公开(公告)号：US5416790A

公开(公告)日：1995-05-16

申请号：US147779

申请日：1993-11-04

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5610096A

公开(公告)日：1997-03-11

申请号：US536370

申请日：1995-09-29

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5506170A

公开(公告)日：1996-04-09

申请号：US365176

申请日：1994-12-28

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5608752A

公开(公告)日：1997-03-04

申请号：US430497

申请日：1995-04-28

申请人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

发明人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0658

摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.

摘要翻译： 在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中， 注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子 可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。 光输出面的反射率设定在10〜20％的范围内。

公开(公告)号：US5963572A

公开(公告)日：1999-10-05

申请号：US773346

申请日：1996-12-26

申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

公开(公告)号：US6144623A

公开(公告)日：2000-11-07

申请号：US14980

申请日：1998-01-28

申请人： Yasuaki Inoue ,  Takenori Goto ,  Atsushi Tajiri ,  Kazushi Mori ,  Minoru Sawada ,  Akira Ibaraki ,  Masayuki Shono

发明人： Yasuaki Inoue ,  Takenori Goto ,  Atsushi Tajiri ,  Kazushi Mori ,  Minoru Sawada ,  Akira Ibaraki ,  Masayuki Shono

IPC分类号： G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B7/00

CPC分类号： G11B7/1353 ,  G11B7/123 ,  G11B7/131 ,  G11B7/0912

摘要： A transmission-type holographic optical element has a four-segment holographic surface divided into four regions of equal areas by virtual dividing lines which are perpendicular to each other. The first dividing line is at an angle with respect to the track direction of an optical disk and the second dividing line is at an angle with respect to the radial direction of the optical disk before tracking phase adjustment. The first dividing line coincides with the track direction of the optical disk and the second dividing line coincides with the radial direction of the optical disk after tracking phase adjustment. A four-segment photodetection part is divided into four photodetection parts of equal areas by a dividing line substantially parallel to the radial direction of the optical disk and a dividing line perpendicular thereto. Parts of a main beam diffracted in two regions located on first diagonal positions of the four-segment holographic surface are condensed as condensed spots on adjacent positions of the first dividing line of the four-segment photodetection part on opposite sides, and parts of the main beam diffracted in the remaining two regions located on second diagonal positions are condensed as condensed spots on separate positions of the second dividing line of the four-segment photodetection part on opposite sides.

摘要翻译： 透射型全息光学元件具有通过彼此垂直的虚拟分割线被划分为相等面积的四个区域的四段全息表面。 第一分割线相对于光盘的轨道方向成一定角度，并且第二分割线在跟踪相位调整之前相对于光盘的径向方向成一定角度。 第一分割线与光盘的轨道方向一致，并且第二分割线在跟踪相位调整之后与光盘的径向一致。 四段光电检测部分通过基本上平行于光盘的径向的分割线和与其垂直的划分线分成四个具有相等面积的光电检测部分。 在四段全息表面的第一对角位置上的两个区域中衍射的主光束的部分在相对侧的四段光检测部分的第一分割线的相邻位置上被聚集为聚集点，主要部分 在位于第二对角位置的剩余两个区域中衍射的光束在相对侧的四段光检测部分的第二分割线的分离位置上被冷凝为聚光点。

公开(公告)号：US06339563B2

公开(公告)日：2002-01-15

申请号：US09725239

申请日：2000-11-29

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7095

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the +1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在+ 1方向衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US06501715B2

公开(公告)日：2002-12-31

申请号：US09998295

申请日：2001-12-03

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7095

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the ±1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在±1度方向上衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US06181667B2

公开(公告)日：2001-01-30

申请号：US09041008

申请日：1998-03-12

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7135

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the +1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在+ 1方向衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US5960019A

公开(公告)日：1999-09-28

申请号：US828034

申请日：1997-03-27

申请人： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

发明人： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/222 ,  H01S5/32316 ,  H01S5/3432

摘要： A semiconductor laser device comprises a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a current blocking layer having a stripe-shaped opening having a predetermined width W for restricting a current path and forming the current path, and having a larger band gap than that of the cladding layer of the second conductivity type and having a smaller refractive index than that of the cladding layer of the second conductivity type. A difference .DELTA.n between effective refractive indexes in a region, which corresponds to the opening, in the active layer and an effective refractive index in a region, which corresponds to both sides of the opening, in the active layer and the width W (.mu.m) of the opening are so set as to satisfy a predetermined relationship. The difference .DELTA.n between the effective refractive indexes is set by selecting the A1 composition ratio of the current blocking layer and the thickness of the cladding layer of the second conductivity type on the both sides of the opening.

摘要翻译： 半导体激光装置包括第一导电类型的包覆层，有源层，第二导电类型的包覆层和具有用于限制电流路径的预定宽度W的条形开口的电流阻挡层，并形成 电流路径，并且具有比第二导电类型的包层更大的带隙，并且具有比第二导电类型的包覆层的折射率更小的折射率。 与有源层中的开口对应的区域中的有效折射率与对应于开口的两侧的区域中的有效折射率在有效层中的有效折射率和宽度W（mu m）设定为满足规定的关系。 通过选择开口两侧的电流阻挡层的A1组成比和第二导电类型的包覆层的厚度来设定有效折射率之间的差ΔTAn。