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    COPPER METALLIZATION UTILIZING REFLOW ON NOBLE METAL LINERS
    1.
    发明申请
    COPPER METALLIZATION UTILIZING REFLOW ON NOBLE METAL LINERS 审中-公开
    铜金属化使用金属内衬使用反射

    公开(公告)号：US20090169760A1

    公开(公告)日：2009-07-02

    申请号：US11968136

    申请日：2007-12-31

    申请人： Rohan Akolkar ,  Florian Gstrein ,  Boyan Boyanov ,  Sridhar Balakrishnan

    发明人： Rohan Akolkar ,  Florian Gstrein ,  Boyan Boyanov ,  Sridhar Balakrishnan

    IPC分类号： C23C4/06 ,  B05D5/12

    CPC分类号： C23C14/046 ,  C23C14/025 ,  C23C14/16 ,  C23C14/5806 ,  C23C14/588 ,  H01L21/76846 ,  H01L21/76882 ,  H01L23/53238

    摘要： Methods for making copper (Cu) interconnects in semiconductor devices for interconnect dimensions less than 50 nm are described. The processes form Cu interconnects using a sequence of barrier layer, liner layer, and Cu deposition layer depositions, followed by a thermally assisted Cu reflow of the Cu deposition layer, and then a chemical mechanical polish (CMP) to removed excess portions of the reflowed Cu. The liner layer comprises noble metals such as Ru, Ir, Os, Rh, Re, Pd, Pt, and Au. Such processes avoids the formation of voids in copper interconnects with dimensions less than 50 nm.

    摘要翻译： 描述了半导体器件中铜（Cu）互连的互连尺寸小于50nm的方法。 这些过程使用阻挡层，衬层和Cu沉积层沉积序列形成Cu互连，随后是Cu沉积层的热辅助铜回流，然后用化学机械抛光（CMP）去除被回流的多余部分 铜。 衬里层包括贵金属如Ru，Ir，Os，Rh，Re，Pd，Pt和Au。 这种方法避免了在尺寸小于50nm的铜互连件中形成空隙。

    METALLIZATION OF FLUOROCARBON-BASED DIELECTRIC FOR INTERCONNECTS
    5.
    发明申请
    METALLIZATION OF FLUOROCARBON-BASED DIELECTRIC FOR INTERCONNECTS 有权
    用于互连的基于氟化物的电介质的金属化

    公开(公告)号：US20140027909A1

    公开(公告)日：2014-01-30

    申请号：US13560936

    申请日：2012-07-27

    申请人： Florian Gstrein ,  David J. Michalak

    发明人： Florian Gstrein ,  David J. Michalak

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/0212 ,  G06F1/16 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3212 ,  H01L21/52 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the present disclosure are directed towards metallization of a fluorocarbon-based dielectric material for interconnect applications. In one embodiment, an apparatus includes a semiconductor substrate, a device layer disposed on the semiconductor substrate, the device layer including one or more transistor devices, and an interconnect layer disposed on the device layer, the interconnect layer comprising a fluorocarbon-based dielectric material, where x represents a stoichiometric quantity of fluorine relative to carbon in the dielectric material, and one or more interconnect structures configured to route electrical signals to or from the one or more transistor devices, the one or more interconnect structures comprising cobalt (Co), or ruthenium (Ru), or combinations thereof. Other embodiments may be described and/or claimed.

    摘要翻译： 本公开的实施例涉及用于互连应用的基于碳氟化合物的介电材料的金属化。 在一个实施例中，一种设备包括半导体衬底，设置在半导体衬底上的器件层，器件层包括一个或多个晶体管器件，以及布置在器件层上的互连层，该互连层包括氟碳基电介质材料 ，其中x表示相对于介电材料中的碳的化学计量的氟，以及一个或多个互连结构，其配置成将电信号传递到一个或多个晶体管器件或从一个或多个晶体管器件引出，所述一个或多个互连结构包括钴（Co） 或钌（Ru）或其组合。 可以描述和/或要求保护其他实施例。

    Self Forming Metal Fluoride Barriers for Fluorinated Low-K Dielectrics
    6.
    发明申请
    Self Forming Metal Fluoride Barriers for Fluorinated Low-K Dielectrics 审中-公开
    氟化低K电介质的自形成金属氟化物屏障

