公开(公告)号：US20250105834A1

公开(公告)日：2025-03-27

申请号：US18885982

申请日：2024-09-16

Applicant: ROHM CO., LTD.

Inventor： Makoto SADA ,  Katsuaki YAMADA ,  Shuntaro TAKAHASHI ,  Toru TAKUMA ,  Naoki TAKAHASHI

IPC: H03K17/082

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a semiconductor substrate; a well, formed in the semiconductor substrate; an output terminal, electrically connected to the semiconductor substrate; a ground terminal, configured to receive a ground voltage; a detection signal generating circuit, configured to generate a negative current detection signal when an output voltage present at the output terminal is detected to be less than the ground voltage; and a control circuit, configured to apply the ground voltage or the output voltage to the well in response to the negative current detection signal. The detection signal generating circuit includes: a comparator, configured to generate the negative current detection signal by comparing an output detection voltage with the ground voltage or the threshold voltage; a bias circuit, configured to switch between applying the output voltage or a bias voltage as the output detection voltage; and a clamp circuit.

公开(公告)号：US20240097677A1

公开(公告)日：2024-03-21

申请号：US18463610

申请日：2023-09-08

Applicant: ROHM CO., LTD.

Inventor： Naoki TAKAHASHI ,  Shuntaro TAKAHASHI

IPC: H03K17/687 ,  B60R16/03

CPC classification number: H03K17/687 ,  B60R16/03

Abstract: A switching device, for example, includes a P-type semiconductor substrate configured to be fed with a ground voltage, a switching element connected between an application terminal for a supply voltage and an application terminal for an output voltage, a driver configured to turn on and off the switching element, and an active clamp circuit configured to control the switching element so as to keep the output voltage at an off transition of the switching element equal to or higher than a lower limit voltage lower than the ground voltage by an active clamp voltage.

公开(公告)号：US20230216289A1

公开(公告)日：2023-07-06

申请号：US18181064

申请日：2023-03-09

Applicant: Rohm Co. Ltd.

Inventor： Toru TAKUMA ,  Naoki TAKAHASHI ,  Shuntaro TAKAHASHI

IPC: H02H1/00 ,  H02H3/093 ,  B60R16/02 ,  H02H3/087 ,  H02H7/20 ,  B60R16/03

CPC classification number: H02H1/0007 ,  H02H3/093 ,  B60R16/02 ,  H02H3/087 ,  H02H7/20 ,  B60R16/03 ,  H02H7/205

Abstract: In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (∝ Iref) and a second set value (∝ Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (∝ Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.

公开(公告)号：US20230387888A1

公开(公告)日：2023-11-30

申请号：US18448285

申请日：2023-08-11

Applicant: ROHM CO., LTD.

Inventor： Naoki TAKAHASHI

IPC: H03K3/011 ,  H01L29/40 ,  H01L29/78 ,  H03K17/687

CPC classification number: H03K3/011 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/7815 ,  H03K17/6871

Abstract: A semiconductor device includes first and second insulated-gate transistors in parallel with each other, a charger-discharger, and a gate voltage correction circuit. The charger-discharger can perform first control to charge both of the gates of the first and second transistors, second control to discharge both of the gates of the first and second transistors, and third control to charge one of the gates of the first and second transistors. The gate voltage correction circuit corrects the gate voltages of the first and second transistors to eliminate the difference between those voltages in at least one of the first control, the second control, and protection operation in which the first and second transistors are forcibly kept off.

公开(公告)号：US20200258880A1

公开(公告)日：2020-08-13

申请号：US16787643

申请日：2020-02-11

Applicant: Rohm Co., Ltd.

Inventor： Naoki TAKAHASHI

IPC: H01L27/02

Abstract: A semiconductor device has an N-type substrate, a through conductor penetrating the N-type substrate, a protection target circuit provided on the N-type substrate, and an ESD protection circuit provided on the N-type substrate. The protection target circuit and the ESD protection circuit are connected together to the through conductor.

公开(公告)号：US20250030358A1

公开(公告)日：2025-01-23

申请号：US18776934

申请日：2024-07-18

Applicant: ROHM CO., LTD.

Inventor： Naoki TAKAHASHI

IPC: H02P3/08

Abstract: A motor driver for driving a motor includes: a half-bridge output stage including a high-side transistor and a low-side transistor, the motor being connected to a connection terminal to which the high-side transistor and the low-side transistor are connected; and a control circuit configured to monitor a terminal voltage of the connection terminal. The control circuit is configured to turn off the high-side transistor and turn on the low-side transistor, and initiate a brake mode to stop the motor. In the brake mode, when the terminal voltage is lower than a first setting voltage, the control circuit is configured to connect the connection terminal to an electric potential capable of maintaining the motor in a stopped state with the high-side transistor and the low-side transistor turned off.

公开(公告)号：US20180048140A1

公开(公告)日：2018-02-15

申请号：US15672958

申请日：2017-08-09

Applicant: Rohm Co., Ltd.

Inventor： Toru TAKUMA ,  Shuntaro TAKAHASHI ,  Naoki TAKAHASHI

IPC: H02H3/08 ,  H02H9/02 ,  G06F1/30 ,  B60R16/02 ,  H03K19/003 ,  G05F1/573

CPC classification number: H02H3/08 ,  B60R16/02 ,  G05F1/573 ,  G06F1/305 ,  H02H9/02 ,  H02H9/025 ,  H03K19/00315

Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.