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1.发明授权Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法公开(公告)号：US08045298B2
公开(公告)日：2011-10-25
申请号：US12004235
申请日：2007-12-20
IPC分类号： G11B5/33
摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.
摘要翻译： 公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。 在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。 然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。 中心开口具有用于定义TTM的轨道宽度（TW）的宽度。 接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。 一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。 提供了各种实施例和技术。
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2.发明申请Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法公开(公告)号：US20090161262A1
公开(公告)日：2009-06-25
申请号：US12004235
申请日：2007-12-20
摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.
摘要翻译： 公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。 在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。 然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。 中心开口具有用于定义TTM的轨道宽度（TW）的宽度。 接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。 一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。 提供了各种实施例和技术。
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公开(公告)号：US20090154027A1
公开(公告)日：2009-06-18
申请号：US11957466
申请日：2007-12-16
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译： 公开了传感器和相关的制造方法。 本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。 通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。 光圈的宽度控制注入到传感器叠层顶部的电流密度。 此外，可以形成硬偏置结构以电耦合到传感器堆叠。 传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。
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4.发明授权Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译： 电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域 层又依赖于MTJ的附加层。 通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。 然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。
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5.发明授权CPP sensors with hard bias structures that shunt sense current towards a shield 有权具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流公开(公告)号：US08335056B2
公开(公告)日：2012-12-18
申请号：US11957466
申请日：2007-12-16
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译： 公开了传感器和相关的制造方法。 本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。 通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。 光圈的宽度控制注入到传感器叠层顶部的电流密度。 此外，可以形成硬偏置结构以电耦合到传感器堆叠。 传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。
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6.发明授权Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效具有叠层纵向偏置层结构的三端磁传感器公开(公告)号：US07639459B2
公开(公告)日：2009-12-29
申请号：US11032598
申请日：2005-01-10
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01L29/66984 , H01L43/08
摘要： In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
摘要翻译： 在一个说明性示例中，适用于磁头的三端磁传感器（TTM）具有包括基极区域，集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开，并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线，耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地，基区由自由层结构组成，以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层（LBL）结构与传感器堆叠结构堆叠形成，并且具有平行于TTM的感测平面的磁矩，用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分，其还包括半导体材料层。 在一个变型中，发射极区域具有叠层LBL结构，并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。
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7.发明授权Magnetic tunnel junction device with bottom free layer and improved underlayer 有权具有底部自由层和改进的底层的磁隧道连接装置公开(公告)号：US06847510B2
公开(公告)日：2005-01-25
申请号：US10256722
申请日：2002-09-27
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.
摘要翻译： 可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的 底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。 用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层 合金是反铁磁的。 添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。
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8.发明授权In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layer 有权用于具有与自由层电绝缘的偏置层的CIP自旋阀传感器的堆叠纵向偏置结构公开(公告)号：US06671139B2
公开(公告)日：2003-12-30
申请号：US10066067
申请日：2002-01-31
申请人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetization of a ferromagnetic free layer of a current-in-plane (CIP) sensor is stabilized using an in-stack longitudinal bias structure that includes a ferromagnetic bias layer and an anti-ferromagnetic bias layer. An electrically insulating layer separates the ferromagnetic free layer and the in-stack longitudinal bias structure, and thus the leads attached to the CIP sensor do not make direct electrical contact with the in-stack longitudinal bias structure. As a result, the sense current shunted by the in-stack longitudinal bias structure is prevented. Since a width along the off track direction of the in-stack longitudinal bias structure is greater than the track-width of the CIP sensor, the edge magnetostatic coupling filed acting on the ferromagnetic free layer from the track width edges of the in-stack longitudinal bias structure is reduced to approximately zero.
摘要翻译： 使用包括铁磁偏置层和反铁磁偏置层的堆叠内纵向偏置结构来稳定电流平面（CIP）传感器的铁磁自由层的磁化。 电绝缘层分离铁磁自由层和堆叠内纵向偏置结构，因此连接到CIP传感器的引线不与堆叠内纵向偏置结构直接电接触。 结果，防止了由堆叠内纵向偏置结构分流的感测电流。 由于沿着堆叠内纵向偏置结构的偏离轨道方向的宽度大于CIP传感器的轨道宽度，因此边缘静磁耦合场从堆叠纵向偏移结构的轨道宽度边缘起作用在铁磁自由层上 偏置结构减少到大约零。
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9.发明授权Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing 失效制造包含需要后沉积退火的铁磁合金的电流垂直平面（CPP）磁阻传感器的方法公开(公告)号：US08617644B2
公开(公告)日：2013-12-31
申请号：US13415808
申请日：2012-03-08
申请人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
发明人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
IPC分类号： G11B5/84
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.
摘要翻译： 在传感器的含Mn反铁磁性钉扎层上制造具有Heusler合金钉扎层的电流垂直于平面的巨磁电阻（CPP-GMR）传感器的方法采用两个退火步骤。 一层结晶的非Heusler合金铁磁材料，如Co或CoFe，沉积在反铁磁性钉扎层上，并且含有非晶态的含铁铁磁性合金如CoFeBTa层沉积在Co或CoFe晶体层上 。 在非晶态含铁铁磁性合金的第一次原位退火之后，将Heusler合金钉扎层沉积在含非晶态的铁磁性层上，并执行第二个高温退火步骤，以改善Heusler合金被钉扎的微结构 层。
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10.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon 有权电流垂直于平面（CPP）磁阻传感器，包含硅的反平行钉扎层公开(公告)号：US08014109B2
公开(公告)日：2011-09-06
申请号：US11867063
申请日：2007-10-04
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.
摘要翻译： 电流垂直平面（CPP）自旋阀（SV）磁阻传感器使用反平行（AP）钉扎结构，并且在AP钉扎结构的参考层中具有包含Co，Fe和Si的铁磁合金 并且可选地在CPP-SV传感器的自由层中。 参考层或AP2层是不含Si且与AP钉扎结构的反向平行耦合（APC）层接触的第一AP2-1子层的多层，以及含有Si的第二AP2-2子层 与CPP-SV传感器的间隔层接触。 含Si的合金基本上可以由下式（Co x Fe（100-x））（100-y）Si y的仅Co，Fe和Si组成，其中下标表示原子百分数，x在约45和55之间，y 在大约20到30之间。
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