公开(公告)号：US20090258186A1

公开(公告)日：2009-10-15

申请号：US12101066

申请日：2008-04-10

申请人： Robert E. Fontana, JR. ,  Jordan Asher Katine ,  Neil Leslie Robertson ,  Barry Cushing Stipe ,  Timothy Carl Strand ,  Bruce David Terris

发明人： Robert E. Fontana, JR. ,  Jordan Asher Katine ,  Neil Leslie Robertson ,  Barry Cushing Stipe ,  Timothy Carl Strand ,  Bruce David Terris

IPC分类号： G03F7/00 ,  B32B3/10

CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  G11B2005/0021 ,  Y10T428/24273

摘要： A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface.

摘要翻译： 用于形成用于热辅助记录（TAR）盘驱动器中的多个滑动件的方法包括在将晶片切割成晶片之前在晶片表面上形成多个孔结构和可选地邻接的光通道的晶片级工艺 个人滑块 晶片具有布置成多个矩形区域的大致平坦的表面。 在每个矩形区域中，第一金属层沉积在晶片表面上，随后是一层辐射透射的孔隙材料，然后将其光刻图案化以限定孔的宽度，孔的宽度平行于矩形的长度 形状区域。 在孔材料的图案化层上沉积第二金属层。 然后将所得结构光刻图案化以限定孔结构，该孔结构包括由金属包围并具有与晶片表面正交的平行辐射入射面和出射面的孔隙材料。

公开(公告)号：US20090290454A1

公开(公告)日：2009-11-26

申请号：US12154517

申请日：2008-05-22

申请人： Robert E. Fontana, JR. ,  James Terrence Olson ,  Barry Cushing Stipe ,  Timothy Carl Strand

发明人： Robert E. Fontana, JR. ,  James Terrence Olson ,  Barry Cushing Stipe ,  Timothy Carl Strand

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B2005/0021

摘要： A write head structure for perpendicular recording having a pole tip integrated into the metal film surrounding a C aperture near field light source is disclosed. The close proximity of the pole tip to the light source enables more precise location of data cells written into the magnetic media, through the use of dual gradient thermally assisted recording. In dual gradient recording, data is fixed by the effect of both a thermal gradient, which affects the coercivity of the magnetic media, combined with a magnetic field gradient imposed by the pole tip.

摘要翻译： 公开了一种用于垂直记录的写入头结构，其具有集成在围绕C光阑近场光源的金属膜中的极尖。 通过使用双梯度热辅助记录，磁极尖端与光源的紧密接近使得能够更精确地写入磁介质中的数据单元。 在双梯度记录中，数据通过影响磁性介质的矫顽力的热梯度和磁极尖所施加的磁场梯度的结合来影响。

公开(公告)号：US20090190269A1

公开(公告)日：2009-07-30

申请号：US12021085

申请日：2008-01-28

申请人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

发明人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/08 ,  H01L43/12

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

摘要翻译： 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。

公开(公告)号：US20130106552A1

公开(公告)日：2013-05-02

申请号：US13287942

申请日：2011-11-02

申请人： Robert E. Fontana, JR. ,  William J. Gallagher ,  Philipp Herget ,  Eugene J. O'Sullivan ,  Naigang Wang ,  Bucknell C. Webb

发明人： Robert E. Fontana, JR. ,  William J. Gallagher ,  Philipp Herget ,  Eugene J. O'Sullivan ,  Naigang Wang ,  Bucknell C. Webb

IPC分类号： H01F5/00 ,  H01F5/06

CPC分类号： H01F17/0013 ,  H01F2017/0066

摘要： A thin film inductor according to one embodiment includes a bottom yoke; a first insulating layer above the bottom yoke; one or more conductors above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the one or more conductors; a third insulating layer above the second insulating layer; and a top yoke above the third insulating layer. A thin film inductor according to another embodiment includes a bottom yoke; a first insulating layer above the bottom yoke, the first insulating layer being polymeric; one or more conductors above the bottom yoke and separated therefrom by the first insulating layer; an upper insulating layer above the one or more conductors, the upper insulating layer being polymeric; and a top yoke above the second insulating layer.

摘要翻译： 根据一个实施例的薄膜电感器包括底部轭; 在底部轭上方的第一绝缘层; 一个或多个导体，位于底部磁轭之上并与第一绝缘层分离; 一个或多个导体上方的第二绝缘层; 在所述第二绝缘层上方的第三绝缘层; 以及在第三绝缘层上方的顶部磁轭。 根据另一实施例的薄膜电感器包括底部轭; 在所述底部磁轭上方的第一绝缘层，所述第一绝缘层是聚合物; 一个或多个导体，位于底部磁轭之上并与第一绝缘层分离; 在一个或多个导体上方的上绝缘层，上绝缘层是聚合物; 以及在所述第二绝缘层上方的顶部磁轭。

公开(公告)号：US20090161262A1

公开(公告)日：2009-06-25

申请号：US12004235

申请日：2007-12-20

申请人： Jeffrey R. Childress ,  Robert E. Fontana, JR. ,  Jui-Lung Li ,  Sergio Nicoletti

发明人： Jeffrey R. Childress ,  Robert E. Fontana, JR. ,  Jui-Lung Li ,  Sergio Nicoletti

IPC分类号： G11B5/33 ,  H01L21/00 ,  H01L29/82

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/33 ,  G11B5/39

摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.

