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    Suction system for sheet guiding cylinders in printing machines
    1.
    发明授权
    Suction system for sheet guiding cylinders in printing machines 失效
    印刷机中纸张引导缸的抽吸系统

    公开(公告)号：US4790244A

    公开(公告)日：1988-12-13

    申请号：US24377

    申请日：1987-03-10

    申请人： Rudolph Otfried ,  Peter Gunter

    发明人： Rudolph Otfried ,  Peter Gunter

    IPC分类号： B41F7/24 ,  B41F7/40 ,  B41F21/10 ,  B41F31/14 ,  B41F31/30 ,  B41F35/00 ,  B41F35/04 ,  B65H5/12 ,  B41F21/06

    CPC分类号： B41F21/108 ,  B65H5/12

    摘要： A suction system is arranged in a sheet guiding cylinder of a printing machine which is switchable from the first form mode to the printing on both sides of the sheet which is turned over by the suction system around its rear edge. The suction system includes an arrangement for automatically controlling suction air for operating a suction head which is movable in a sucker body of the suction system.

    摘要翻译： 抽吸系统布置在打印机的纸张引导筒中，该打印机的纸张导引筒可从第一成形模式切换到通过抽吸系统围绕其后边缘翻转的纸张两侧的打印。 抽吸系统包括用于自动控制吸入空气的装置，用于操作可在抽吸系统的抽吸体中移动的抽吸头。

    Cesium-germanium halide salts forming nonlinear optical crystals
    2.
    发明授权
    Cesium-germanium halide salts forming nonlinear optical crystals 失效
    铯 - 卤化锗盐形成非线性光学晶体

    公开(公告)号：US5721634A

    公开(公告)日：1998-02-24

    申请号：US729219

    申请日：1996-10-09

    申请人： Mark J. Rosker ,  Patricia H. Cunningham ,  Mark D. Ewbank ,  Peter Gunter

    发明人： Mark J. Rosker ,  Patricia H. Cunningham ,  Mark D. Ewbank ,  Peter Gunter

    IPC分类号： G02F1/355 ,  G02F1/35

    CPC分类号： G02F1/3551

    摘要： A family of cesium-germanium halide salts have utility as nonlinear optical crystals in applications including electro-optics and optical frequency conversion. These salts have the general formula CsGeCl.sub.x Br.sub.y I.sub.z, in which x, y, and z equal 0 through 3, inclusive, and where x+y+z=3. In contrast to well-known oxygen-containing materials, such as LiNbO.sub.3, these cesium-germanium halide salts exhibit optical nonlinearity with an extremely wide transparency range (without significant absorption) at wavelengths from about 0.4 .mu.m to greater than 25 .mu.m (covering the entire MWIR and LWIR regions). Based on Ge.sup.2+ ions, these halides have non-centrosymmetric perovskite structures. The halide ions form a strongly coordinating octahedral environment about the Ge.sup.2+ ions and resist migration in an electric field. The Ge2+ ions, however, are shifted slightly off center in the tetragonal phase, leading to a net electric dipole moment in each unit cell. The alignment of these dipole moments into ferroelectric domains can be controlled through applied electric fields. By aligning all dipole moments into a single ferroelectric domain, these cesium-germanium halides have utility for electro-optic and birefringently phase-matched frequency conversion devices. Alternately, periodic poling of the ferroelectric domains allows these materials to be used for quasi-phase-matched frequency conversion. Cesium-germanium halide salts, which can be isolated from aqueous solutions as salts of GeX.sub.3 .sup.- anions, are water-soluble, which facilitates large-aperture crystal growth.

