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    Optical semiconductor device and manufacturing method for same
    1.
    发明授权
    Optical semiconductor device and manufacturing method for same 失效
    光半导体器件及其制造方法

    公开(公告)号：US07605049B2

    公开(公告)日：2009-10-20

    申请号：US11149258

    申请日：2005-06-10

    申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

    发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

    IPC分类号： H01L21/76 ,  H01L21/311 ,  G02B6/36

    CPC分类号： H01L31/02165 ,  H01L27/14685

    摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.

    摘要翻译： 形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是 形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜 在防反射膜上以及在微反射镜上方的周边周围的膜。

    Optical semiconductor device
    2.
    发明申请
    Optical semiconductor device 审中-公开
    光半导体器件

    公开(公告)号：US20060151814A1

    公开(公告)日：2006-07-13

    申请号：US10523799

    申请日：2003-11-10

    申请人： Ryoichi Ito ,  Hisatada Yasukawa

    发明人： Ryoichi Ito ,  Hisatada Yasukawa

    IPC分类号： H01L31/112

    CPC分类号： H01L27/1443 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Since a plurality of light-receiving elements have heretofore led an electrode from a semiconductor substrate through an impurity-diffused and -buried region, series resistance has been relatively high, so that it has been difficult to improve the frequency characteristics of the light-receiving element. The present invention reduces parasitic capacitance by isolating the light-receiving elements from one another with insulator or dielectric isolation regions 6 and further reduces series resistance by making a direct contact with a P-type semiconductor substrate 2 functioning as an anode region through the medium of a conductor-buried region 11 formed by burying a low-resistance conductor in an opening formed in the isolation region 6, so that the frequency characteristics of the light-receiving element can be improved.

    摘要翻译： 由于多个光接收元件迄今已经通过杂质扩散和埋置区域从半导体衬底引出电极，所以串联电阻已经相对较高，从而难以提高光接收的频率特性 元件。 本发明通过绝缘体或电介质隔离区域6将光接收元件彼此隔离来降低寄生电容，并通过与用作阳极区域的P型半导体衬底2直接接触而进一步降低串联电阻 通过在隔离区域6中形成的开口中埋设低电阻导体形成的导体埋入区域11，从而能够提高受光元件的频率特性。

    Optical semiconductor device and manufacturing method for same
    3.
    发明申请
    Optical semiconductor device and manufacturing method for same 失效
    光半导体器件及其制造方法

    公开(公告)号：US20050280015A1

    公开(公告)日：2005-12-22

    申请号：US11149258

    申请日：2005-06-10

    申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

    发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

    IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L29/22 ,  H01L31/0216

    CPC分类号： H01L31/02165 ,  H01L27/14685

    摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.

    摘要翻译： 形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是 形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜 在防反射膜上以及在微反射镜上方的周边周围的膜。

    Bottle can member, bottle, and thread forming device
    4.
    发明授权
    Bottle can member, bottle, and thread forming device 有权
    瓶罐构件，瓶和线形成装置

    公开(公告)号：US08037734B2

    公开(公告)日：2011-10-18

    申请号：US12874520

    申请日：2010-09-02

    申请人： Tatsuya Hanafusa ,  Ryoichi Ito ,  Masahiro Hosoi ,  Naoki Tasaka

    发明人： Tatsuya Hanafusa ,  Ryoichi Ito ,  Masahiro Hosoi ,  Naoki Tasaka

    IPC分类号： B21D11/10

    CPC分类号： B65D1/0246 ,  B65D41/3447 ,  B67B3/18 ,  Y10S72/715

    摘要： An effective thread number in the thread section which is disposed on the mouth section of the bottle is formed to be 2.2. That is, the thread section is formed such that the thread section 13 should serve effectively in the mouth section such that an interval between a start position and an end position should be 2.0 to 2.5. In the bottle can member 11 which has such a thread section, an outer diameter of the thread section which is formed on the mouth section is 28 to 38 mm. Also, the thickness of the mouth section is 0.25 to 0.4 mm. The thread section which has the effective thread number 2.0 to 2.5 is formed by eight-thread per inch pitch. By doing this, it is possible to put the cap desirably.

