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公开(公告)号：US20150021195A1
公开(公告)日：2015-01-22
申请号：US13947342
申请日：2013-07-22
申请人： Rohan Akolkar , Uziel Landau
发明人： Rohan Akolkar , Uziel Landau
摘要： An electrochemical cell and method for electrowinning a variety of multivalent metals including titanium is described. In one aspect, the invention provides an electrochemical cell comprising an anolyte chamber comprising an anode and configured for containing an anolyte, a catholyte chamber comprising a cathode and configured for containing a catholyte comprising a metal to be electrolytically produced, and a diaphragm separating the anolyte chamber and the catholyte chamber, the diaphragm configured to control the potential drop across the diaphragm so that it is below the potential difference required for inducing bipolarity at the diaphragm.
摘要翻译： 描述了用于电解提取包括钛在内的各种多价金属的电化学电池和方法。 一方面，本发明提供一种电化学电池，其包含阳极电解液室，该阳极电解液室包括阳极并构造成用于容纳阳极电解液，阴极电解液室包括阴极，并构造成用于容纳包含要电解产生的金属的阴极电解液，以及隔离阳极电解液 腔室和阴极电解液室，隔膜被配置为控制隔膜上的电位降，使得其低于在隔膜处诱导双极性所需的电位差。
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公开(公告)号：US20100200991A1
公开(公告)日：2010-08-12
申请号：US12705143
申请日：2010-02-12
申请人： Rohan Akolkar , Sridhar Balakrishnan , Adrien R. Lavoie , Tejaswi K. Indukuri , James S. Clarke
发明人： Rohan Akolkar , Sridhar Balakrishnan , Adrien R. Lavoie , Tejaswi K. Indukuri , James S. Clarke
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： C23C16/045 , C23C16/18 , C23C16/45529 , C23C16/45542 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76873
摘要： Techniques are disclosed that enable an interconnect structure that is resistance to electromigration. A liner is deployed underneath a seed layer of the structure. The liner can be a thin continuous and conformal layer, and may also limit oxidation of an underlying barrier (or other underlying surface). A dopant that is compatible (non-alloying, non-reactive) with the liner is provided to alloy the seed layer, and allows for dopant segregation at the interface at the top of the seed layer. Thus, electromigration performance is improved.
摘要翻译： 公开了能够实现电迁移阻力的互连结构的技术。 衬垫部署在结构的种子层的下方。 衬垫可以是薄的连续和保形层，并且还可以限制下面的屏障（或其他下面的表面）的氧化。 提供与衬垫相容（非合金化，非反应性）与掺杂剂的掺杂剂，以使种子层合金，并允许掺杂剂在晶种层顶部的界面处分离。 因此，提高了电迁移性能。
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公开(公告)号：US20070267297A1
公开(公告)日：2007-11-22
申请号：US11383925
申请日：2006-05-17
申请人： Rohan Akolkar , Valery Dubin
发明人： Rohan Akolkar , Valery Dubin
IPC分类号： C25D5/02
CPC分类号： C25D3/38 , H01L21/2885 , H01L21/76879
摘要： A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. A method comprising forming an interconnection opening through a dielectric material to a contact point; lining the interconnection opening with a barrier layer and a seed layer; and electroplating an interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine.
摘要翻译： 一种方法，包括通过介电材料形成到接触点的互连开口; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。 一种方法，包括通过介电材料形成到接触点的互连开口; 用隔离层和种子层对互连开口进行衬里; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。
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4.发明申请DUAL METAL INTERCONNECTS FOR IMPROVED GAP-FILL, RELIABILITY, AND REDUCED CAPACITANCE 审中-公开改进的GAP-FILL，可靠性和降低电容的双金属互连公开(公告)号：US20110079910A1
公开(公告)日：2011-04-07
申请号：US12967865
申请日：2010-12-14
IPC分类号： H01L23/532
CPC分类号： H01L21/76879 , H01L21/288 , H01L21/76877 , H01L23/5226 , H01L23/53214 , H01L23/53228 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.
摘要翻译： 本文描述了用于形成双金属互连的装置和方法的实施例。 可以描述和要求保护其他实施例。
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公开(公告)号：US20090169760A1
公开(公告)日：2009-07-02
申请号：US11968136
申请日：2007-12-31
CPC分类号： C23C14/046 , C23C14/025 , C23C14/16 , C23C14/5806 , C23C14/588 , H01L21/76846 , H01L21/76882 , H01L23/53238
摘要： Methods for making copper (Cu) interconnects in semiconductor devices for interconnect dimensions less than 50 nm are described. The processes form Cu interconnects using a sequence of barrier layer, liner layer, and Cu deposition layer depositions, followed by a thermally assisted Cu reflow of the Cu deposition layer, and then a chemical mechanical polish (CMP) to removed excess portions of the reflowed Cu. The liner layer comprises noble metals such as Ru, Ir, Os, Rh, Re, Pd, Pt, and Au. Such processes avoids the formation of voids in copper interconnects with dimensions less than 50 nm.
摘要翻译： 描述了半导体器件中铜（Cu）互连的互连尺寸小于50nm的方法。 这些过程使用阻挡层，衬层和Cu沉积层沉积序列形成Cu互连，随后是Cu沉积层的热辅助铜回流，然后用化学机械抛光（CMP）去除被回流的多余部分 铜。 衬里层包括贵金属如Ru，Ir，Os，Rh，Re，Pd，Pt和Au。 这种方法避免了在尺寸小于50nm的铜互连件中形成空隙。
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6.发明授权Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance 有权双金属互连，可提高间隙填充，可靠性和降低电容公开(公告)号：US07867891B2
公开(公告)日：2011-01-11
申请号：US12316304
申请日：2008-12-10
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76879 , H01L21/288 , H01L21/76877 , H01L23/5226 , H01L23/53214 , H01L23/53228 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.
摘要翻译： 本文描述了用于形成双金属互连的装置和方法的实施例。 可以描述和要求保护其他实施例。
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7.发明申请Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance 有权双金属互连，可提高间隙填充，可靠性和降低电容公开(公告)号：US20100140804A1
公开(公告)日：2010-06-10
申请号：US12316304
申请日：2008-12-10
IPC分类号： H01L23/538 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76879 , H01L21/288 , H01L21/76877 , H01L23/5226 , H01L23/53214 , H01L23/53228 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.
摘要翻译： 本文描述了用于形成双金属互连的装置和方法的实施例。 可以描述和要求保护其他实施例。
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