摘要翻译： 公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。 在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。 然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。 中心开口具有用于定义TTM的轨道宽度（TW）的宽度。 接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。 一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。 提供了各种实施例和技术。

公开(公告)号：US20120243125A1

公开(公告)日：2012-09-27

申请号：US13433192

申请日：2012-03-28

申请人： Thomas Robert Albrecht ,  Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

发明人： Thomas Robert Albrecht ,  Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

IPC分类号： G11B5/455 ,  G11B5/48

CPC分类号： G11B5/40

摘要： A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.

摘要翻译： 用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

公开(公告)号：US20100039849A1

公开(公告)日：2010-02-18

申请号：US12191956

申请日：2008-08-14

申请人： Robert E. Fontana, JR. ,  Jordan A. Katine ,  Ching Hwa Tsang ,  Barry Stipe ,  Bruce D. Terris

发明人： Robert E. Fontana, JR. ,  Jordan A. Katine ,  Ching Hwa Tsang ,  Barry Stipe ,  Bruce D. Terris

IPC分类号： G11C11/15 ,  G11C11/14 ,  G11C11/00 ,  H01L21/00

CPC分类号： G11C11/15 ,  G11C5/02 ,  G11C11/1675 ,  H01L27/228

摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.

摘要翻译： 公开了用于三维磁存储器的读/写元件。 一个实施例描述了集成读/写元件的阵列。 阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。 阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。 阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。 在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。 第一写入导体和第二写入导体在磁极周围形成电流环。

公开(公告)号：US20090154027A1

公开(公告)日：2009-06-18

申请号：US11957466

申请日：2007-12-16

申请人： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, JR. ,  Jordan A. Katine ,  Neil Smith

发明人： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, JR. ,  Jordan A. Katine ,  Neil Smith

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.

摘要翻译： 公开了传感器和相关的制造方法。 本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。 通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。 光圈的宽度控制注入到传感器叠层顶部的电流密度。 此外，可以形成硬偏置结构以电耦合到传感器堆叠。 传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

公开(公告)号：US20080310055A1

公开(公告)日：2008-12-18

申请号：US11763962

申请日：2007-06-15

申请人： Robert E. Fontana, JR. ,  Sergey Kiselev ,  Edward Hin Pong Lee ,  Kenneth Donald Mackay ,  Surya Narayan Pattanaik ,  Chie Ching Poon

发明人： Robert E. Fontana, JR. ,  Sergey Kiselev ,  Edward Hin Pong Lee ,  Kenneth Donald Mackay ,  Surya Narayan Pattanaik ,  Chie Ching Poon

IPC分类号： G11B5/33

CPC分类号： G11B5/40 ,  G11B5/4853

摘要： The present invention provides methods and systems for repeatably creating and severing a short circuit to protect an electronic component from ESD. A short circuit may be formed between read sensor pads of a read sensor by depositing a shorting material on a magnetic head using a Laser Induced Forward Transfer (LIFT) process. The short circuit may be unshorted using a laser scan configured to sever the shorting material. In one embodiment, a shorting station may be provided to prevent spreading of the shorting material to undesired areas of the electronic component.

摘要翻译： 本发明提供了用于重复地创建和切断短路以保护电子部件免受ESD的方法和系统。 通过使用激光诱导正转（LIFT）工艺将短路材料沉积在磁头上，可以在读取传感器的读取传感器焊盘之间形成短路。 可以使用配置为切断短路材料的激光扫描来对该短路进行未调整。 在一个实施例中，可以提供短路站以防止短路材料扩散到电子部件的不期望的区域。

公开(公告)号：US20130314192A1

公开(公告)日：2013-11-28

申请号：US13477978

申请日：2012-05-22

申请人： Robert E. Fontana, JR. ,  Philipp Herget ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Bucknell C. Webb

发明人： Robert E. Fontana, JR. ,  Philipp Herget ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Bucknell C. Webb

IPC分类号： H01F27/28

CPC分类号： H01F27/2804 ,  H01F5/00 ,  H01F17/0013 ,  H01F2017/0066 ,  H01F2017/0086 ,  H01F2027/2809 ,  H01L28/10

摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.

摘要翻译： 薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。 薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。