    摘要翻译： 设在瓶子的口部上的螺纹部中有效的螺纹数形成为2.2。 也就是说，螺纹部分形成为使得螺纹部分13应有效地在口部中起作用，使得开始位置和结束位置之间的间隔应为2.0至2.5。 在具有这种螺纹部的瓶罐部件11中，形成在口部的螺纹部的外径为28〜38mm。 另外，口部的厚度为0.25〜0.4mm。 有效螺纹数为2.0〜2.5的螺纹部分由八螺纹/英寸间距形成。 通过这样做，可以期望地放置盖。

    BOTTLE CAN MEMBER, BOTTLE, AND THREAD FORMING DEVICE
    5.
    发明申请
    BOTTLE CAN MEMBER, BOTTLE, AND THREAD FORMING DEVICE 有权
    瓶子会员，瓶子和螺纹形成装置

    公开(公告)号：US20100326164A1

    公开(公告)日：2010-12-30

    申请号：US12874520

    申请日：2010-09-02

    申请人： Tatsuya Hanafusa ,  Ryoichi Ito ,  Masahiro Hosoi ,  Naoki Tasaka

    发明人： Tatsuya Hanafusa ,  Ryoichi Ito ,  Masahiro Hosoi ,  Naoki Tasaka

    IPC分类号： B21D11/10

    CPC分类号： B65D1/0246 ,  B65D41/3447 ,  B67B3/18 ,  Y10S72/715

    摘要： An effective thread number in the thread section which is disposed on the mouth section of the bottle is formed to be 2.2. That is, the thread section is formed such that the thread section 13 should serve effectively in the mouth section such that an interval between a start position and an end position should be 2.0 to 2.5. In the bottle can member 11 which has such a thread section, an outer diameter of the thread section which is formed on the mouth section is 28 to 38 mm. Also, the thickness of the mouth section is 0.25 to 0.4 mm. The thread section which has the effective thread number 2.0 to 2.5 is formed by eight-thread per inch pitch. By doing this, it is possible to put the cap desirably.

    摘要翻译： 设在瓶子的口部上的螺纹部中有效的螺纹数形成为2.2。 也就是说，螺纹部分形成为使得螺纹部分13应有效地在口部中起作用，使得开始位置和结束位置之间的间隔应为2.0至2.5。 在具有这种螺纹部的瓶罐部件11中，形成在口部的螺纹部的外径为28〜38mm。 另外，口部的厚度为0.25〜0.4mm。 有效螺纹数为2.0〜2.5的螺纹部分由八螺纹/英寸间距形成。 通过这样做，可以期望地放置盖。

    LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE
    6.
    发明申请
    LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE 有权
    光接收元件和显示设备

    公开(公告)号：US20090159893A1

    公开(公告)日：2009-06-25

    申请号：US12331159

    申请日：2008-12-09

    申请人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

    发明人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

    IPC分类号： H01L31/0368 ,  H01L31/12

    CPC分类号： H01L31/153 ,  G02F2201/58 ,  H01L27/14632 ,  H01L31/112

    摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

    摘要翻译： 光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

    Method of producing toner for developing latent electrostatic images
    7.
    发明授权
    Method of producing toner for developing latent electrostatic images 有权
    制备用于显影静电图像的调色剂的方法

    公开(公告)号：US06368765B2

    公开(公告)日：2002-04-09

    申请号：US09765392

    申请日：2001-01-22

    申请人： Mitsuyoshi Izu ,  Nobuyasu Makino ,  Tomotsugu Miyamoto ,  Yasuaki Iwamoto ,  Ryoichi Ito ,  Kazuyuki Yazaki

    发明人： Mitsuyoshi Izu ,  Nobuyasu Makino ,  Tomotsugu Miyamoto ,  Yasuaki Iwamoto ,  Ryoichi Ito ,  Kazuyuki Yazaki

    IPC分类号： G03G906

    CPC分类号： G03G9/0808 ,  Y10T428/2982

    摘要： A method of producing a toner for developing latent electrostatic images includes the steps of preliminarily grinding a toner composition having at least a binder resin and a coloring agent to prepare a preliminarily ground product, and finely pulverizing the preliminarily ground product using a pulverizer to produce toner particles, wherein the preliminarily ground product satisfies conditions (1) and (2): Dv≧D10  (1) D50

    摘要翻译： 制备用于显影静电潜像的调色剂的方法包括以下步骤：预先研磨具有至少粘合剂树脂和着色剂的调色剂组合物以制备预先研磨的产物，并使用粉碎机将预先研磨的产物细粉碎以产生调色剂 颗粒，其中预先研磨的产物满足条件（1）和（2）：其中Dv是预先研磨产物的重量平均直径，D10是当累积的测量时颗粒的累积颗粒达到10％时的重量平均直径 颗粒分布，D50是当累积粒子分布的测量时颗粒的累积数达到50％时的重量平均直径。