公开(公告)号：US09202962B2

公开(公告)日：2015-12-01

申请号：US13645334

申请日：2012-10-04

Applicant: Rohm Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC: H01L31/18 ,  H01L27/146 ,  H01L31/032

CPC classification number: H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

Abstract: A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

Abstract translation: 固态成像装置包括形成在基板上的电路单元和光电转换单元。 光电转换电路包括放置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物半导体上的光透明电极层 薄膜。 下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

公开(公告)号：US20130149810A1

公开(公告)日：2013-06-13

申请号：US13742049

申请日：2013-01-15

Applicant: Rohm Co., Ltd.

Inventor： Kenichi Miyazaki ,  Osamu Matsushima

IPC: H01L31/032

CPC classification number: H01L31/0322 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/109 ,  Y02E10/541

Abstract: A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

Abstract translation: 光吸收层由黄铜矿结构的化合物半导体膜构成，表面层设置在光吸收层上，表面层具有比化合物半导体膜更高的带隙能量，上电极层为 配置在表面层上，下电极层设置在与上电极层相对的光吸收层的背面，上电极层和下电极层之间施加反向偏压，以检测电 在化合物半导体膜中，通过光电转换产生的电荷产生的电荷乘以冲击电离，而通过对黄铜矿的半导体施加高强度电场而引起电荷的冲击电离的乘积 结构，允许改善的暗电流特性，以及即使在低光的检测中也提高了效率 内生强度，S / N比提高。

公开(公告)号：US20130095594A1

公开(公告)日：2013-04-18

申请号：US13645334

申请日：2012-10-04

Applicant: Rohm Co., Ltd

Inventor： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

Abstract: A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

Abstract translation: 固态成像装置包括形成在基板上的电路单元和光电转换单元。 光电转换电路包括放置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物半导体上的光透明电极层 薄膜。 下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

公开(公告)号：US08828786B2

公开(公告)日：2014-09-09

申请号：US13742049

申请日：2013-01-15

Applicant: Rohm Co., Ltd.

Inventor： Kenichi Miyazaki ,  Osamu Matsushima

IPC: H01L29/72

CPC classification number: H01L31/0322 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/109 ,  Y02E10/541

Abstract: A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

Abstract translation: 光吸收层由黄铜矿结构的化合物半导体膜构成，表面层设置在光吸收层上，表面层具有比化合物半导体膜更高的带隙能量，上电极层为 配置在表面层上，下电极层设置在与上电极层相对的光吸收层的背面，上电极层和下电极层之间施加反向偏压，以检测电 在化合物半导体膜中，通过光电转换产生的电荷产生的电荷乘以冲击电离，而通过对黄铜矿的半导体施加高强度电场而引起电荷的冲击电离的乘积 结构，允许改善的暗电流特性，以及即使在低光的检测中也提高了效率 内生强度，S / N比提高。

公开(公告)号：US08486750B2

公开(公告)日：2013-07-16

申请号：US13717248

申请日：2012-12-17

Applicant: Rohm Co., Ltd.

Inventor： Osamu Matsushima ,  Kenichi Miyazaki

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L27/14632 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor film of chalcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of as set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions.

Abstract translation: 一种用于固态成像装置的制造方法，包括形成在基板上的电路，在电路上形成下电极层，图案化下电极层，将其逐像分割成一组段，并形成化合物半导体膜， 黄铜矿结构在整个区域的元素区域。 在化合物半导体薄膜上以抗蚀剂层的形式将抗蚀剂层施加到像素方向的图案中，根据分隔成该组段的底部电极层作为基底，并在元件区域的整个区域上施加离子掺杂，形成元件 分离化合物半导体薄膜中的区域。 该方法包括去除用于曝光由元件分离区域以像素方式分离的化合物半导体薄膜的表面的抗蚀剂层。 在元件区域的整个区域上以平坦化的方式形成透明电极层。

公开(公告)号：US08963272B2

公开(公告)日：2015-02-24

申请号：US13918042

申请日：2013-06-14

Applicant: Rohm Co., Ltd.

Inventor： Takuji Maekawa ,  Osamu Matsushima ,  Toshihisa Maeda

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L31/02164 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer.

Abstract translation: 根据本发明的光电转换器包括基板，布置在基板上的下电极层，布置在下电极层上以覆盖下电极层并划分成多个像素的黄铜矿结构的化合物半导体层， 配置在化合物半导体层上的透明电极层，以及配置在化合物半导体层上的各像素周围的屏蔽层。

公开(公告)号：US20130122634A1

公开(公告)日：2013-05-16

申请号：US13717248

申请日：2012-12-17

Applicant: Rohm Co., Ltd.

Inventor： Osamu Matsushima ,  Kenichi Miyazaki

IPC: H01L31/032

CPC classification number: H01L27/14632 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions.

Abstract translation: 一种用于固态成像装置的制造方法，包括形成在基板上的电路，在电路上形成下电极层，图案化下电极层，将其像素分割成一组段，并形成化合物半导体薄膜 在整个区域的元素区域的炭黑结构。 在化合物半导体薄膜上以抗蚀剂层的形式将抗蚀剂层施加到像素方向的图案中，根据分隔成该组段的底部电极层作为基底，并在元件区域的整个区域上施加离子掺杂，形成元件 分离化合物半导体薄膜中的区域。 该方法包括去除用于曝光由元件分离区域以像素方式分离的一组化合物半导体薄膜的表面的抗蚀剂层。 在元件区域的整个区域上以平坦化的方式形成透明电极层。