    摘要翻译： 一系列铯 - 卤化锗盐可用作非线性光学晶体，包括电光学和光学频率转换。 这些盐具有通式CsGeClxBryIz，其中x，y和z等于0至3，其中x + y + z = 3。 与众所周知的含氧材料如LiNbO 3相比，这些铯 - 卤化锗盐在波长从约0.4μm到大于25μm的范围内具有非常宽的透明度范围（无显着吸收）的光学非线性（覆盖 整个MWIR和LWIR地区）。 基于Ge 2+离子，这些卤化物具有非中心对称的钙钛矿结构。 卤离子形成关于Ge2 +离子的强配位八面体环境，并在电场中抵抗迁移。 然而，Ge2 +离子在四方相中稍微偏离中心，导致每个晶胞中的净电偶极矩。 可以通过施加的电场来控制这些偶极矩对铁电畴的对准。 通过将所有偶极矩对齐为单个铁电畴，这些铯 - 锗卤化物可用于电光和双折射相位匹配的变频器件。 或者，铁电畴的周期极化允许这些材料用于准相位匹配的频率转换。 可以作为GeX3-阴离子盐的水溶液分离的铯 - 卤化锗盐是水溶性的，这有助于大孔径晶体生长。

    Films of KTN and KTAO.sub.3
    5.
    发明授权
    Films of KTN and KTAO.sub.3 失效
    KTN和KTAO3 + B薄膜

    公开(公告)号：US5476720A

    公开(公告)日：1995-12-19

    申请号：US992952

    申请日：1992-12-18

    申请人： Peter Gunter ,  Roland Gutmann ,  Jurg Hulliger

    发明人： Peter Gunter ,  Roland Gutmann ,  Jurg Hulliger

    IPC分类号： C04B35/495 ,  C04B35/622 ,  B32B18/00

    CPC分类号： C04B35/495 ,  C04B35/62218 ,  Y10T428/12993

    摘要： The invention relates to new films for applying to a substrate and to methods for producing them.A composition, for use in preparing a film, (preferably an epitactic film) comprising a solid solution of KNbO.sub.3 and KTaO.sub.3 forming a product of formula IK.sub.1-y M.sub.y Ta.sub.1-x Nb.sub.x O.sub.3 (I)in which M is a monovalent metal ion other than K.sup.+ (hereinafter defined as the dopant);y=0.02 to 0.20 andx=0.05 to 0.95.

    摘要翻译： 本发明涉及用于涂布于基材上的新膜及其制造方法。 包含KNbO 3和KTaO 3的固溶体（优选为外延膜）的组合物，其形成式I K1-yMyTa1-xNbxO3（I）的产物，其中M是K +以外的一价金属离子 以下定义为掺杂剂）; y = 0.02〜0.20和x = 0.05〜0.95。

    Ferroelectric Thin Films and Devices Comprising Thin Ferroelectric Films
    7.
    发明申请
    Ferroelectric Thin Films and Devices Comprising Thin Ferroelectric Films 审中-公开
    铁电薄膜和包含薄铁电薄膜的器件

    公开(公告)号：US20080165565A1

    公开(公告)日：2008-07-10

    申请号：US10597052

    申请日：2004-06-17

    申请人： Peter Gunter ,  Payam Rabiei

    发明人： Peter Gunter ,  Payam Rabiei

    IPC分类号： G11C11/22 ,  B29C65/00 ,  H01L41/00 ,  G02B6/10 ,  B29D11/00

    CPC分类号： G02B6/29355 ,  G02B6/12007 ,  G02B6/29394 ,  G02F1/035 ,  G02F1/3551 ,  G02F1/377 ,  G02F2001/392 ,  G11C11/22 ,  H01L21/02197 ,  H01L21/2007 ,  H01L21/31691 ,  H01L21/76254 ,  H01L37/02 ,  H01L41/312

    摘要： A method of producing a device with a ferroelectric crystal thin film on a first substrate including the steps of providing a ferroelectric crystal, of irradiating a first surface of the ferroelectric crystal with ions so that a damaged layer is created underneath the first surface, of bonding a block of material including the first substrate to the ferroelectric crystal to create a bonded element, wherein an interface is formed between the first surface and a second surface of the block, and of heating the bonded element and separating it at the damaged layer, so that a ferroelectric crystal layer remains supported by the first substrate. By this method, very thin films—down to thicknesses of a fraction of a micrometer—of ferroelectric crystals may be fabricated without jeopardizing the monocrystalline structure.

