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公开(公告)号：US4901052A
公开(公告)日：1990-02-13
申请号：US217697
申请日：1988-07-08
摘要： A resistive network formed on a substrate includes film resistors formed of resistive elements, each element having a plurality of portions symmetrically disposed relative to two axes of symmetry. The biaxially symmetric arrangement provides uniform resistance characteristics for the various film resistors, thus improving stability of resistance ratios among resistors of the network. TCR tracking for the film resistors, i.e., the TCR of a ratio of the resistors, is similarly improved. Where the elements of different resistors of the network are interleaved, the temperature of the different resistors is also made more uniform.
摘要翻译： 形成在基板上的电阻网络包括由电阻元件形成的薄膜电阻器，每个元件具有相对于两个对称轴对称设置的多个部分。 双轴对称布置为各种薄膜电阻器提供均匀的电阻特性，从而提高网络电阻器之间的电阻比的稳定性。 类似地改进了薄膜电阻器的TCR跟踪，即电阻器的比率的TCR。 在网络的不同电阻器的元件交错的地方，不同电阻器的温度也变得更均匀。
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公开(公告)号：US4907341A
公开(公告)日：1990-03-13
申请号：US140294
申请日：1987-12-31
IPC分类号： H01C17/232
CPC分类号： H01C17/232 , Y10T29/49082 , Y10T29/49085
摘要： This invention relates to a proces of manufacturing and adjusting a compound resistor. The compound resistor is formed of a resistive material forming a predominant portion of the resistance and having a small negative temperature coefficient of resistance coupled with an adjustment material having an extremely low resistance and a very high positive temperature coefficient of resistance. After forming the resistive and adjustment portions, a portion of the adjustment material is removed to adjust the composite TCR of the compound resistor substantially to zero without significantly affecting resistance.
摘要翻译： 本发明涉及制造和调整复合电阻器的过程。 复合电阻器由形成电阻的主要部分的电阻材料形成，并且具有小的负电阻温度系数与具有极低电阻和非常高的正温度系数电阻的调节材料耦合。 在形成电阻和调整部分之后，去除调整材料的一部分以将复合电阻器的复合TCR基本上调整到零而不显着影响电阻。
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公开(公告)号：US4803457A
公开(公告)日：1989-02-07
申请号：US019669
申请日：1987-02-27
IPC分类号： H01C17/242 , H01C7/00 , H01C17/232 , H01C10/00
CPC分类号： H01C17/232
摘要： A compound resistor is formed of a resistive material making up a predominant portion of the resistance and having a small negative TCR coupled with an adjustment material having an extremely low resistance and a very high positive temperature coefficient of resistance. After the manufacturing process, a portion of the adjustment material is removed to adjust the composite TCR of the compound resistor substantially to zero without significantly affecting the resistance.
摘要翻译： 复合电阻器由构成电阻的主要部分的电阻材料形成，并且具有与具有极低电阻和非常高的正温度系数电阻的调节材料耦合的小的负TCR。 在制造过程之后，去除调整材料的一部分以将复合电阻器的复合TCR基本上调整为零而不显着影响电阻。
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公开(公告)号：US4257061A
公开(公告)日：1981-03-17
申请号：US842972
申请日：1977-10-17
申请人： Roy W. Chapel, Jr. , I. Macit Gurol
发明人： Roy W. Chapel, Jr. , I. Macit Gurol
IPC分类号： G01R19/03 , H01L21/60 , H01L21/76 , H01L21/762 , H01L21/764 , H01L23/14 , H01L23/482 , H01L23/495 , H01L23/498 , H01L27/02 , H01L23/48
CPC分类号： H01L24/85 , G01R19/03 , H01L21/76264 , H01L21/764 , H01L23/147 , H01L23/4822 , H01L23/495 , H01L23/498 , H01L21/76289 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48472 , H01L2224/49171 , H01L2224/85 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0211 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01033 , H01L2924/01043 , H01L2924/01045 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12033 , H01L2924/14 , H01L2924/15787 , H01L2924/19043
摘要： A process for producing thermally isolated monolithic semiconductor die and die produced by the process, plus improved apparatus using the die are disclosed. The process generally comprises the steps of: forming a desired semiconductor component or circuit in a semiconductor wafer (preferably a silicon wafer of crystal orientation) having a protective layer (SiO.sub.2) on one surface; forming platinum silicide contact windows in said protective layer where external connections to the semiconductor component or circuit is necessary; forming support leads of a layer of adhesive material (which also may have resistive properties, such as Nichrome) and a layer of a structurally strong metal of high electrical conductivity and low thermal conductivity (preferably 304 stainless steel) along predetermined paths extending outwardly toward the edge of the die from said contact windows; simultaneously with the forming of the adhesive layer of said support leads, forming one or more thin film resistors in predetermined regions of said die atop said SiO.sub.2 protective layer, if desired; removing said SiO.sub.2 protective layer from a region defined by said support leads, an island or islands in which said semiconductor component or circuit and said resistors are formed and a surrounding frame; and, removing said silicon from the