中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.018 seconds)

    PATTERN FORMATION METHODS
    3.
    发明申请
    PATTERN FORMATION METHODS 审中-公开
    模式形成方法

    公开(公告)号：US20160124309A1

    公开(公告)日：2016-05-05

    申请号：US14927354

    申请日：2015-10-29

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Choong-Bong LEE ,  Stefan J. CAPORALE ,  Jason A. DeSISTO ,  Jong Keun PARK ,  Cong LIU ,  Cheng-Bai XU ,  Cecily ANDES

    IPC: G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/16

    CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/281 ,  C08F2220/283 ,  C09D133/08 ,  C09D133/14 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38

    Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

    Abstract translation: 形成电子器件的方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一个或多个层上形成光致抗蚀剂层，其中光致抗蚀剂层由组合物形成，所述组合物包括：包含具有酸不稳定基团的单元的基质聚合物; 光致酸发生器; 和有机溶剂; （c）在光致抗蚀剂层上涂覆光致抗蚀剂外涂层组合物，其中外涂层组合物包含：基体聚合物; 添加剂聚合物; 一个基本的猝灭剂; 和有机溶剂; 其中所述添加剂聚合物具有比所述基体聚合物的表面能更低的表面能，并且其中所述添加剂聚合物以所述外涂层组合物的总固体为基准存在于所述外涂层组合物中的量为1至20重量％; （d）将光致抗蚀剂层暴露于活化辐射; （e）在曝光后烘烤过程中加热基材; 和（f）用有机溶剂显影剂显影曝光的膜。 该方法在半导体制造业中具有特殊的适用性。

    HARDMASK
    5.
    发明申请
    HARDMASK 有权

    公开(公告)号：US20140087066A1

    公开(公告)日：2014-03-27

    申请号：US13624946

    申请日：2012-09-23

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Deyan WANG ,  Jibin SUN ,  Peng-Wei CHUANG ,  Peter TREFONAS, III ,  Cong LIU

    IPC: B05D5/12 ,  C08F30/04

    CPC classification number: C08F220/10 ,  C08F220/18 ,  G03F7/091 ,  G03F7/094

    Abstract: Compositions containing certain organometallic oligomers suitable for use as spin-on, metal hardmasks are provided, where such compositions can be tailored to provide a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the present compositions.

    Abstract translation: 提供了包含适合用作旋涂金属硬掩模的某些有机金属低聚物的组合物，其中可以调整这些组合物以提供具有一定范围的蚀刻选择性的金属氧化物硬掩模。 还提供了使用本发明组合物沉积金属氧化物硬掩模的方法。

    PHOTORESISTS COMPRISING AMIDE COMPONENT
    7.
    发明申请
    PHOTORESISTS COMPRISING AMIDE COMPONENT 审中-公开
    包含AMIDE组件的电影

    公开(公告)号：US20130344439A1

    公开(公告)日：2013-12-26

    申请号：US13926764

    申请日：2013-06-25

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Chunyi WU ,  Gerhard POHLERS ,  Gregory P. PROKOPOWICZ ,  Mingqi LI ,  Cheng-Bai XU

    IPC: G03F7/004

    Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer

    Abstract translation: 提供了新的光致抗蚀剂组合物，其包含包含酰胺基和多个羟基的组分。 本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 和具有多个羟基的酰胺组分，其可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光生酸扩散的作用

    TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS
    8.
    发明申请
    TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS 审中-公开
    TOPCOAT组合物和光刻方法

    公开(公告)号：US20160130462A1

    公开(公告)日：2016-05-12

    申请号：US14929533

    申请日：2015-11-02

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Doris H. KANG ,  Deyan WANG ,  Cheng-Bai XU ,  Mingqi LI

    IPC: C09D133/16 ,  G03F7/11 ,  G03F7/20

    CPC classification number: C09D133/16 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041

    Abstract: A topcoat composition comprises: a matrix polymer; a surface active polymer comprising: a first unit comprising a group of the following general formula (I): wherein R1 represents H, F, C1 to C8 alkyl or C1 to C8 fluoroalkyl, optionally comprising one or more heteroatom; X1 represents oxygen, sulfur or NR2, wherein R2 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and a solvent. The surface active polymer is present in the composition in an amount less than the matrix polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

    Abstract translation: 面漆组合物包括：基质聚合物; 一种表面活性聚合物，其包含：包含以下通式（I）的基团的第一单元：其中R 1表示H，F，C 1至C 8烷基或C 1至C 8氟代烷基，任选地包含一个或多个杂原子; X 1表示氧，硫或NR 2，其中R 2选自氢和任选取代的C 1至C 10烷基; 和溶剂。 表面活性聚合物以小于基质聚合物的量存在于组合物中，并且表面活性聚合物具有比基质聚合物的表面能更低的表面能。 本发明在半导体器件的制造中作为光致抗蚀剂顶涂层的光刻工艺具有特别的适用性。

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS
    10.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS 有权
    光电子图案修剪组合物和方法

    公开(公告)号：US20150185620A1

    公开(公告)日：2015-07-02

    申请号：US14586945

    申请日：2014-12-30

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Seung-Hyun LEE ,  Kevin ROWELL ,  Gerhard POHLERS ,  Cheng-Bai XU ,  Wenyan YIN ,  Thomas A. ESTELLE ,  Shintaro YAMADA

    IPC: G03F7/40

    CPC classification number: G03F7/405 ,  G03F7/0392

    Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供了用于修整光致抗蚀剂图案的组合物和方法。 光致抗蚀剂图案修剪组合物包括：基质聚合物，其包含由以下通式（I）的单体形成的单元：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; R2选自C1-C15亚烷基; 并且R 3选自C 1 -C 3氟代烷基; 不含氟的芳香族酸; 和溶剂。 组合物和方法在半导体器件的制造中具有特别的适用性。

Patent Agency Ranking