公开(公告)号：US11004938B2

公开(公告)日：2021-05-11

申请号：US16425405

申请日：2019-05-29

Applicant: ROHM CO., LTD.

Inventor： Takuji Maekawa ,  Mitsuru Morimoto ,  Makoto Takamura

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/78 ,  H01L21/18 ,  H01L29/66

Abstract: A semiconductor substrate structure includes: a substrate; and an epitaxial growth layer bonded to the substrate, wherein the substrate and the epitaxial growth layer are bonded by a room-temperature bonding or a diffusion bonding.

公开(公告)号：US20210125826A1

公开(公告)日：2021-04-29

申请号：US17254623

申请日：2019-06-21

Applicant: Massachusetts Institute of Technology ,  The Government of the United States of America, as Represented by the Secretary of the Navy ,  ROHM Co., Ltd.

Inventor： Rachael L. Myers-Ward ,  Jeehwan Kim ,  Kuan Qiao ,  Wei Kong ,  David Kurt Gaskill ,  Takuji Maekawa ,  Noriyuki Masago

IPC: H01L21/02

Abstract: Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride, and related articles, are generally described. In some embodiments, a SiC film is fabricated over a layer comprising graphene and/or hexagonal boron nitride, which in turn is disposed over a substrate. The layer and/or the substrate may be lattice-matched with the SiC film to reduce defect density in the SiC film. The fabricated SiC film may then be removed from the substrate via, for example, a stressor attached to the SiC film. In certain cases, the layer serves as a reusable platform for growing SiC films and also serves a release layer that allows fast, precise, and repeatable release at the layer surface.

公开(公告)号：US10184894B2

公开(公告)日：2019-01-22

申请号：US14785902

申请日：2014-08-21

Applicant: Rohm Co., Ltd.

Inventor： Hidemi Takasu ,  Toshihisa Maeda ,  Masahide Tanaka ,  Takuji Maekawa

IPC: G01N21/65 ,  H04N13/344 ,  A61B1/00 ,  A61B1/06 ,  A61B5/00 ,  G01J3/02 ,  G01J3/28 ,  G01J3/44 ,  G02B27/01 ,  G06T7/00 ,  H04N13/254 ,  H04N13/257 ,  H04N13/239 ,  G02B5/20 ,  H04N5/225 ,  H04N5/33

Abstract: A target is irradiated in a time-shared manner with a visible-light-range illumination light source and an infrared laser beam for Raman scattering, and a target image is formed with an image-capturing lens on a CIGS image sensor provided with a visible-light-range filter, a narrow-band infrared filter for Raman-scattered light measurement, and a near-band reference narrow-band infrared filter that does not let Raman-scattered light pass through. In a preliminary measurement, a plurality of normal sections are measured and averaged, and by using the same as a reference, an actual measurement of Raman scattering is performed. In displaying a visible-light image with the CIGS image sensor, superimposed display is performed to specify sections where Raman scattering is detected, and superimposed display positions are corrected in association with focusing and zooming. The displaying of the visible-light image is continued even during the detection of Raman scattering.

公开(公告)号：US20240153763A1

公开(公告)日：2024-05-09

申请号：US18486471

申请日：2023-10-13

Applicant: Massachusetts Institute of Technology ,  The Government of the United States of America, as Represented by the Secretary of the Navy ,  ROHM Co. Ltd.

Inventor： Rachael L. Myers-Ward ,  Jeehwan Kim ,  Kuan Qiao ,  Wei Kong ,  David Kurt Gaskill ,  Takuji Maekawa ,  Noriyuki Masago

IPC: H01L21/02

CPC classification number: H01L21/02529 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02598 ,  H01L21/0262

Abstract: Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride, and related articles, are generally described. In some embodiments, a SiC film is fabricated over a layer comprising graphene and/or hexagonal boron nitride, which in turn is disposed over a substrate. The layer and/or the substrate may be lattice-matched with the SiC film to reduce defect density in the SiC film. The fabricated SiC film may then be removed from the substrate via, for example, a stressor attached to the SiC film. In certain cases, the layer serves as a reusable platform for growing SiC films and also serves a release layer that allows fast, precise, and repeatable release at the layer surface.

公开(公告)号：US20160077008A1

公开(公告)日：2016-03-17

申请号：US14785902

申请日：2014-08-21

Applicant: ROHM CO., LTD.