    公开(公告)号：US20100244252A1

    公开(公告)日：2010-09-30

    申请号：US12416131

    申请日：2009-03-31

    申请人： Christopher J. Jezewski ,  Daniel J. Zierath ,  Florian Gstrein

    发明人： Christopher J. Jezewski ,  Daniel J. Zierath ,  Florian Gstrein

    IPC分类号： H01L23/538 ,  H01L21/768

    CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device and method of forming fluoride metal barriers at an interface of a fluorinated low-K dielectric and Cu or Cu alloy interconnects is disclosed. The fluoride metal barriers may prevent interconnects from reacting with the fluorinated low-K dielectric. The method may include depositing a thin film of metal or metal alloy on the fluorinated low-K dielectric. The thin film may include a metal or metal alloying element that reacts with free fluorine and/or fluorine compounds from the fluorinated low-K dielectric to form fluoride metal barriers.

    摘要翻译： 公开了在氟化低K电介质和Cu或Cu合金互连的界面处形成氟化物金属屏障的装置和方法。 氟化物金属屏障可以防止互连与氟化低K电介质反应。 该方法可以包括在氟化低K电介质上沉积金属或金属合金薄膜。 薄膜可以包括与来自氟化低K电介质的游离氟和/或氟化合物反应以形成氟化物金属屏障的金属或金属合金元素。

    Metal oxide sensors and method of forming
    7.
    发明授权
    Metal oxide sensors and method of forming 有权
    金属氧化物传感器及成型方法

    公开(公告)号：US07208327B2

    公开(公告)日：2007-04-24

    申请号：US11136585

    申请日：2005-05-25

    申请人： Florian Gstrein ,  Valery M. Dubin

    发明人： Florian Gstrein ,  Valery M. Dubin

    IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： G01N27/129

    摘要： A metal oxide sensor is provided on a semiconductor substrate to provide on-chip sensing of gases. The sensor may include a metal layer that may have pores formed by lithography to be of a certain width. The top metal layer may be oxidized resulting in a narrowing of the pores. Another metal layer may be formed over the oxidized layer and electrical contacts may be formed on the metal layer. The contacts may be coupled to a monitoring system that receives electrical signals indicative of gases sensed by the metal oxide sensor.

    摘要翻译： 金属氧化物传感器设置在半导体衬底上以提供对气体的片上感测。 传感器可以包括可以具有通过光刻形成的孔以具有一定宽度的金属层。 顶部金属层可能被氧化，导致孔变窄。 可以在氧化层之上形成另一金属层，并且可以在金属层上形成电接触。 触点可以耦合到监测系统，监测系统接收指示由金属氧化物传感器感测的气体的电信号。

    METAL INTERCONNECT STRUCTURES FOR SEMICONDUCTOR DEVICES
    10.
    发明申请
    METAL INTERCONNECT STRUCTURES FOR SEMICONDUCTOR DEVICES 审中-公开
    金属互连结构的半导体器件

    公开(公告)号：US20090166867A1

    公开(公告)日：2009-07-02

    申请号：US11968139

    申请日：2007-12-31

    申请人： Harsono Simka ,  Sadasivan Shankar ,  Michael Haverty ,  Ramanan Chebiam ,  Florian Gstrein

    发明人： Harsono Simka ,  Sadasivan Shankar ,  Michael Haverty ,  Ramanan Chebiam ,  Florian Gstrein

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L21/76874 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

    摘要： Cu interconnect structures using a bottomless liner to reduce the copper interfacial electron scattering and lower the electrical resistance are described in this application. The interconnect structures comprise a nucleation layer and a liner layer that may be formed by an oxide or nitride. The bottom portion of the liner layer is removed to expose the nucleation layer. Since the liner is bottomless, the nucleation layer is exposed during Cu deposition and serves to catalyze copper nucleation and enable selective growth of copper near the bottom (where the nucleation layer is exposed), rather than near the liner sidewalls. Thus, copper may be selectively grown with a bottom-up fill behavior than can reduce or eliminate formation of voids. Other embodiments are described.

    摘要翻译： 在本申请中描述了使用无底衬管以减少铜界面电子散射并降低电阻的Cu互连结构。 互连结构包括可以由氧化物或氮化物形成的成核层和衬里层。 去除衬里层的底部以露出成核层。 由于衬垫是无底的，所以成核层在Cu沉积期间被暴露，并且用于催化铜成核并使底部（其中成核层被暴露）附近的铜的选择性生长，而不是靠近衬里侧壁。 因此，铜可以以自下而上的填充行为选择性地生长，可以减少或消除空隙的形成。 描述其他实施例。