Apparatus for removing photoresist edge beads from thin film substrates
    1.
    发明授权
    Apparatus for removing photoresist edge beads from thin film substrates 有权
    用于从薄膜基板去除光致抗蚀剂边缘珠的装置

    公开(公告)号:US06614507B2

    公开(公告)日:2003-09-02

    申请号:US10263593

    申请日:2002-10-03

    IPC分类号: G03B2754

    CPC分类号: G03F7/2028

    摘要: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

    摘要翻译: 通过使光致抗蚀剂珠沿着大致垂直于光致抗蚀剂珠粒表面的多个非平行路径从曝光源曝光来从基板的边缘表面去除正光致抗蚀剂珠粒。 光可以沿着非平行路径同时由光导引导,或者安装件可以支撑邻近珠的光导,以将光导移动到各个位置以引导光沿着非平行路径。 或者,多个光源将光沿着非平行路径引导到珠。 在任何情况下,然后用溶剂除去曝光的光致抗蚀剂珠粒。

    Method and apparatus for removing photoresist edge beads from thin film substrates
    2.
    发明授权
    Method and apparatus for removing photoresist edge beads from thin film substrates 有权
    从薄膜基板去除光致抗蚀剂边缘珠的方法和装置

    公开(公告)号:US06495312B1

    公开(公告)日:2002-12-17

    申请号:US09879642

    申请日:2001-06-12

    IPC分类号: G03F722

    CPC分类号: G03F7/2028

    摘要: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

    摘要翻译: 通过使光致抗蚀剂珠沿着大致垂直于光致抗蚀剂珠粒表面的多个非平行路径从曝光源曝光来从基板的边缘表面去除正光致抗蚀剂珠粒。 光可以沿着非平行路径同时由光导引导,或者安装件可以支撑邻近珠的光导,以将光导移动到各个位置以引导光沿着非平行路径。 或者,多个光源将光沿着非平行路径引导到珠。 在任何情况下,然后用溶剂除去曝光的光致抗蚀剂珠粒。

    Method of wafer patterning for reducing edge exclusion zone
    3.
    发明授权
    Method of wafer patterning for reducing edge exclusion zone 失效
    用于减少边缘排除区的晶片图案化方法

    公开(公告)号:US07074710B2

    公开(公告)日:2006-07-11

    申请号:US10980945

    申请日:2004-11-03

    IPC分类号: H01L21/4763

    摘要: A method includes steps of: (a) providing a wafer on which a film has been deposited; (b) exposing an annular area in an edge exclusion zone of the wafer to radiation having a wavelength suitable for patterning the film in the annular area; and (c) modulating the radiation while exposing the annular area to form a pattern in the film in the annular area.

    摘要翻译: 一种方法包括以下步骤:(a)提供其上沉积有膜的晶片; (b)将晶片的边缘排除区域中的环形区域暴露于具有适于在环形区域中图案化膜的波长的辐射; 和(c)在暴露环形区域的同时调制辐射,以在环形区域中的膜中形成图案。

    Dynamic edge bead removal
    4.
    发明申请
    Dynamic edge bead removal 有权
    动态边缘珠去除

    公开(公告)号:US20060073703A1

    公开(公告)日:2006-04-06

    申请号:US10950839

    申请日:2004-09-27

    IPC分类号: H01L21/302

    CPC分类号: H01L21/02087 H01L21/6708

    摘要: A method of removing an edge bead of a coated material on a substrate. The substrate is rotated, and a fluid that solvates the coated material is delivered. The delivery of the fluid is directed radially inward on the substrate at a rate of between about three millimeters per second and about twenty millimeters per second until a desired innermost fluid delivery position on the substrate is attained. Immediately upon attaining the desired innermost fluid delivery position on the substrate, the delivery of the fluid is directed radially outward off the substrate at a rate of more than zero millimeters per second and less than about four millimeters per second. The rotation of the substrate is ceased.

    摘要翻译: 一种去除衬底上涂覆材料的边缘珠的方法。 旋转衬底,并且输送溶剂化涂覆材料的流体。 流体的输送以约3毫米每秒和约20毫米/秒的速率径向向内指向基底上,直到达到基底上所需的最内流体输送位置。 在基板上达到理想的最内流体输送位置之后,流体的输送立即以大于零毫米/秒的速度从基板径向向外指向,并且小于约4毫米/秒。 衬底的旋转停止。

    Surface coordinate system
    5.
    发明申请
    Surface coordinate system 有权
    表面坐标系

    公开(公告)号:US20060073617A1

    公开(公告)日:2006-04-06

    申请号:US10949760

    申请日:2004-09-24

    IPC分类号: H01L21/00

    CPC分类号: G01R31/2891 G01R31/311

    摘要: A method for creating a reference for a first position on a substrate edge. A first reference point is selected relative to a circumference of the substrate edge, and a second reference point is selected relative to a bevel of the substrate edge. A first distance along the circumference of the substrate edge between the first reference point and the first position is identified as a first coordinate, and a second distance along the bevel of the substrate edge between the second reference point and the first position is identified as a second coordinate. The first coordinate and the second coordinate are used as the reference for the first position.

