公开(公告)号：US11643324B2

公开(公告)日：2023-05-09

申请号：US16984999

申请日：2020-08-04

Applicant: ROHM CO., LTD.

Inventor： Masahiro Sakuragi

IPC: B81B3/00 ,  G01L9/00

CPC classification number: B81B3/0021 ,  G01L9/0042 ,  G01L9/0054 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315

Abstract: A MEMS sensor includes a silicon substrate that has a first surface and a second surface on a side opposite to the first surface and that has a cavity in the first surface, a silicon diaphragm that has a first surface and a second surface on aside opposite to the first surface and in which the second surface is joined directly to the first surface of the silicon substrate, and a piezoresistance formed at the first surface of the silicon diaphragm, and, in the MEMS sensor, a plane orientation of the first surface of the silicon substrate and a plane orientation of the first surface of the silicon diaphragm differ from each other.

公开(公告)号：US09568385B2

公开(公告)日：2017-02-14

申请号：US14322306

申请日：2014-07-02

Applicant: Rohm Co., Ltd.

Inventor： Nobuyuki Yamada ,  Masahiro Sakuragi ,  Takeshi Yoshida ,  Kei Hayashi

IPC: G01L9/00 ,  G01L9/06 ,  G01L27/00

CPC classification number: G01L9/0051 ,  G01L9/0042 ,  G01L9/008 ,  G01L9/06 ,  G01L27/007 ,  Y10T29/49002

Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).

Abstract translation: 半导体压力传感器（720）包括薄膜压电元件（701），该薄膜压电元件对与薄区域（402）对应的半导体衬底的一部分施加应变。 薄膜压电元件（701）形成为远离用作应变计的扩散电阻器（406,408,410和412）的一定距离，并且延伸到接合焊盘（716A）附近的上电极层 的薄膜压电元件和连接到其下电极的接合焊盘（716F）。 扩散电阻器（406,408,410和412）通过金属布线（722）和扩散布线（724）构成桥接电路。 在自诊断期间，向薄膜压电元件（701）施加规定的电压。 如果电压施加之前和之后的桥接电路的输出差超出规定范围，则确定在半导体压力传感器（720）中发生断线。

公开(公告)号：US10260974B2

公开(公告)日：2019-04-16

申请号：US15428244

申请日：2017-02-09

Applicant: ROHM CO., LTD.

Inventor： Masahiro Sakuragi

IPC: G01L9/00 ,  H05K1/11 ,  H05K1/18

Abstract: An electronic part (air pressure detecting device) 1 includes a sensor element (air pressure sensor element) 2 that includes an ambient air contacting surface S including an ambient air contacting region Sa to be exposed to ambient air, and a supporting substrate 4, arranged to support the sensor element 2. The sensor element 2 is bonded to one surface 4a of the supporting substrate 4 in a state where its ambient air contacting surface S faces the one surface 4a of the supporting substrate 4 and a gap, through which the ambient air flows, is formed between the ambient air contacting surface S and the one surface 4a of the supporting substrate 4.

公开(公告)号：US20140311249A1

公开(公告)日：2014-10-23

申请号：US14322306

申请日：2014-07-02

Applicant: Rohm Co., Ltd.

Inventor： Nobuyuki Yamada ,  Masahiro Sakuragi ,  Takeshi Yoshida ,  Kei Hayashi

IPC: G01L9/00

CPC classification number: G01L9/0051 ,  G01L9/0042 ,  G01L9/008 ,  G01L9/06 ,  G01L27/007 ,  Y10T29/49002

Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).

Abstract translation: 半导体压力传感器（720）包括薄膜压电元件（701），该薄膜压电元件对与薄区域（402）对应的半导体衬底的一部分施加应变。 薄膜压电元件（701）形成为远离用作应变计的扩散电阻器（406,408,410和412）的一定距离，并且延伸到接合焊盘（716A）附近的上电极层 的薄膜压电元件和连接到其下电极的接合焊盘（716F）。 扩散电阻器（406,408,410和412）通过金属布线（722）和扩散布线（724）构成桥接电路。 在自诊断期间，向薄膜压电元件（701）施加规定的电压。 如果电压施加之前和之后的桥接电路的输出差超出规定范围，则确定在半导体压力传感器（720）中发生断线。

公开(公告)号：US10597288B2

公开(公告)日：2020-03-24

申请号：US15989259

申请日：2018-05-25

Applicant: ROHM CO., LTD.

Inventor： Masahiro Sakuragi

IPC: B81C1/00 ,  B81B3/00 ,  G01L19/00 ,  G01L19/14

Abstract: A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.

公开(公告)号：US09410987B2

公开(公告)日：2016-08-09

申请号：US14598280

申请日：2015-01-16

Applicant: ROHM CO., LTD.

Inventor： Goro Nakatani ,  Masahiro Sakuragi ,  Koichi Niino

IPC: G01R1/073 ,  H05K3/40 ,  G01R31/26 ,  G01R3/00

CPC classification number: G01R1/07307 ,  G01R1/07342 ,  G01R3/00 ,  G01R31/26 ,  H05K3/4084 ,  H05K2203/0195 ,  Y10T29/41 ,  Y10T29/49002 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49151 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: A probe card includes a board or silicon substrate; a plurality of probes (terminals) at a first surface of the board, the respective probes having a first extending portion extending along the first surface of the board; a plurality of through-holes formed in correspondence to the respective probes and penetrating between the first and second surfaces of the board; through electrodes embedded in the respective through-holes and conductively connected to the probes in the respective through-holes; and a wiring at the second surface of the board conductively connected to the through electrodes, the wiring having a second extending portion extending along the second surface of the board, wherein the first extending portion and the second extending portion extend in different directions from each other, and a space is formed across the entire width of the first extending portion between the first extending portion and the first surface of the board.

Abstract translation: 探针卡包括基板或硅基板; 在所述板的第一表面处的多个探针（端子），所述各个探针具有沿所述板的所述第一表面延伸的第一延伸部分; 多个通孔，其形成为与所述各个探针对应并且穿过所述板的所述第一表面和所述第二表面之间; 通过嵌入相应通孔中的电极，并在相应的通孔中与探针导电连接; 以及在所述基板的与所述贯通电极导通的第二面的配线，所述布线具有沿着所述基板的第二面延伸的第二延伸部，所述第一延伸部和所述第二延伸部在彼此的不同方向上延伸 并且在第一延伸部分和第一表面之间的第一延伸部分的整个宽度上形成空间。

公开(公告)号：US20150123691A1

公开(公告)日：2015-05-07

申请号：US14598280

申请日：2015-01-16

Applicant: ROHM CO., LTD.

Inventor： Goro Nakatani ,  Masahiro Sakuragi ,  Koichi Niino

IPC: G01R1/073 ,  G01R31/26

CPC classification number: G01R1/07307 ,  G01R1/07342 ,  G01R3/00 ,  G01R31/26 ,  H05K3/4084 ,  H05K2203/0195 ,  Y10T29/41 ,  Y10T29/49002 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49151 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.

Abstract translation: 提供一种用于制造分批检查多个半导体器件的电特性的探针卡的方法。 该方法包括：在形成探针卡的基体的基板的一侧上形成与半导体器件的外部端子接触的多个探针的步骤; 通过光刻和蚀刻在板上形成从板的另一侧到达探针的多个通孔的步骤; 在通孔中分别形成与探针导电连接的电极的步骤; 以及在所述板的另一侧上形成与所述贯通电极导电连接的布线的步骤。