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1.发明授权Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode 有权具有软恢复特性的耐浪涌电流半导体二极管及制造半导体二极管的方法公开(公告)号：US08476712B2
公开(公告)日：2013-07-02
申请号：US12894239
申请日：2010-09-30
IPC分类号： H01L23/62
CPC分类号： H01L29/73 , H01L29/66136 , H01L29/861 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
摘要翻译： 双极半导体元件，特别是二极管，其包括以取决于电流密度的方式控制其发射极效率的阳极结构，使得发射极效率在小电流密度下低，并且在大电流密度下足够高，以及 可选择的阴极结构，其可以在换向期间注入额外的孔，以及其制造方法。
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2.发明申请Surge-Current-Resistant Semiconductor Diode With Soft Recovery Behavior and Methods for Producing a Semiconductor Diode 有权具有软恢复行为的浪涌电流半导体二极管和用于生产半导体二极管的方法公开(公告)号：US20120018846A1
公开(公告)日：2012-01-26
申请号：US12894239
申请日：2010-09-30
IPC分类号： H01L29/73 , H01L21/265
CPC分类号： H01L29/73 , H01L29/66136 , H01L29/861 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
摘要翻译： 双极半导体元件，特别是二极管，其包括以取决于电流密度的方式控制其发射极效率的阳极结构，使得发射极效率在小电流密度下低，并且在大电流密度下足够高，以及 可选择的阴极结构，其可以在换向期间注入额外的孔，以及其制造方法。
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3.发明授权Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法公开(公告)号：US07675108B2
公开(公告)日：2010-03-09
申请号：US11201874
申请日：2005-08-11
IPC分类号： H01L29/78
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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4.发明授权Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的n掺杂半导体区域的方法公开(公告)号：US08101506B2
公开(公告)日：2012-01-24
申请号：US12719487
申请日：2010-03-08
IPC分类号： H01L21/322
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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5.发明申请METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT 有权在半导体体和半导体元件中生产掺杂的N掺杂的半导体区的方法公开(公告)号：US20100167509A1
公开(公告)日：2010-07-01
申请号：US12719487
申请日：2010-03-08
IPC分类号： H01L21/263
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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6.发明申请Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法公开(公告)号：US20060043470A1
公开(公告)日：2006-03-02
申请号：US11201874
申请日：2005-08-11
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
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公开(公告)号：US20050161746A1
公开(公告)日：2005-07-28
申请号：US11023040
申请日：2004-12-23
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
IPC分类号： H01L29/08 , H01L29/739 , H01L29/861 , H01L31/109
CPC分类号： H01L29/0834 , H01L29/7395 , H01L29/861
摘要： A semiconductor diode (1, 1′) has an anode (2), a cathode (3) and a semiconductor volume (7) provided between anode (2) and cathode (3). A plurality of semiconductor zones (81 to 84) are formed in the semiconductor volume (7), which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode (3). The semiconductor zones are spaced apart from the cathode (3).
摘要翻译： 半导体二极管（1,1'）具有设置在阳极（2）和阴极（3）之间的阳极（2），阴极（3）和半导体体积（7）。 在半导体体积（7）中形成有多个半导体区域（81〜84），该半导体区域相对于它们的紧邻环境相反地被掺杂，彼此间隔开并设置在阴极（3）附近。 半导体区域与阴极（3）间隔开。
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公开(公告)号：US08354709B2
公开(公告)日：2013-01-15
申请号：US11865316
申请日：2007-10-01
申请人： Hans-Joachim Schulze , Josef Lutz
发明人： Hans-Joachim Schulze , Josef Lutz
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0821 , H01L29/0878 , H01L29/36 , H01L29/41766 , H01L29/73 , H01L29/732 , H01L29/7395 , H01L29/7432 , H01L29/861 , H01L29/87 , H01L29/872
摘要： One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm−3.
摘要翻译： 一个方面是包括端子区的半导体部件; 第一导电类型的漂移区，其比末端区域更弱地掺杂; 漂移区和另一组分区之间的组分结; 以及第一导电类型的载流子补偿区，其布置在漂移区和端区之间，其掺杂浓度低于末端区的掺杂浓度，并且其掺杂浓度至少沿着 从最小掺杂浓度到最大掺杂浓度，最小掺杂浓度大于1016cm-3。
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9.发明申请公开(公告)号：US20070278514A1
公开(公告)日：2007-12-06
申请号：US10587413
申请日：2005-01-24
申请人： Hans-Joachim Schulze , Josef Lutz
发明人： Hans-Joachim Schulze , Josef Lutz
IPC分类号： H01L21/332 , H01L29/72
CPC分类号： H01L21/263 , H01L29/0634 , H01L29/32 , H01L29/861 , H01L29/868
摘要： The invention relates to a semiconductor component comprising a buried temporarily n-doped area (9), which is effective only in the event of turn-off from the conducting to the blocking state of the semiconductor component and prevents chopping of the tail current in order thus to improve the turn-off softness. Said temporarily effective area is created by implantation of K centers (10).
摘要翻译： 本发明涉及一种半导体器件，它包括一个埋置的临时n掺杂区域（9），只有在从半导体器件的导通到阻塞状态的关断的情况下才有效，并且防止尾流的顺序斩波 从而提高关闭的柔软度。 所述临时有效区域是通过植入K个中心（10）产生的。
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10.发明申请公开(公告)号：US20070170514A1
公开(公告)日：2007-07-26
申请号：US11713226
申请日：2007-03-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
IPC分类号： H01L29/76
CPC分类号： H01L29/0834 , H01L29/7395 , H01L29/861
摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.
摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。
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