摘要:
Disclosed are methods for utilizing programmable logic devices that contain at least one localized defect. Such devices are tested to determine their suitability for implementing selected designs that may not require the resources impacted by the defect. If the FPGA is found to be unsuitable for one design, additional designs may be tested. The test methods in some embodiments employ test circuits derived from a user's design to verify PLD resources required for the design. The test circuits allow PLD vendors to verify the suitability of a PLD for a given user's design without requiring the PLD vendor to understand the user's design.
摘要:
Disclosed are methods for utilizing programmable logic devices that contain at least one localized defect. Such devices are tested to determine their suitability for implementing selected designs that may not require the resources impacted by the defect. If the FPGA is found to be unsuitable for one design, additional designs may be tested. The test methods in some embodiments employ test circuits derived from a user's design to verify PLD resources required for the design. The test circuits allow PLD vendors to verify the suitability of a PLD for a given user's design without requiring the PLD vendor to understand the user's design.
摘要:
A new testing method uses a field programmable gate array to emulate faults, instead of using a separate computer to simulate faults. In one embodiment, a few (e.g., two or three) known good FPGAs are selected. A fault is introduced into the design of a FPGA configuration. The configuration is loaded into the FPGAs. A test vector is applied and the result is evaluated. If the result is different from that of a fault-free configuration, the fault is caught. One application of this method is to evaluate fault coverage. A fault model that can be used in the present invention is disclosed.
摘要:
FPGAs that contain at least one localized defect may be used to implement some designs if the localized defect is not used in the designs. To determine if the FPGA is suitable to implement a design, the design is loaded into the FPGA. The FPGA is tested to determine whether it can execute the design accurately even with the localized defect. The FPGA will be marked as suitable for that design if it passes the test. If the FPGA is found to be unsuitable for one design, additional designs may be tested. Thus, a FPGA manufacturer can sell FPGAs that are normally discarded. As a result, the price of these FPGAs could be set significantly low.
摘要:
A reticle that is modified to prevent bridging of the masking material (e.g., chrome) between portions of the lithographic mask pattern during an integrated circuit fabrication process. According to a first aspect, the modification involves electrically connecting the various portions of the lithographic mask pattern that balance charges generated in the portions during fabrication processes. In one embodiment, sub-resolution wires that extend between the lithographic mask pattern portions facilitate electrical conduction between the mask pattern portions, thereby equalizing dissimilar charges. In another embodiment, a transparent conductive film is formed over the lithographic mask pattern to facilitate conduction. In accordance with a second aspect, the modification involves separating the various portions of the lithographic mask pattern into relatively small segments by providing sub-resolution gaps between the various portions, thereby minimizing the amount of charge that is generated on each portion.
摘要:
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.
摘要:
An arrangement and method for detecting sequential processing effects on products to be manufactured in a manufacturing process orders a first set of the products in a first specified processing sequence for a first process step in the manufacturing process. In order to prevent any positional trend created at one process step from being carried over into the next process step, the first set of the products is re-ordered into a second, different specified processing sequence for a second process step in the manufacturing process. Data regarding responses of the first set of the products to the process steps are extracted. The extracted data are correlated with the first and second processing sequences and data analysis is performed on the correlated extracted data. These steps are repeated for subsequent sets of the products, so that although the specified processing sequence is different for each of the individual process steps for a set of products, the same processing sequences for the individual processing steps are used for subsequent sets of the products to be manufactured. Since the processing sequences are not randomized from set to set and do not have to be provided to a database, the amounts of interfacing and disk storage needed are greatly reduced.
摘要:
The configuration of a faulty line segment in a switch matrix of a programmable logic device is identified using read-back capture. Each original programmable interconnection point (“PIP”) in the line segment is tested by generating routes from a first logic port through the original line segment and PIP, through all PIPs, adjacent to the original PIP to the opposite logic port. Routes through all PIPs adjacent to the PIPs in the line segment from the first logic port to the second logic port, and from the second logic port to the first logic port, are tested to isolate the fault in the line segment.
摘要:
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively suicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.
摘要:
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.