    摘要翻译： 一种在第一基板上制造具有铁电晶体薄膜的器件的方法，包括以下步骤：提供铁电晶体，用离子照射铁电晶体的第一表面，使得在第一表面下方产生损伤层， 包括第一衬底到铁电晶体以形成结合元件的材料块，其中在块的第一表面和第二表面之间形成界面，并且加热粘合元件并将其在损伤层处分离，因此 铁电晶体层保持由第一衬底支撑。 通过这种方法，可以制造非常薄的薄膜，其厚度小于一微米的铁电晶体的一部分，而不会危害单晶结构。

    Microstrip line
    8.
    发明授权
    Microstrip line 失效
    微带线

    公开(公告)号：US06516127B1

    公开(公告)日：2003-02-04

    申请号：US09424600

    申请日：2000-03-14

    申请人： Daniel Fluck ,  Tomas Pliska ,  Peter Gunter

    发明人： Daniel Fluck ,  Tomas Pliska ,  Peter Gunter

    IPC分类号： G02B610

    CPC分类号： G02B6/1347 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12097

    摘要： The process for the manufacture of the rib waveguide (4) is based on the process steps (a) ion implantation of high-energy light ions into a crystal, (b) the application of a mask to the surface (11.1) of this crystal, which defines strips, and (c), the etching of a rib (41) onto the surface (11.1) of this crystal. The process step (a) (ion implantation) causes the formation of a layer (14) with a reduced refraction index at a depth of some micrometers below the surface of the crystal (11.1). By this refraction index barrier (14), the light in the direction vertical to the surface of the crystal is restricted. The lateral guidance of the light is effected by the lateral limits (43.1) and (43.2) of the rib (41). The process is in particular suitable for the manufacture of waveguides in non-linear optical crystals, e.g., ferro-electric oxides (KNbO3, LiNbO3, etc.) and borates (LBO, BBO, etc.). These crystal classes have interesting non-linear-optical characteristics and are suitable for utilization as frequency converters. The manufacturing process in accordance with the invention, in particular the combination of ion implantation and the etching of a rib structure, is adapted to the particular characteristics of the material and enables the manufacture of rib waveguides with a low attenuation, whereby the non-linear optical characteristics of the crystal are maintained. This is an important prerequisite for achieving an efficient frequency conversion.

    摘要翻译： 用于制造肋波导（4）的方法基于工艺步骤（a）将高能轻离子离子注入晶体，（b）将掩模应用于该晶体的表面（11.1） ，其限定条带，以及（c）将肋（41）蚀刻到该晶体的表面（11.1）上。 工艺步骤（a）（离子注入）使晶体（11.1）表面下方几微米深度的折射率降低的层（14）形成。 通过该折射率屏障（14），垂直于晶体表面的方向的光被限制。 光的横向引导通过肋（41）的横向限制（43.1）和（43.2）来实现。该过程特别适用于制造非线性光学晶体中的波导，例如铁电氧化物 （KNbO 3，LiNbO 3等）和硼酸盐（LBO，BBO等）。 这些晶体类具有有趣的非线性光学特性，适用于变频器。 根据本发明的制造方法，特别是离子注入和肋结构的蚀刻的组合适用于材料的特定特性，并且能够制造具有低衰减的肋波导，由此非线性 保持晶体的光学特性。 这是实现高效率变频的重要先决条件。

    Organic materials with non-linear optical properties
    9.
    发明授权
    Organic materials with non-linear optical properties 失效
    有机材料具有非线性光学性质

    公开(公告)号：US4973429A

    公开(公告)日：1990-11-27

    申请号：US311482

    申请日：1989-02-15

    申请人： Gero Decher ,  Bernd Tieke ,  Christian Bosshard ,  Peter Gunter

    发明人： Gero Decher ,  Bernd Tieke ,  Christian Bosshard ,  Peter Gunter

    IPC分类号： G02F1/35 ,  C07C67/00 ,  C07C209/00 ,  C07C211/52 ,  C07C225/22 ,  C07C255/58 ,  C07D213/74 ,  G02F1/355 ,  G02F1/361 ,  H01S3/108