region between said island or islands and said frame. The resulting semiconductor die comprises a frame surrounding one or more islands in which semiconductor components or circuits are formed, and which support resistors, if included. The islands are entirely supported by the support leads extending between the frame and the islands. In addition to providing support, the support leads also provide for electrical connection to the semiconductor components or circuits and to the resistors. The semiconductor die may be mounted in a package that also forms part of the invention. The package includes a ceramic substrate having an aperture in its center and alignment mesas and ridges on one surface. The ceramic substrate is formed so as to be mounted on the metal header of a conventional semiconductor canister housing. Depending upon their specific nature the resulting die are useful in and/or improve a variety of electrical apparatus. They are particularly useful as the dual RMS sensor element of an RMS converter. They can also be formed so as to be useful as radiation sensors. Or, they can be formed so as to provide a thermal platform whose temperature is controlled and stabilized at a predetermined value. All of these dies and the improved circuits resulting from their use also form part of the invention.
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公开(公告)号：US4346291A
公开(公告)日：1982-08-24
申请号：US182966
申请日：1980-09-02
申请人： Roy W. Chapel, Jr. , I. Macit Gurol
发明人： Roy W. Chapel, Jr. , I. Macit Gurol
IPC分类号： G01R19/03 , H01L21/60 , H01L21/762 , H01L21/764 , H01L23/14 , H01L23/482 , H01L23/495 , H01L23/498 , H01L27/02 , G06G7/20
CPC分类号： G01R19/03 , H01L21/76264 , H01L21/764 , H01L23/147 , H01L23/4822 , H01L23/495 , H01L23/498 , H01L24/49 , H01L24/75 , H01L24/85 , H01L21/76289 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48472 , H01L2224/49171 , H01L2224/75 , H01L2224/85 , H01L24/45 , H01L24/48 , H01L27/0211 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01033 , H01L2924/01045 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15312 , H01L2924/15787 , H01L2924/19043
摘要： A process for producing thermally isolated semiconductor die and die produced by the process, plus improved apparatus using the die are disclosed. The process generally comprises the steps of: forming a desired semiconductor component or circuit in a semiconductor wafer (preferably a silicon wafer of crystal orientation) having a protective layer (SiO.sub.2) on one surface; forming platinum silicide contact windows in said protective layer where external connections to the semiconductor component or circuit is necessary; forming support leads of a layer of adhesive material (which also may have resistive properties, such as Nichrome) and a layer of a structurally strong metal of high electrical conductivity and low thermal conductivity (preferably 304 stainless steel) along predetermined paths extending outwardly toward the edge of the die from said contact windows; simultaneously with the forming of the adhesive layer of said support leads, forming one or more thin film resistors in predetermined regions of said die atop said SiO.sub.2 protective layer, if desired; removing said SiO.sub.2 protective layer from a region defined by said support leads, an island or islands in which said semiconductor component or circuit and said resistors are formed and a surrounding frame; and, removing said silicon from the region between said island or islands and said frame. The resulting semiconductor die comprises a frame surrounding one or more islands in which semiconductor components or circuits are formed, and which support resistors, if included. The islands are entirely supported by the support leads extending between the frame and the islands. In addition to providing support, the support leads also provide for electrical connection to the semiconductor components or circuits and to the resistors. The semiconductor die may be mounted in a package that also forms part of the invention. The package includes a ceramic substrate having an aperture in its center and alignment mesas and ridges on one surface. The ceramic substrate is formed so as to be mounted on the metal header of a conventional semiconductor canister housing. Depending upon their specific nature the resulting die are useful in and/or improve a variety of electrical apparatus. They are particularly useful as the dual RMS sensor element of an RMS converter. They can also be formed so as to be useful as radiation sensors. Or, they can be formed so as to provide a thermal platform whose temperature is controlled and stabilized at a predetermined value. All of these dies and the improved circuits resulting from their use also form part of the invention.
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