Inventor： Hidemi Takasu ,  Toshihisa Maeda ,  Masahide Tanaka ,  Takuji Maekawa

IPC: G01N21/65 ,  G02B27/01 ,  G06T7/00 ,  H04N5/225 ,  H04N13/04

CPC classification number: G01N21/65 ,  A61B1/00048 ,  A61B1/0005 ,  A61B1/00186 ,  A61B1/00193 ,  A61B1/0638 ,  A61B5/0075 ,  A61B5/7445 ,  G01J3/0208 ,  G01J3/0237 ,  G01J3/0248 ,  G01J3/0264 ,  G01J3/2823 ,  G01J3/4412 ,  G02B5/208 ,  G02B27/0172 ,  G02B2027/0134 ,  G02B2027/0141 ,  G02B2027/0178 ,  G06T7/0012 ,  G06T2207/10048 ,  G06T2207/30096 ,  H04N5/2256 ,  H04N5/332 ,  H04N13/239 ,  H04N13/254 ,  H04N13/257 ,  H04N13/344

Abstract: A target is irradiated in a time-shared manner with a visible-light-range illumination light source and an infrared laser beam for Raman scattering, and a target image is formed with an image-capturing lens on a CIGS image sensor provided with a visible-light-range filter, a narrow-band infrared filter for Raman-scattered light measurement, and a near-band reference narrow-band infrared filter that does not let Raman-scattered light pass through. In a preliminary measurement, a plurality of normal sections are measured and averaged, and by using the same as a reference, an actual measurement of Raman scattering is performed. In displaying a visible-light image with the CIGS image sensor, superimposed display is performed to specify sections where Raman scattering is detected, and superimposed display positions are corrected in association with focusing and zooming. The displaying of the visible-light image is continued even during the detection of Raman scattering.

Abstract translation: 用可见光范围照明光源和用于拉曼散射的红外激光束以时间共享的方式照射目标，并且在具有可见光的CIGS图像传感器上的图像拍摄透镜上形成目标图像 光范围滤波器，用于拉曼散射光测量的窄带红外滤光器，以及不使拉曼散射光通过的近带参考窄带红外滤光器。 在初步测量中，测量和平均多个正常部分，并且通过使用与其相同的参考，进行拉曼散射的实际测量。 在使用CIGS图像传感器显示可见光图像时，执行叠加显示以指定检测到拉曼散射的部分，并且叠加的显示位置与聚焦和变焦相关联地被校正。 即使在拉曼散射检测期间，也可以继续显示可见光图像。

公开(公告)号：US12074201B2

公开(公告)日：2024-08-27

申请号：US17588558

申请日：2022-01-31

Applicant: ROHM CO., LTD.

Inventor： Takuji Maekawa ,  Mitsuru Morimoto

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02529 ,  H01L21/02595 ,  H01L29/045 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/872

Abstract: A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer of the first layer by means of CVD growth, the drift layer of the first layer is formed by means of epitaxial growth, and accordingly, defects occurring at a junction interface of the semiconductor substrate including the single crystal SiC layer and the polycrystal SiC layer are suppressed, and manufacturing costs are also reduced.

公开(公告)号：US12040363B2

公开(公告)日：2024-07-16

申请号：US17588558

申请日：2022-01-31

Applicant: ROHM CO., LTD.

Inventor： Takuji Maekawa ,  Mitsuru Morimoto

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02529 ,  H01L21/02595 ,  H01L29/045 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/872

Abstract: A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer of the first layer by means of CVD growth, the drift layer of the first layer is formed by means of epitaxial growth, and accordingly, defects occurring at a junction interface of the semiconductor substrate including the single crystal SiC layer and the polycrystal SiC layer are suppressed, and manufacturing costs are also reduced.

公开(公告)号：US09496433B2

公开(公告)日：2016-11-15

申请号：US14436075

申请日：2013-10-10

Applicant: ROHM CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Takuji Maekawa ,  Shigeru Niki ,  Shogo Ishizuka ,  Hajime Shibata

IPC: H01L31/0272 ,  H01L31/065 ,  C23C14/34 ,  H01L31/032 ,  H01L31/10 ,  H01L31/0224 ,  H01L31/0392 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/14694 ,  H01L31/022466 ,  H01L31/03923 ,  H01L31/10 ,  H01L31/18 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.

Abstract translation: 本发明的光电转换装置包括基板，设置在基板上的下电极层，设置在下电极层上的覆盖下电极层的CIGS化合物半导体层和设置在化合物半导体层上的透明电极层，其中， 化合物半导体层的最大Ga含量变化量在层厚度方向上测定为5％以上，最大含量变化量在层厚度方向上测定为6％以上。

公开(公告)号：US08963272B2

公开(公告)日：2015-02-24

申请号：US13918042

申请日：2013-06-14

Applicant: Rohm Co., Ltd.

Inventor： Takuji Maekawa ,  Osamu Matsushima ,  Toshihisa Maeda

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L31/02164 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer.

Abstract translation: 根据本发明的光电转换器包括基板，布置在基板上的下电极层，布置在下电极层上以覆盖下电极层并划分成多个像素的黄铜矿结构的化合物半导体层， 配置在化合物半导体层上的透明电极层，以及配置在化合物半导体层上的各像素周围的屏蔽层。