    摘要翻译: 一种用于为衬底边缘上的第一位置创建参考的方法。 相对于衬底边缘的圆周选择第一参考点,并且相对于衬底边缘的斜面选择第二参考点。 沿着第一参考点和第一位置之间的衬底边缘的圆周的第一距离被识别为第一坐标,并且沿着第二参考点和第一位置之间的衬底边缘的斜面的第二距离被识别为 第二个坐标。 第一坐标和第二坐标用作第一位置的参考。

    METHOD AND CONTROL SYSTEM FOR IMPROVING CMP PROCESS BY DETECTING AND REACTING TO HARMONIC OSCILLATION
    6.
    发明申请
    METHOD AND CONTROL SYSTEM FOR IMPROVING CMP PROCESS BY DETECTING AND REACTING TO HARMONIC OSCILLATION 失效
    通过检测和反应谐波振荡来改善CMP工艺的方法和控制系统

    公开(公告)号:US20050181706A1

    公开(公告)日:2005-08-18

    申请号:US10779966

    申请日:2004-02-17

    IPC分类号: B24B37/04 B24B49/10 B24B49/00

    CPC分类号: B24B37/005 B24B49/10

    摘要: A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.

    摘要翻译: 一种用于检测化学机械抛光工艺中的谐波振荡并与其反应的方法和控制系统,例如通过采取以下步骤中的至少一个步骤:1)减少或消除谐波振荡; 和2)对抗与谐波振荡相关的噪声。 通过减少或消除谐波振荡,可以使用包括低k电介质膜的具有降低的结构强度的膜。 通过对付噪声,提高了工作环境的质量。

    Method of detecting spatially correlated variations in a parameter of an integrated circuit die
    7.
    发明授权
    Method of detecting spatially correlated variations in a parameter of an integrated circuit die 有权
    检测集成电路管芯的参数的空间相关变化的方法

    公开(公告)号:US06787379B1

    公开(公告)日:2004-09-07

    申请号:US10020407

    申请日:2001-12-12

    IPC分类号: H01L2166

    CPC分类号: H01L22/20

    摘要: A method of detecting spatially correlated variations that may be used for detecting statistical outliers in a production lot of integrated circuits to increase the average service life of the production lot includes measuring a selected parameter of each of a plurality of electronic circuits replicated on a common surface; calculating a difference between a value of the selected parameter at a target location and a value of the selected parameter an identical relative location with respect to the target location for each of the plurality of electronic circuits to generate a distribution of differences; calculating an absolute value of the distribution of differences; and calculating an average of the absolute value of the distribution of differences to generate a representative value for the residual for the identical relative location.

    摘要翻译: 一种检测可用于检测集成电路的生产批次中的统计异常值以增加生产批次的平均使用寿命的空间相关变化的方法包括测量在公共表面上复制的多个电子电路中的每一个的选定参数 ; 计算目标位置处的所选参数的值与所选择的参数的值之间的差相对于所述多个电子电路中的每一个的所述目标位置的相同相对位置以产生差分布; 计算差异分布的绝对值; 并且计算差分布的绝对值的平均值,以生成相同相对位置的残差的代表值。

    Voltage contrast monitor for integrated circuit defects
    8.
    发明授权
    Voltage contrast monitor for integrated circuit defects 有权
    集成电路缺陷的电压对比度监测器

    公开(公告)号:US07323768B2

    公开(公告)日:2008-01-29

    申请号:US11131705

    申请日:2005-05-18

    申请人: Bruce Whitefield

    发明人: Bruce Whitefield

    IPC分类号: H01L23/06

    摘要: A semiconductor chip is provided which includes active and inactive IP cores. The spaces on the metal layer associated with the inactive IP cores includes voltage contrast inspection structures. The voltage contrast inspection structures serve to provide improved planarization of the metal layer and provided improved inspection capabilities.

    摘要翻译: 提供了一种半导体芯片,其包括有源和非活动IP核。 与非活动IP核相关联的金属层上的空间包括电压对比度检查结构。 电压对比检查结构用于提供金属层的改进的平面化并提供改进的检查能力。

    Metal removal from solvent
    9.
    发明申请
    Metal removal from solvent 审中-公开
    从溶剂中去除金属

    公开(公告)号:US20060076036A1

    公开(公告)日:2006-04-13

    申请号:US10963255

    申请日:2004-10-12

    IPC分类号: B08B7/04 B08B3/04

    CPC分类号: B08B3/04

    摘要: An apparatus for cleaning a substrate. A cleaning chamber contacts the substrate with a cleaning solution. The cleaning solution thereby removes contaminants from the substrate and additionally leaches material from the substrate. A gettering chamber receives the cleaning solution, and includes a surface for chemically attracting the leached material and precipitating the leached material at least in part out of the cleaning solution. By removing the leached copper from the cleaning solution In this manner, the various embodiments of the present invention reduce the amount of copper that is available for plating out of the solvent, and therefore reduces the number and size of nodules that can form on the substrate. Thus, the need for other expensive approaches, like chemical replacement or less effective cleaning solvents, is obviated. The aluminum that is preferably used in the plating cell not only has an affinity to collect copper, but it is also known to be compatible with the solvent and substrates, since it is already present in abundance on the substrates themselves.

    摘要翻译: 一种用于清洁基底的装置。 清洁室与清洁溶液接触基板。 因此,清洁溶液从基底上除去污染物,另外从基材中沥出材料。 吸气室接收清洁溶液,并且包括用于化学吸引浸出的材料并使至少部分地从清洗溶液中浸出的材料沉淀的表面。 通过从清洗溶液中除去浸出的铜以这种方式,本发明的各种实施方案减少了可用于电镀出溶剂的铜的量,因此减少了可在基材上形成的结核的数量和尺寸 。 因此,消除了对其他昂贵方法的需要,例如化学更换或较不有效的清洁溶剂。 优选在电镀单元中使用的铝不仅具有收集铜的亲和性,而且已知与溶剂和基材相容,因为它已经在基材本身上已经大量存在。