Abstract:
A micromechanical device, in particular a micromirror device. The device has at least one first micromechanical component and one second micromechanical component. The first component and the second component are directly or indirectly joined to one another. The first micromechanical component has a first sub-body and at least one second sub-body. The first sub-body extends in a first plane and the second sub-body in a second plane different from the first plane. The first plane and the second plane extend parallel to one another and the first plane extends above the second plane. The second sub-body is arranged in a transitional region to the second micromechanical component. A second extent of the second sub-body in the longitudinal direction is greater than a first extent of the first sub-body in the longitudinal direction.
Abstract:
A micromechanical oscillation system that is designed as a micromirror system. The micromechanical oscillation system includes a micromechanical oscillating body that includes at least one micromirror. The micromechanical oscillating body is designed to oscillate about an oscillation axis, in particular at a resonant frequency of the oscillating body. The micromechanical oscillating body has a total mass made up of mass elements. The mass elements are distributed as a function of a lateral horizontal spacing of the mass elements from the oscillation axis.
Abstract:
A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times τ1 and τ2, and generate the maximum changes in barrier height δΦ1 and δΦ2 at the electrodes. τ1 and δΦ1 are associated with the first defect type, and τ2 and δΦ2 are associated with the second defect type. τ1
Abstract:
A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.
Abstract:
A micromechanical component. The micromechanical component includes: a mount; a displaceable part; and a first serpentine spring and a second serpentine spring which is embodied mirror-symmetrically with respect to the first serpentine spring in terms of a first plane of symmetry; a first actuator device and a second actuator device being embodied in such a way that by way of the first actuator device and the second actuator device, periodic deformations, mirror-symmetrical in terms of the first plane of symmetry, of the first serpentine spring and of the second serpentine spring are excitable; the micromechanical component also encompassing a first torsion spring and a second torsion spring that each extend along a rotation axis; and the displaceable part being displaceable, at least by way of the periodic and mirror-symmetrical deformations of the first serpentine spring and of the second serpentine spring, around the rotation axis with respect to the mount.
Abstract:
A sensor apparatus having at least one magnet core, on at least one carrier surface, which encompasses at least one soft magnetic material and for which a respective longitudinal center plane, which is oriented perpendicularly to the carrier surface and divides the respective magnet core into two halves having an identical mass, is definable, at least one coil being on, around, and/or adjacent to the at least one magnet core, the at least one magnet core having in its interior sub-regions by which an initiation of a magnetization reversal of the respective magnet core is targetedly locally controllable since a drive energy to be applied for propagation of a magnetic domain wall is elevated. Also described is a manufacturing method for a sensor apparatus having at least one magnet core, and a method for ascertaining a field strength of a magnetic field in at least one spatial direction.
Abstract:
A telecommunication unit is provided, having a projection device for projecting image information onto a projection area located outside the telecommunication unit, the telecommunication unit being configured so that the projection device projects the image information in various first directions of a projection direction range onto the projection area, starting from the telecommunication unit. The telecommunication unit has an input detection device next to the projection device; the telecommunication unit being further configured so that, using the input detection device, a user input undertaken using a movement of a body part of a user is detectable; the user input taking place, starting from the telecommunication unit, in a detection direction range located outside the projection direction range; the user input being contactless with respect to the telecommunication unit.
Abstract:
A telecommunication unit is provided, having a projection device for projecting image information onto a projection area located outside the telecommunication unit, the telecommunication unit being configured so that the projection device projects the image information in various first directions of a projection direction range onto the projection area, starting from the telecommunication unit. The telecommunication unit has an input detection device next to the projection device; the telecommunication unit being further configured so that, using the input detection device, a user input undertaken using a movement of a body part of a user is detectable; the user input taking place, starting from the telecommunication unit, in a detection direction range located outside the projection direction range; the user input being contactless with respect to the telecommunication unit.
Abstract:
An apparatus and a method for monitoring a semiconductor component. A leakage current which flows through a first electrode and a second electrode of the semiconductor component is detected during operation of the semiconductor component, wherein the leakage current is compared, during a comparison, with a first limit value for the leakage current and an output is determined on the basis of a result of the comparison and/or wherein a time is determined at which an extreme point, in particular a maximum, of the leakage current occurs and an output is determined on the basis of the time, wherein the output comprises a state of the semiconductor component, and the output is output.
Abstract:
A magnetoelastic torque sensor having an evaluation unit and at least three magnetic field sensors. The evaluation unit acquires at least one measurement signal of a first magnetic field sensor, at least one measurement signal of a second magnetic field sensor and at least one third measurement signal of a third magnetic field sensor of the magnetoelastic torque sensor, and to determine a torque exerted on the shaft using the at least one measurement signal of the first magnetic field sensor, the at least one measurement signal of the second magnetic field sensor, the at least one measurement signal of the fourth magnetic field sensor, and a ratio of a distance between the second magnetic field sensor and the third magnetic field sensor in an axial direction to a distance between the first magnetic field sensor and the second magnetic field sensor in the axial direction.