Method for producing thin films
    1.
    发明授权
    Method for producing thin films 失效
    薄膜制造方法

    公开(公告)号:US06676994B2

    公开(公告)日:2004-01-13

    申请号:US09819277

    申请日:2001-03-28

    IPC分类号: C23C1600

    摘要: Thin films are produced by a method wherein a material is heated in a furnace placed inside a vacuum system. An inert gas is flown over/through the heated material. The vapors of the material are entrained in the carrier gas which is then directed onto a substrate heated to a temperature below that of the furnace temperature and placed in close proximity to the exit of the furnace.

    摘要翻译: 通过一种方法制造薄膜,其中将材料在放置在真空系统内的炉中加热。 惰性气体流过/通过加热的材料。 材料的蒸气被夹带在载气中,然后将其引导到加热到低于炉温的温度的基底上,并放置在靠近炉的出口处。

    Nozzle-based, Vapor-phase, Plume Delivery Structure for Use in Production of Thin-film Deposition Layer
    2.
    发明申请
    Nozzle-based, Vapor-phase, Plume Delivery Structure for Use in Production of Thin-film Deposition Layer 审中-公开
    喷嘴为基础,蒸气相,用于生产薄膜沉积层的羽流输送结构

    公开(公告)号:US20120156372A1

    公开(公告)日:2012-06-21

    申请号:US13006086

    申请日:2011-01-13

    IPC分类号: C23C16/44

    摘要: A physical vapor deposition effusion method comprising translating a strip material through a physical vapor deposition zone in a deposition chamber and providing first and second substantially closed vessels located serially along the processing path in the same deposition chamber, each vessel emitting different source materials to produce overlapping plumes and having an array of vapor delivery nozzles distributed uniformly across the vessel along the width of the zone, and configured to expel overlapping plumes to create a fog having a substantially uniform composition across the width and a varying composition across the length of the zone. Also, an elongate vapor deposition effusion vessel having an elongate lid including plural nozzles spaced from each other along its elongate axis, and a continuous heating element in the lid encircling the plural nozzles, the heating element having electrical contacts connected to an electrical source on the same side of the vessel.

    摘要翻译: 一种物理气相沉积渗出方法,包括将条状材料平移通过沉积室中的物理气相沉积区,并提供沿同一沉积室中的处理路径串联设置的第一和第二基本上密封的容器,每个容器发射不同的源材料以产生重叠 羽流并且具有沿着该区域的宽度均匀地分布在该容器上的蒸气输送喷嘴的阵列,并且被配置为排出重叠的羽流以产生具有穿过该宽度的基本上均匀的组成的雾和跨越该区域长度的变化的组合。 另外,细长的气相沉积容器具有细长的盖子,其细长的盖子包括沿着其细长轴线彼此分开的多个喷嘴,以及围绕多个喷嘴的盖子中的连续的加热元件,加热元件具有电连接到电源 船的同一侧。

    Nozzle-Based, Vapor-Phase, Plume Delivery Structure for Use in Production of Thin-Film Deposition Layer
    3.
    发明申请
    Nozzle-Based, Vapor-Phase, Plume Delivery Structure for Use in Production of Thin-Film Deposition Layer 审中-公开
    喷嘴为基础,蒸气相,用于生产薄膜沉积层的羽流输送结构

    公开(公告)号:US20100173440A1

    公开(公告)日:2010-07-08

    申请号:US12466981

    申请日:2009-05-15

    IPC分类号: H01L31/18

    摘要: A physical vapor deposition effusion method comprising translating a strip material through a physical vapor deposition zone in a deposition chamber and providing first and second substantially closed vessels located serially along the processing path in the same deposition chamber, each vessel emitting different source materials to produce overlapping plumes and having an array of vapor delivery nozzles distributed uniformly across the vessel along the width of the zone, and configured to expel overlapping plumes to create a fog having a substantially uniform composition across the width and a varying composition across the length of the zone. Also, an elongate vapor deposition effusion vessel having an elongate lid including plural nozzles spaced from each other along its elongate axis, and a continuous heating element in the lid encircling the plural nozzles, the heating element having electrical contacts connected to an electrical source on the same side of the vessel.

    摘要翻译: 一种物理气相沉积渗出方法,包括将条状材料平移通过沉积室中的物理气相沉积区,并提供沿同一沉积室中的处理路径串联设置的第一和第二基本封闭的容器,每个容器发射不同的源材料以产生重叠 羽流并且具有沿着该区域的宽度均匀地分布在该容器上的蒸气输送喷嘴的阵列,并且被配置为排出重叠的羽流以产生具有穿过该宽度的基本上均匀的组成的雾和跨越该区域长度的变化的组合。 另外,细长的气相沉积容器具有细长的盖子,其细长的盖子包括沿着其细长轴线彼此分开的多个喷嘴,以及围绕多个喷嘴的盖子中的连续的加热元件,加热元件具有电连接到电源 船的同一侧。

    Multiple-nozzle thermal evaporation source
    5.
    发明授权
    Multiple-nozzle thermal evaporation source 有权
    多喷嘴热蒸发源

    公开(公告)号:US06562405B2

    公开(公告)日:2003-05-13

    申请号:US10234604

    申请日:2002-09-04

    IPC分类号: C23C1400

    CPC分类号: C23C14/243

    摘要: A multiple nozzle thermal evaporation source includes a plurality of nozzles having a tapered shape. The nozzles may be coated with a thermally conductive material with a low emissivity material.

