公开(公告)号：US20140186772A1

公开(公告)日：2014-07-03

申请号：US14145207

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Gerhard POHLERS ,  Cheng-Bai XU ,  Kevin ROWELL

IPC: G03F7/40

CPC classification number: G03F7/405 ,  G03F7/0397

Abstract: Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了修整光致抗蚀剂图案的方法。 所述方法包括：（a）提供半导体衬底; （b）在所述基底上形成光致抗蚀剂图案，其中所述光致抗蚀剂图案由化学放大的光致抗蚀剂组合物形成，所述光致抗蚀剂图案包含：包含酸不稳定基团的基质聚合物; 光致酸发生器; 和溶剂; （c）在光致抗蚀剂图案上在基底上涂覆光致抗蚀剂修饰组合物，其中修剪组合物包含：基体聚合物，不含氟的芳族酸; 和溶剂; （d）加热涂覆的基材，从而在光致抗蚀剂图案的表面区域中引起光致抗蚀剂基质聚合物的极性变化; 和（e）使光致抗蚀剂图案与漂洗剂接触以除去光致抗蚀剂图案的表面区域，从而形成修整的光致抗蚀剂图案。 该方法在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20150212414A1

公开(公告)日：2015-07-30

申请号：US13691689

申请日：2012-11-30

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Gerhard POHLERS ,  Cong LIU ,  Cheng-Bai XU ,  Kevin ROWELL ,  Irvinder KAUR

IPC: G03F7/039 ,  G03F7/30 ,  G03F7/16 ,  C07D333/48 ,  G03F7/20

CPC classification number: G03F7/40 ,  C07C309/03 ,  C07C309/06 ,  C07D239/26 ,  C07D241/12 ,  C07D263/32 ,  C07D277/22 ,  C07D333/48 ,  G03F7/0397 ,  G03F7/09 ,  G03F7/091 ,  G03F7/11 ,  G03F7/30 ,  G03F7/405

Abstract: New ionic thermal acid generator compounds are provided. Also provided are photoresist compositions, antireflective coating compositions, and chemical trim overcoat compositions, and methods of using the compositions.

Abstract translation: 提供新的离子热酸发生剂化合物。 还提供了光致抗蚀剂组合物，抗反射涂料组合物和化学修饰外涂层组合物，以及使用该组合物的方法。

公开(公告)号：US20150185620A1

公开(公告)日：2015-07-02

申请号：US14586945

申请日：2014-12-30

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong LIU ,  Seung-Hyun LEE ,  Kevin ROWELL ,  Gerhard POHLERS ,  Cheng-Bai XU ,  Wenyan YIN ,  Thomas A. ESTELLE ,  Shintaro YAMADA

IPC: G03F7/40

CPC classification number: G03F7/405 ,  G03F7/0392

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了用于修整光致抗蚀剂图案的组合物和方法。 光致抗蚀剂图案修剪组合物包括：基质聚合物，其包含由以下通式（I）的单体形成的单元：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; R2选自C1-C15亚烷基; 并且R 3选自C 1 -C 3氟代烷基; 不含氟的芳香族酸; 和溶剂。 组合物和方法在半导体器件的制造中具有特别的适用性。