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    ION IMPLANTATION METHODS
    1.
    发明申请
    ION IMPLANTATION METHODS 有权
    离子植入方法

    公开(公告)号：US20150214056A1

    公开(公告)日：2015-07-30

    申请号：US14145674

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai XU ,  Cheng Han WU ,  Dong Won CHUNG ,  Yoshihiro YAMAMOTO ,  George G. BARCLAY ,  Gerhard POHLERS

    IPC: H01L21/266 ,  H01L21/02 ,  H01L21/3105

    CPC classification number: H01L21/266 ,  G03F7/091 ,  G03F7/405 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

    Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供了在半导体器件中形成离子注入区域的方法。 所述方法包括：（a）提供具有要离子注入的多个区域的半导体衬底; （b）在半导体衬底上形成光致抗蚀剂图案，其中光致抗蚀剂图案由包含具有酸不稳定基团的基质聚合物，光致酸产生剂和溶剂的化学放大光致抗蚀剂组合物形成; （c）在所述光致抗蚀剂图案上涂覆去除组合物，其中所述去除组合物包含：基体聚合物; 选自热酸发生剂，光酸产生剂及其组合的酸发生剂; 和溶剂; （d）将所述涂覆的半导体衬底暴露于所述除酸组合物中从所述酸产生器产生酸的条件; （e）使涂覆的半导体衬底与漂洗剂接触以从衬底去除残留的去除组合物和浮渣; 和（f）使用光刻胶图案作为植入物掩模离子注入半导体衬底的多个区域。 该方法在半导体器件的制造中具有特别的适用性。

    PHOTORESIST PATTERN TRIMMING METHODS
    4.
    发明申请
    PHOTORESIST PATTERN TRIMMING METHODS 审中-公开
    光电图案修剪方法

    公开(公告)号：US20140186772A1

    公开(公告)日：2014-07-03

    申请号：US14145207

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Gerhard POHLERS ,  Cheng-Bai XU ,  Kevin ROWELL

    IPC: G03F7/40

    CPC classification number: G03F7/405 ,  G03F7/0397

    Abstract: Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供了修整光致抗蚀剂图案的方法。 所述方法包括：（a）提供半导体衬底; （b）在所述基底上形成光致抗蚀剂图案，其中所述光致抗蚀剂图案由化学放大的光致抗蚀剂组合物形成，所述光致抗蚀剂图案包含：包含酸不稳定基团的基质聚合物; 光致酸发生器; 和溶剂; （c）在光致抗蚀剂图案上在基底上涂覆光致抗蚀剂修饰组合物，其中修剪组合物包含：基体聚合物，不含氟的芳族酸; 和溶剂; （d）加热涂覆的基材，从而在光致抗蚀剂图案的表面区域中引起光致抗蚀剂基质聚合物的极性变化; 和（e）使光致抗蚀剂图案与漂洗剂接触以除去光致抗蚀剂图案的表面区域，从而形成修整的光致抗蚀剂图案。 该方法在半导体器件的制造中具有特别的适用性。

    PHOTORESISTS COMPRISING AMIDE COMPONENT
    5.
    发明申请
    PHOTORESISTS COMPRISING AMIDE COMPONENT 审中-公开
    包含AMIDE组件的电影

    公开(公告)号：US20130344439A1

    公开(公告)日：2013-12-26

    申请号：US13926764

    申请日：2013-06-25

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Chunyi WU ,  Gerhard POHLERS ,  Gregory P. PROKOPOWICZ ,  Mingqi LI ,  Cheng-Bai XU

    IPC: G03F7/004

    Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer

    Abstract translation: 提供了新的光致抗蚀剂组合物，其包含包含酰胺基和多个羟基的组分。 本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 和具有多个羟基的酰胺组分，其可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光生酸扩散的作用

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS
    6.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS 有权
    光电子图案修剪组合物和方法

    公开(公告)号：US20150185620A1

    公开(公告)日：2015-07-02

    申请号：US14586945

    申请日：2014-12-30

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong LIU ,  Seung-Hyun LEE ,  Kevin ROWELL ,  Gerhard POHLERS ,  Cheng-Bai XU ,  Wenyan YIN ,  Thomas A. ESTELLE ,  Shintaro YAMADA

    IPC: G03F7/40

    CPC classification number: G03F7/405 ,  G03F7/0392

    Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

    Abstract translation: 提供了用于修整光致抗蚀剂图案的组合物和方法。 光致抗蚀剂图案修剪组合物包括：基质聚合物，其包含由以下通式（I）的单体形成的单元：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; R2选自C1-C15亚烷基; 并且R 3选自C 1 -C 3氟代烷基; 不含氟的芳香族酸; 和溶剂。 组合物和方法在半导体器件的制造中具有特别的适用性。

    PHOTORESISTS COMPRISING IONIC COMPOUND
    7.
    发明申请
    PHOTORESISTS COMPRISING IONIC COMPOUND 审中-公开
    包含离子化合物的光电

    公开(公告)号：US20140120470A1

    公开(公告)日：2014-05-01

    申请号：US13665232

    申请日：2012-10-31

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Gerhard POHLERS ,  Cong LIU ,  Cheng-Bai XU ,  Chunyi WU

    IPC: G03F7/038 ,  G03F7/20

    Abstract: New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

    Abstract translation: 提供了新的光致抗蚀剂组合物，其包含包含辐射不敏感的离子化合物的组分。 本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 以及辐射不敏感的离子化合物，其可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光生酸扩散的作用。

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