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公开(公告)号：US4000508A
公开(公告)日：1976-12-28
申请号：US596890
申请日：1975-07-17
IPC分类号： H01L21/445 , H01L29/221 , H01L29/45 , H01L31/103 , H01L29/161 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L31/1032 , H01L21/445 , H01L24/05 , H01L29/221 , H01L29/45 , H01L2224/04042 , H01L2224/48463 , H01L2924/12043 , H01L2924/15747
摘要： Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.
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公开(公告)号：US4085500A
公开(公告)日：1978-04-25
申请号：US727814
申请日：1976-09-29
IPC分类号： H01L21/445 , H01L29/221 , H01L29/45 , H01L31/103 , B01J17/00
CPC分类号： H01L31/1032 , H01L21/445 , H01L24/05 , H01L29/221 , H01L29/45 , H01L2224/04042 , H01L2224/48463 , H01L2924/12043 , H01L2924/15747
摘要： Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.
摘要翻译： 通过在p型汞镉碲的表面上沉积柱状IB金属制备p型碲化镉碲的欧姆接触，在第1B栏金属上沉积缓冲材料，并将缓冲材料与粘结材料接触， 能够与IB柱金属合金化。 缓冲材料防止了柱IB金属和粘合材料之间的合金化。
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公开(公告)号：US3979232A
公开(公告)日：1976-09-07
申请号：US554294
申请日：1975-02-28
CPC分类号： C30B33/00 , C30B29/48 , Y10S148/064 , Y10S438/971
摘要： The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is heat treated in the presence of mercury and cadmium vapor.
摘要翻译： 通过热处理调节汞镉碲的化学计量和自由载流子浓度。 汞汞碲化镉在汞和镉蒸汽存在下进行热处理。
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公开(公告)号：US3963540A
公开(公告)日：1976-06-15
申请号：US554293
申请日：1975-02-28
CPC分类号： C01B19/007 , C30B29/48 , C30B33/00 , C01P2006/40 , Y10S438/971
摘要： The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is slowly cooled from a temperature near the solidus temperature to room temperature in the presence of constituent vapor. The mercury cadmium telluride is maintained at the lowest temperature within the capsule during cooling.
摘要翻译： 通过热处理调节汞镉碲的化学计量和自由载流子浓度。 在组成蒸气存在的情况下，将汞镉镉从接近固相线温度的温度缓慢冷却至室温。 在冷却期间，汞镉碲保持在胶囊内的最低温度。
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公开(公告)号：US3949223A
公开(公告)日：1976-04-06
申请号：US411970
申请日：1973-11-01
IPC分类号： H01L27/144 , H01L27/146 , H01L31/09 , H01L27/14
CPC分类号： H01L31/09 , H01L27/144 , H01L27/14669
摘要： A photoconductive detector array is formed in a single body of semiconductor material. The individual photoconductive detectors are formed by regions of first conductivity type. The bulk of the semiconductor body is of a second conductivity type, thereby electrically isolating the individual photoconductive detectors from one another. This detector array is easier to fabricate than prior art detector arrays, and has unique signal enhancement properties.
摘要翻译： 光电导检测器阵列形成在单体半导体材料中。 各个光电导检测器由第一导电类型的区域形成。 半导体本体的主体是第二导电类型，从而将各个光电导检测器彼此电隔离。 该检测器阵列比现有技术的检测器阵列更容易制造，并具有独特的信号增强特性。
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