to reduce particle generation in the apparatus.

    摘要翻译: 高压金属化装置提供用于在高压环境中包封或包封衬底的室,从而将膜层挤压到其上的覆盖孔或沟槽中的任何空隙中。 高压保持在压力室中,该压力室基本上封闭在真空室内。 该装置包括定位构件,该定位构件在高压操作期间相对刚性地定位压力腔塞,并且还允许分离塞以使压力室进入。 该装置被配置为相对快速地访问其内部组件,以用于快速的服务和清洁周转。 另外,腔室被构造成在其结构元件之间具有最小的相对运动,以减少装置中的颗粒产生。