    摘要翻译: 多喷嘴热蒸发源包括具有锥形形状的多个喷嘴。 喷嘴可以涂覆有具有低辐射率材料的导热材料。

    Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
    6.
    发明授权
    Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates 有权
    在金属或金属涂层的基材上形成硒化物,硫化物或混合的硒化物 - 硫化物膜

    公开(公告)号:US08168256B2

    公开(公告)日:2012-05-01

    申请号:US11577777

    申请日:2005-10-21

    IPC分类号: C23C16/00 C23C16/06

    摘要: A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

    摘要翻译: 一种用于防止复合结构中的裂纹的方法和组合物,其包含金属涂覆的基底和硒化物,硫化物或混合的硒化物硫化物膜。 具体地说,在其上沉积有铜,铟镓镓(CIGS)膜的钼涂覆的基底的涂层中防止了裂纹。 通过向Mo中添加Se钝化量的氧并限制沉积在Mo涂层上的Se的量来抑制裂纹。

    Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates
    7.
    发明申请
    Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates 审中-公开
    在金属或金属涂覆的基底上形成硒化物,硫化物或混合的硒化物 - 硫化物膜

    公开(公告)号:US20120213933A1

    公开(公告)日:2012-08-23

    申请号:US13460253

    申请日:2012-04-30

    IPC分类号: B05D3/10 C03C17/22 B05D7/14

    摘要: A method of forming a metal-coated substrate having a CuInGaR2 film on a surface of the metal coating is performed in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti. The method includes the steps of: providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and selenizing the precursor film; wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR2 film.

    摘要翻译: 在金属涂层的表面上形成具有CuInGaR 2膜的金属涂覆的基材的方法是以基本上防止金属与Se的反应的方式进行的,其中R是Se或Se和S的组合,其中 该金属选自Mo,W,Cr,Ta,Nb,V和Ti。 该方法包括以下步骤:在金属涂层的表面上提供前体膜,其中金属涂层含有足以抑制金属与Se反应的量的氧; 并对前体膜进行硒化; 其中所述硒化作用仅限于提供形成CuInGaR 2膜所需的量的Se。

    Thermal Evaporation Sources with Separate Crucible for Holding the Evaporant Material
    8.
    发明申请
    Thermal Evaporation Sources with Separate Crucible for Holding the Evaporant Material 审中-公开
    具有独立坩埚的热蒸发源用于保持蒸发材料

    公开(公告)号:US20110275196A1

    公开(公告)日:2011-11-10

    申请号:US13099699

    申请日:2011-05-03

    申请人: Erten Eser

    发明人: Erten Eser

    IPC分类号: H01L21/20 C23C26/00

    CPC分类号: C23C14/243

    摘要: One aspect of the invention comprises a thermal evaporation source comprising an evaporant chamber, a heater for providing heat to the evaporation chamber; and a crucible in thermal communication with the evaporation chamber for containing a volume of evaporant. The evaporant chamber comprises a first material of construction, and the crucible comprises a second material of construction different from the first material of construction and having a lesser porosity with respect to the evaporant than the first material of construction. For example, for a copper evaporant, the evaporant chamber may comprise a sintered material, such as sintered graphite, and the crucible may comprise a pyrolytic material, such as pyrolytic graphite or pyrolytic boron nitride.

    摘要翻译: 本发明的一个方面包括一个包括蒸发室的热蒸发源,一个用于向蒸发室提供热量的加热器; 以及与蒸发室热连通以容纳一定体积的蒸发器的坩埚。 蒸发室包括第一种结构材料,并且该坩埚包括与第一种结构材料不同的第二种结构材料,并且相对于蒸发剂具有比第一种结构材料更小的孔隙率。 例如,对于铜蒸发器,蒸发室可以包括烧结材料,例如烧结石墨,并且坩埚可以包括热解材料,例如热解石墨或热解氮化硼。

    FORMATION OF SELENIDE, SULFIDE OR MIXED SELENIDE-SULFIDE FILMS ON METAL OR METAL COATED SUBSTRATES
    9.
    发明申请
    FORMATION OF SELENIDE, SULFIDE OR MIXED SELENIDE-SULFIDE FILMS ON METAL OR METAL COATED SUBSTRATES 审中-公开
    在金属或金属涂层基体上形成硒化物,硫化物或混合的硫化铟锡膜

    公开(公告)号:US20110272787A1

    公开(公告)日:2011-11-10

    申请号:US13105045

    申请日:2011-05-11

    IPC分类号: H01L29/24

    摘要: A composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenidesulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

    摘要翻译: 用于防止复合结构中的裂纹的组合物,其包含金属涂覆的基底和硒化物,硫化物或混合的硒化硫膜。 具体地说,在其上沉积有铜,铟镓镓(CIGS)膜的钼涂覆的基底的涂层中防止了裂纹。 通过向Mo中添加Se钝化量的氧并限制沉积在Mo涂层上的Se的量来抑制裂纹。

    Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates
    10.
    发明申请
    Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates 有权
    在金属或金属涂覆的基底上形成硒化物,硫化物或混合的硒化物 - 硫化物膜

    公开(公告)号:US20090017207A1

    公开(公告)日:2009-01-15

    申请号:US11577777

    申请日:2005-10-21

    IPC分类号: C23C16/06

    摘要: A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

    摘要翻译: 一种用于防止复合结构中的裂纹的方法和组合物,其包含金属涂覆的基底和硒化物,硫化物或混合的硒化物硫化物膜。 具体地说,在其上沉积有铜,铟镓镓(CIGS)膜的钼涂覆的基底的涂层中防止了裂纹。 通过向Mo中添加Se钝化量的氧并限制沉积在Mo涂层上的Se的量来抑制裂纹。