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公开(公告)号：US08298449B2
公开(公告)日：2012-10-30
申请号：US12836150
申请日：2010-07-14
CPC分类号： H01B3/12 , C03C8/04 , C03C8/14 , C03C17/008 , C03C17/25 , C03C2217/23 , C04B35/453 , C04B35/6264 , C04B35/63 , C04B35/632 , C04B2235/3201 , C04B2235/3217 , C04B2235/3222 , C04B2235/3239 , C04B2235/3241 , C04B2235/327 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/658 , C04B2235/96 , C04B2235/9661 , H01B3/004 , H01B3/185 , H01C17/06533 , H01G4/1209 , H01J3/40 , H01J2229/882 , H01J2329/4691 , H01J2329/8615
摘要： This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.
摘要翻译： 本发明提供了一种电介质组合物，其包含可在空气中在约450℃至约550℃范围内的温度下燃烧的电介质和选自锑掺杂氧化锡，锡 - 掺杂的氧化铟，过渡金属氧化物，其具有混合的价态或将在氮气气氛中在约450℃至约550℃的温度下焙烧后形成混合的价态，并且通常导电的贵金属氧化物如 作为二氧化钌，其中存在的导电氧化物的量为介电和导电氧化物总重量的约0.25重量％至约25重量％。 该电介质组合物具有降低的电阻，并且可用于电子发射器件以消除电子发射器附近的电介质的充电和静电荷诱导的场发射的影响。
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公开(公告)号：US20110006271A1
公开(公告)日：2011-01-13
申请号：US12836150
申请日：2010-07-14
IPC分类号： H01B1/02
CPC分类号： H01B3/12 , C03C8/04 , C03C8/14 , C03C17/008 , C03C17/25 , C03C2217/23 , C04B35/453 , C04B35/6264 , C04B35/63 , C04B35/632 , C04B2235/3201 , C04B2235/3217 , C04B2235/3222 , C04B2235/3239 , C04B2235/3241 , C04B2235/327 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/658 , C04B2235/96 , C04B2235/9661 , H01B3/004 , H01B3/185 , H01C17/06533 , H01G4/1209 , H01J3/40 , H01J2229/882 , H01J2329/4691 , H01J2329/8615
摘要： This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.
摘要翻译： 本发明提供了一种电介质组合物，其包含可在空气中在约450℃至约550℃范围内的温度下燃烧的电介质和选自锑掺杂氧化锡，锡 - 掺杂的氧化铟，过渡金属氧化物，其具有混合的价态或将在氮气气氛中在约450℃至约550℃的温度下焙烧后形成混合的价态，并且通常导电的贵金属氧化物如 作为二氧化钌，其中存在的导电氧化物的量为介电和导电氧化物总重量的约0.25重量％至约25重量％。 该电介质组合物具有降低的电阻，并且可用于电子发射器件以消除电子发射器附近的电介质的充电和静电荷诱导的场发射的影响。
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公开(公告)号：US07763189B2
公开(公告)日：2010-07-27
申请号：US10475212
申请日：2002-05-14
CPC分类号： H01B3/12 , C03C8/04 , C03C8/14 , C03C17/008 , C03C17/25 , C03C2217/23 , C04B35/453 , C04B35/6264 , C04B35/63 , C04B35/632 , C04B2235/3201 , C04B2235/3217 , C04B2235/3222 , C04B2235/3239 , C04B2235/3241 , C04B2235/327 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/658 , C04B2235/96 , C04B2235/9661 , H01B3/004 , H01B3/185 , H01C17/06533 , H01G4/1209 , H01J3/40 , H01J2229/882 , H01J2329/4691 , H01J2329/8615
摘要： This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.
摘要翻译： 本发明提供了一种电介质组合物，其包含可在空气中在约450℃至约550℃范围内的温度下燃烧的电介质和选自锑掺杂氧化锡，锡 - 掺杂的氧化铟，过渡金属氧化物，其具有混合的价态或将在氮气气氛中在约450℃至约550℃的温度下焙烧后形成混合的价态，并且通常导电的贵金属氧化物如 作为二氧化钌，其中存在的导电氧化物的量为介电和导电氧化物总重量的约0.25重量％至约25重量％。 该电介质组合物具有降低的电阻，并且可用于电子发射器件以消除电子发射器附近的电介质的充电和静电荷诱导的场发射的影响。
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公开(公告)号：US08011990B2
公开(公告)日：2011-09-06
申请号：US11239309
申请日：2005-09-29
IPC分类号： B32B38/10
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
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公开(公告)号：US07449081B2
公开(公告)日：2008-11-11
申请号：US09882719
申请日：2001-06-15
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译： 本发明提供了一种改进由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质组成的电子场发射体的场发射的方法，包括向电子场发射体的表面施加力 其中所述力导致去除所述电子场发射体的一部分，从而形成所述电子场发射体的新表面。
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公开(公告)号：US07276844B2
公开(公告)日：2007-10-02
申请号：US11107006
申请日：2005-04-15
IPC分类号： H01J9/02
CPC分类号： B82Y10/00 , H01J1/3048 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译： 本发明提供了一种改进由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质组成的电子场发射体的场发射的方法，包括向电子场发射体的表面施加力 其中所述力导致去除所述电子场发射体的一部分，从而形成所述电子场发射体的新表面。
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公开(公告)号：US08070906B2
公开(公告)日：2011-12-06
申请号：US12174114
申请日：2008-07-16
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译： 本发明提供了一种改进由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质组成的电子场发射体的场发射的方法，包括向电子场发射体的表面施加力 其中所述力导致去除所述电子场发射体的一部分，从而形成所述电子场发射体的新表面。
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公开(公告)号：US20090104834A1
公开(公告)日：2009-04-23
申请号：US12258648
申请日：2008-10-27
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译： 本发明提供了一种改进由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质构成的电子场发射体的场发射的方法，包括向电子场发射体的表面施加力 其中所述力导致去除所述电子场发射体的一部分，从而形成所述电子场发射体的新表面。
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公开(公告)号：US08529798B2
公开(公告)日：2013-09-10
申请号：US12258648
申请日：2008-10-27
IPC分类号： H01B1/00
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译： 本发明提供了一种改进由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质组成的电子场发射体的场发射的方法，包括向电子场发射体的表面施加力 其中所述力导致去除所述电子场发射体的一部分，从而形成所述电子场发射体的新表面。
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公开(公告)号：US20080299864A1
公开(公告)日：2008-12-04
申请号：US12174114
申请日：2008-07-16
IPC分类号： H01J9/02
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译： 本发明提供了一种改进由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质组成的电子场发射体的场发射的方法，包括向电子场发射体的表面施加力 其中所述力导致去除所述电子场发射体的一部分，从而形成所述电子场发射体的新表面。
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