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公开(公告)号：US07796669B2
公开(公告)日：2010-09-14
申请号：US11525088
申请日：2006-09-22
申请人： Ryoji Hiroyama , Teruaki Miyake , Yuzuru Miyata
发明人： Ryoji Hiroyama , Teruaki Miyake , Yuzuru Miyata
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/2009 , H01S5/2206 , H01S5/2231 , H01S5/3063 , H01S5/3211 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.
摘要翻译： 可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。 该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。 包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。
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公开(公告)号：US20070069221A1
公开(公告)日：2007-03-29
申请号：US11525088
申请日：2006-09-22
申请人： Ryoji Hiroyama , Teruaki Miyake , Yuzuru Miyata
发明人： Ryoji Hiroyama , Teruaki Miyake , Yuzuru Miyata
IPC分类号： H01L33/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/2009 , H01S5/2206 , H01S5/2231 , H01S5/3063 , H01S5/3211 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.
摘要翻译： 可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。 该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。 包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。
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公开(公告)号：US5608752A
公开(公告)日：1997-03-04
申请号：US430497
申请日：1995-04-28
申请人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
发明人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
CPC分类号： H01S5/2231 , H01S5/0658
摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.
摘要翻译： 在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中， 注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子 可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。 光输出面的反射率设定在10〜20％的范围内。
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公开(公告)号：US5610096A
公开(公告)日：1997-03-11
申请号：US536370
申请日：1995-09-29
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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5.发明授权
公开(公告)号：US5506170A
公开(公告)日：1996-04-09
申请号：US365176
申请日：1994-12-28
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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公开(公告)号：US5416790A
公开(公告)日：1995-05-16
申请号：US147779
申请日：1993-11-04
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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