    CPC分类号： C07D213/74 ,  B82Y20/00 ,  C07C211/52 ,  C07C225/22 ,  G02F1/3618

    摘要： A material in the form of a film is described which contains, in an orientated arrangement which does not display point symmetry, compounds of formula I ##STR1## wherein X is .dbd.CH-- or .dbd.N--, R.sup.1 is C.sub.12 -C.sub.30 -alkyl, R.sup.2 is hydrogen or C.sub.1 -C.sub.30 -alkyl, R.sup.3 is --NO.sub.2, --CN, --CF.sub.3, --COCF.sub.3, --SO.sub.2 CH.sub.3 or --SO.sub.2 CF.sub.3, R.sup.4 is hydrogen or is defined in the same way as R.sup.3, R.sup.5 is hydrogen or --NR.sup.6 R.sup.7 and R.sup.6 and R.sup.7 independently of one another are hydrogen or C.sub.1 -C.sub.30 -alkyl, it also being possible for any of the alkyl radicals to be partially fluorinated or perfluorinated.The compounds of formula I can be arranged in Langmuir-Blodgett layer systems. Such systems can be used for example for the manufacture of opto-electronic units.

    摘要翻译： 描述了一种薄膜形式的材料，其以不显示点对称性的取向布置包含其中X为= CH-或= N-的式I化合物（I），R1为C12-C30 - 烷基，R 2是氢或C 1 -C 30 - 烷基，R 3是-NO 2，-CN，-CF 3，-COCF 3，-SO 2 CH 3或-SO 2 CF 3，R 4是氢或以与R 3相同的方式定义，R 5是氢或 -NR 6 R 7和R 6和R 7彼此独立地是氢或C 1 -C 30 - 烷基，也可以将任何烷基部分氟化或全氟化。 式I的化合物可以布置在Langmuir-Blodgett层系统中。 这样的系统可以用于例如制造光电单元。

    Broadband Terahertz radiation generation and detection system and method
    10.
    发明授权
    Broadband Terahertz radiation generation and detection system and method 失效
    宽带太赫兹辐射生成和检测系统及方法

    公开(公告)号：US07894126B2

    公开(公告)日：2011-02-22

    申请号：US12297721

    申请日：2007-04-18

    申请人： Peter Gunter ,  Arno Schneider

    发明人： Peter Gunter ,  Arno Schneider

    IPC分类号： G02F1/355 ,  G02F1/35

    CPC分类号： H01S1/02 ,  G01N21/3581 ,  G02F1/3515 ,  G02F1/3534 ,  G02F2203/13

    摘要： The invention relates to a broadband Terahertz (THz) radiation generation and detection system and method. THz radiation is generated by optical rectification of an ultrashort pump pulse of a first wavelength having a duration in the picosecond- or sub-picosecond range in a first nonlinear optical crystal. The THz radiation is detected by electro-optic sampling or another appropriate method of a probe beam having a second wavelength in a second nonlinear optical crystal. According to the invention, at least one of the following conditions is fulfilled: a) the first wavelength is different from the second wavelength; b) the material of the first nonlinear optical crystal is different from the material of the second nonlinear optical crystal. This makes it possible to choose for the generation and for the detection process—independent of one another—the combination of wavelengths and nonlinear material and possibly other features of the pump/probe pulses like polarization with the highest efficiency for generation and detection of Terahertz pulses, respectively.

    摘要翻译： 本发明涉及一种宽带太赫兹（THz）辐射产生和检测系统及方法。 通过在第一非线性光学晶体中具有皮秒或次皮秒范围的持续时间的第一波长的超短泵浦脉冲的光学整流产生太赫兹辐射。 通过电光采样或在第二非线性光学晶体中具有第二波长的探测光束的另一适当方法来检测太赫兹辐射。 根据本发明，满足以下条件中的至少一个：a）第一波长与第二波长不同; b）第一非线性光学晶体的材料与第二非线性光学晶体的材料不同。 这使得可以选择用于生成和检测过程 - 彼此独立 - 波长和非线性材料的组合以及泵/探针脉冲的可能的其它特征，如具有用于产生和检测太赫兹脉冲的最高效率的极化 ， 分别。