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1.发明授权Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode 有权具有软恢复特性的耐浪涌电流半导体二极管及制造半导体二极管的方法公开(公告)号：US08476712B2
公开(公告)日：2013-07-02
申请号：US12894239
申请日：2010-09-30
IPC分类号： H01L23/62
CPC分类号： H01L29/73 , H01L29/66136 , H01L29/861 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
摘要翻译： 双极半导体元件，特别是二极管，其包括以取决于电流密度的方式控制其发射极效率的阳极结构，使得发射极效率在小电流密度下低，并且在大电流密度下足够高，以及 可选择的阴极结构，其可以在换向期间注入额外的孔，以及其制造方法。
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2.发明申请Surge-Current-Resistant Semiconductor Diode With Soft Recovery Behavior and Methods for Producing a Semiconductor Diode 有权具有软恢复行为的浪涌电流半导体二极管和用于生产半导体二极管的方法公开(公告)号：US20120018846A1
公开(公告)日：2012-01-26
申请号：US12894239
申请日：2010-09-30
IPC分类号： H01L29/73 , H01L21/265
CPC分类号： H01L29/73 , H01L29/66136 , H01L29/861 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
摘要翻译： 双极半导体元件，特别是二极管，其包括以取决于电流密度的方式控制其发射极效率的阳极结构，使得发射极效率在小电流密度下低，并且在大电流密度下足够高，以及 可选择的阴极结构，其可以在换向期间注入额外的孔，以及其制造方法。
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3.发明授权Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的n掺杂半导体区域的方法公开(公告)号：US08101506B2
公开(公告)日：2012-01-24
申请号：US12719487
申请日：2010-03-08
IPC分类号： H01L21/322
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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4.发明授权Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法公开(公告)号：US07675108B2
公开(公告)日：2010-03-09
申请号：US11201874
申请日：2005-08-11
IPC分类号： H01L29/78
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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5.发明申请Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法公开(公告)号：US20060043470A1
公开(公告)日：2006-03-02
申请号：US11201874
申请日：2005-08-11
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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6.发明申请METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT 有权在半导体体和半导体元件中生产掺杂的N掺杂的半导体区的方法公开(公告)号：US20100167509A1
公开(公告)日：2010-07-01
申请号：US12719487
申请日：2010-03-08
IPC分类号： H01L21/263
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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公开(公告)号：US08587059B2
公开(公告)日：2013-11-19
申请号：US13092546
申请日：2011-04-22
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/7803 , H01L29/8083
摘要： A semiconductor arrangement includes a MOSFET having a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region. The semiconductor arrangement further includes a normally-off JFET having a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region.
摘要翻译： 半导体装置包括具有第一导电类型的源极区域，漂移区域和漏极区域的MOSFET，设置在源极区域和漂移区域之间的第二导电类型的体区域，邻近体区域布置的栅电极 并通过栅极电介质与体区电介质绝缘，以及与源区和身体区接触的源电极。 该半导体装置还包括常闭JFET，其具有第一导电类型的沟道区，该沟道区耦合在源电极和漂移区之间并且在身体区附近延伸，使得在体区和通道之间形成pn结 地区。
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公开(公告)号：US08502315B2
公开(公告)日：2013-08-06
申请号：US13463243
申请日：2012-05-03
IPC分类号： H01L29/78
CPC分类号： H01L29/66719 , H01L29/0878 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/513 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.
摘要翻译： 半导体器件包括源极，漏极和被配置为选择性地使电流在源极和漏极之间通过的栅极。 半导体器件包括源极和漏极之间的漂移区和邻近漂移区的第一场板。 半导体器件包括将第一场板与漂移区电隔离的电介质层，并且电介质层内的电荷接近靠近漂移区的电介质层的界面。
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公开(公告)号：US07582531B2
公开(公告)日：2009-09-01
申请号：US11364882
申请日：2006-02-28
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/263 , H01L21/761 , H01L27/0623 , H01L27/088 , H01L27/0922 , H01L29/0878 , H01L29/407 , H01L29/41741 , H01L29/66734
摘要： A method for producing a region of increased doping in an n-doped semiconductor layer which is buried in a semiconductor body of a vertical power transistor and which is arranged between a p-doped body region facing the front side contact of the power transistor and an n-doped substrate facing the rear side contact of the power transistor has the following steps: a) irradiation of at least one part of the surface of the semiconductor body with protons, and b) heat treatment of the semiconductor body.
摘要翻译： 一种在n掺杂半导体层中产生增加的掺杂区域的方法，该n掺杂半导体层被埋在垂直功率晶体管的半导体本体中并且被布置在面向功率晶体管的前侧接触的p掺杂体区域和 面向功率晶体管的后侧接触的n掺杂衬底具有以下步骤：a）用质子照射半导体主体的至少一部分表面，以及b）半导体本体的热处理。
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10.发明申请Field effect controllable semiconductor component with improved inverse diode and production methods therefor 有权具有改进的反向二极管的场效应可控半导体元件及其制造方法公开(公告)号：US20060211179A1
公开(公告)日：2006-09-21
申请号：US11364891
申请日：2006-02-28
IPC分类号： H01L21/332
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/7805
摘要： The invention relates to a semiconductor component, which comprises a semiconductor body having a first and a second terminal zone of a first conduction type (n), a channel zone of a second conduction type (p), which is short circuited with the second terminal zone, a drift zone of the first conduction type (n) with weaker doping than the terminal zones, which drift zone is formed between the channel zone and the first terminal zone, the channel zone being formed between the drift zone and the second terminal zone, a control electrode, formed so that it is insulated from the channel zone, for controlling a conductive channel in the channel zone between the second terminal zone and the drift zone, and is distinguished in that a field stop zone of the first conduction type (n) is formed between the first terminal zone and the drift zone, the field stop zone having heavier doping than the drift zone and weaker doping than the first terminal zone, the maximum doping of the field stop zone being at most a factor of about 102 heavier than the doping of the drift zone.
摘要翻译： 本发明涉及一种半导体元件，其包括具有第一导电类型（n）的第一和第二端子区，与第二端子短路的第二导电类型（p）的沟道区的半导体本体 区域，具有比端子区域弱的掺杂的第一导电类型（n）的漂移区，在沟道区和第一端区之间形成漂移区，沟道区形成在漂移区和第二端区之间 形成为与沟道区绝缘的控制电极，用于控制第二端子区与漂移区之间的沟道区中的导电沟道，其特征在于，第一导电类型的场阻挡区 n）形成在第一末端区域和漂移区域之间，场停止区域具有比漂移区更重的掺杂和比第一末端区域更弱的掺杂，场停止区域的最大掺杂 至多比漂移区的掺杂重约10倍。
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