公开(公告)号：US20050280015A1

公开(公告)日：2005-12-22

申请号：US11149258

申请日：2005-06-10

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L29/22 ,  H01L31/0216

CPC分类号： H01L31/02165 ,  H01L27/14685

摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.

摘要翻译： 形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是 形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜 在防反射膜上以及在微反射镜上方的周边周围的膜。

公开(公告)号：US20060151814A1

公开(公告)日：2006-07-13

申请号：US10523799

申请日：2003-11-10

申请人： Ryoichi Ito ,  Hisatada Yasukawa

发明人： Ryoichi Ito ,  Hisatada Yasukawa

IPC分类号： H01L31/112

CPC分类号： H01L27/1443 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Since a plurality of light-receiving elements have heretofore led an electrode from a semiconductor substrate through an impurity-diffused and -buried region, series resistance has been relatively high, so that it has been difficult to improve the frequency characteristics of the light-receiving element. The present invention reduces parasitic capacitance by isolating the light-receiving elements from one another with insulator or dielectric isolation regions 6 and further reduces series resistance by making a direct contact with a P-type semiconductor substrate 2 functioning as an anode region through the medium of a conductor-buried region 11 formed by burying a low-resistance conductor in an opening formed in the isolation region 6, so that the frequency characteristics of the light-receiving element can be improved.

摘要翻译： 由于多个光接收元件迄今已经通过杂质扩散和埋置区域从半导体衬底引出电极，所以串联电阻已经相对较高，从而难以提高光接收的频率特性 元件。 本发明通过绝缘体或电介质隔离区域6将光接收元件彼此隔离来降低寄生电容，并通过与用作阳极区域的P型半导体衬底2直接接触而进一步降低串联电阻 通过在隔离区域6中形成的开口中埋设低电阻导体形成的导体埋入区域11，从而能够提高受光元件的频率特性。

公开(公告)号：US07605049B2

公开(公告)日：2009-10-20

申请号：US11149258

申请日：2005-06-10

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

IPC分类号： H01L21/76 ,  H01L21/311 ,  G02B6/36

CPC分类号： H01L31/02165 ,  H01L27/14685

摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.

摘要翻译： 形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是 形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜 在防反射膜上以及在微反射镜上方的周边周围的膜。

公开(公告)号：US20050189546A1

公开(公告)日：2005-09-01

申请号：US11059500

申请日：2005-02-17

申请人： Hisatada Yasukawa ,  Ryouichi Ito ,  Takaki Iwai ,  Masaki Taniguchi ,  Yasushi Jin

发明人： Hisatada Yasukawa ,  Ryouichi Ito ,  Takaki Iwai ,  Masaki Taniguchi ,  Yasushi Jin

IPC分类号： H01L27/144 ,  H01L27/15 ,  H01L31/0288 ,  H01L31/103

CPC分类号： H01L27/1443 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/50

摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.

摘要翻译： 一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。 第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。 第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。 的第三个地区。

公开(公告)号：US07768090B2

公开(公告)日：2010-08-03

申请号：US11968357

申请日：2008-01-02

申请人： Hisatada Yasukawa

发明人： Hisatada Yasukawa

IPC分类号： H01L31/062

CPC分类号： H01L31/101 ,  H01L27/1443

摘要： A semiconductor photodetector device includes a light receiving operation section converting incident light to an electric signal and a current amplifying operation section amplifying the electric signal. The light receiving operation section includes: a first conductivity type semiconductor layer a formed on a first conductivity type semiconductor substrate; a second conductivity type first semiconductor region formed on the semiconductor layer; and a first conductivity type second semiconductor region formed on the semiconductor layer and separated from the first semiconductor region. The current amplifying operation section includes: the second semiconductor region; a second conductivity type third semiconductor region formed in the semiconductor substrate; a second conductivity type fourth semiconductor region formed on the third semiconductor region and separated from the second semiconductor region.

摘要翻译： 半导体光检测器件包括将入射光转换成电信号的光接收操作部分和放大电信号的电流放大操作部分。 光接收操作部分包括：形成在第一导电类型半导体衬底上的第一导电类型半导体层a; 形成在所述半导体层上的第二导电型第一半导体区域; 以及形成在半导体层上并与第一半导体区分离的第一导电型第二半导体区域。 电流放大操作部分包括：第二半导体区域; 形成在半导体衬底中的第二导电类型的第三半导体区域; 形成在第三半导体区域上并与第二半导体区域分离的第二导电型第四半导体区域。

公开(公告)号：US20090230498A1

公开(公告)日：2009-09-17

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/103

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

公开(公告)号：US20090032896A1

公开(公告)日：2009-02-05

申请号：US12173429

申请日：2008-07-15

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

IPC分类号： H01L31/11

CPC分类号： H01L31/1105 ,  G11B7/13

摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.

摘要翻译： 光学半导体器件包括用于接收入射光的光电晶体管。 光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。 发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

公开(公告)号：US08030728B2

公开(公告)日：2011-10-04

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/00

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

公开(公告)号：US07888765B2

公开(公告)日：2011-02-15

申请号：US12173429

申请日：2008-07-15

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

IPC分类号： H01L31/102

CPC分类号： H01L31/1105 ,  G11B7/13

摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.

摘要翻译： 光学半导体器件包括用于接收入射光的光电晶体管。 光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。 发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

公开(公告)号：US07211829B2

公开(公告)日：2007-05-01

申请号：US11059500

申请日：2005-02-17

申请人： Hisatada Yasukawa ,  Ryouichi Ito ,  Takaki Iwai ,  Masaki Taniguchi ,  Yasushi Jin

发明人： Hisatada Yasukawa ,  Ryouichi Ito ,  Takaki Iwai ,  Masaki Taniguchi ,  Yasushi Jin

IPC分类号： H01L27/15 ,  H01L31/113

CPC分类号： H01L27/1443 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/50

摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.

摘要翻译： 一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。 第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。 第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。 的第三个地区。