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    COMPOSITIONS AND METHODS FOR PATTERN TREATMENT
    4.
    发明申请
    COMPOSITIONS AND METHODS FOR PATTERN TREATMENT 有权
    用于图案处理的组合物和方法

    公开(公告)号：US20160357112A1

    公开(公告)日：2016-12-08

    申请号：US15172276

    申请日：2016-06-03

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Vipul Jain ,  Mingqi Li ,  Huaxing Zhou ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

    IPC: G03F7/40

    CPC classification number: G03F7/11 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/165 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0274

    Abstract: Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

    Abstract translation: 图案处理组合物包含嵌段共聚物和有机溶剂。 嵌段共聚物包括第一嵌段和第二嵌段。 第一块包括由包含烯键式不饱和可聚合基团和氢受体基团的第一单体形成的单元，其中氢受体基团是含氮基团。 第二块包括由包含烯键式不饱和可聚合基团和芳族基团的第二单体形成的单元，条件是第二单体不是苯乙烯。 （i）第二块包含由包含烯键式不饱和可聚合基团的第三单体形成的单元，第二单体和第三单体不同; 和/或（ii）嵌段共聚物包括第三嵌段，其包含由包含烯属不饱和可聚合基团的第四单体形成的单元。 还提供了使用所述组合物的图案处理方法。 图案处理组合物和方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

    PATTERN TREATMENT METHODS
    5.
    发明申请
    PATTERN TREATMENT METHODS 有权
    模式处理方法

    公开(公告)号：US20160357109A1

    公开(公告)日：2016-12-08

    申请号：US15172228

    申请日：2016-06-03

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Vipul Jain ,  Mingqi Li ,  Huaxing Zhou ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

    IPC: G03F7/40 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20

    CPC classification number: G03F7/165 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0274

    Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

    Abstract translation: 图案处理方法包括：（a）在其表面上提供包括图案化特征的半导体衬底; （b）将图案处理组合物施加到所述图案化特征，其中所述图案处理组合物包含嵌段共聚物和溶剂，其中所述嵌段共聚物包含第一嵌段和第二嵌段，其中所述第一嵌段包含由第一嵌段 包含烯键式不饱和可聚合基团和氢受体基团的单体，其中所述氢受体基团是含氮基团，并且所述第二嵌段包含由包含烯属不饱和可聚合基团和芳族基团的第二单体形成的单元，条件是 第二单体不是苯乙烯; 和（c）从基材漂洗残余图案处理组合物，使一部分嵌段共聚物结合到图案化特征。 该方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

    COMPOSITIONS AND METHODS FOR PATTERN TREATMENT
    8.
    发明申请
    COMPOSITIONS AND METHODS FOR PATTERN TREATMENT 有权
    用于图案处理的组合物和方法

    公开(公告)号：US20160357111A1

    公开(公告)日：2016-12-08

    申请号：US15172260

    申请日：2016-06-03

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Vipul Jain ,  Mingqi Li ,  Huaxing Zhou ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

    IPC: G03F7/40

    CPC classification number: G03F7/405 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/165 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274

    Abstract: Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group, wherein the fourth monomer is different from the first monomer and the second monomer. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

    Abstract translation: 图案处理组合物包含嵌段共聚物和有机溶剂。 嵌段共聚物包括第一嵌段和第二嵌段。 第一块包括由包含烯键式不饱和可聚合基团和氢受体基团的第一单体形成的单元，其中氢受体基团是含氮基团。 第二块包括由包含烯键式不饱和可聚合基团和环状脂肪族基团的第二单体形成的单元。 （i）第二块包含由包含烯键式不饱和可聚合基团的第三单体形成的单元，第二单体和第三单体不同; 和/或（ii）嵌段共聚物包括第三嵌段，其包含由包含烯键式不饱和可聚合基团的第四单体形成的单元，其中第四单体不同于第一单体和第二单体。 还提供了使用所述组合物的图案处理方法。 图案处理组合物和方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

    Topcoat compositions and pattern-forming methods
    9.
    发明授权
    Topcoat compositions and pattern-forming methods 有权

    公开(公告)号：US10042259B2

    公开(公告)日：2018-08-07

    申请号：US15730876

    申请日：2017-10-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder Kaur ,  Cong Liu ,  Doris Kang ,  Mingqi Li ,  Deyan Wang ,  Huaxing Zhou

    IPC: G03F7/11 ,  C08F20/34 ,  C08F222/40 ,  C08L33/16 ,  C09D133/08 ,  C09D133/10 ,  C09D133/16 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    Abstract: Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

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