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公开(公告)号：US08628908B2
公开(公告)日：2014-01-14
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译： 提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂 并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。 抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。
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公开(公告)号：US20120225386A1
公开(公告)日：2012-09-06
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译： 提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂 并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。 抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。
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公开(公告)号：US08703384B2
公开(公告)日：2014-04-22
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及 （B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。 轮廓，DOF和粗糙度的光刻性能得到改善。
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公开(公告)号：US20120135350A1
公开(公告)日：2012-05-31
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及 （B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。 轮廓，DOF和粗糙度的光刻性能得到改善。
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公开(公告)号：US20120100486A1
公开(公告)日：2012-04-26
申请号：US13243204
申请日：2011-09-23
IPC分类号： G03F7/20 , C07J33/00 , C07D333/46
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。
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公开(公告)号：US08597869B2
公开(公告)日：2013-12-03
申请号：US13243204
申请日：2011-09-23
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。
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7.发明授权Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition 有权聚合物，化学放大抗蚀剂组合物和使用所述化学放大抗蚀剂组合物的图案化工艺公开(公告)号：US08900793B2
公开(公告)日：2014-12-02
申请号：US13476700
申请日：2012-05-21
CPC分类号： G03F7/2041 , C08F24/00 , C08F220/38 , G03F7/0045 , G03F7/0397 , G03F7/11 , G03F7/30 , Y10S430/111
摘要： There is disclosed a polymer having a repeating unit shown by the following general formula (1). There can be, in a photolithography using a high energy beam such as an ArF excimer laser beam and an EUV as a light source, (1) a polymer that gives a resist composition having an appropriate adhesion with a substrate and being capable of forming a pattern having excellent resolution, especially an excellent rectangular pattern profile, (2) a chemically amplified resist composition containing the said polymer, and (3) a patterning process using the said chemically amplified resist composition.
摘要翻译： 公开了具有下述通式（1）所示的重复单元的聚合物。 在使用诸如ArF准分子激光束和EUV作为光源的高能量光束的光刻中可以存在：（1）提供具有与基板的适当粘合性并且能够形成 具有优异分辨率的图案，特别是优异的矩形图案，（2）含有所述聚合物的化学放大抗蚀剂组合物，和（3）使用所述化学放大抗蚀剂组合物的图案化工艺。
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公开(公告)号：US08535869B2
公开(公告)日：2013-09-17
申请号：US13214295
申请日：2011-08-22
CPC分类号： C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference.
摘要翻译： 提供具有亲水性酚羟基或具有特定阴离子的乙二醇链的萘基锍阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，具有抑制浸入水中的溶解和较少图案依赖性或暗亮差异的优点。
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9.发明申请NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权含氮单体，聚合物，电阻组合物和方法公开(公告)号：US20120183904A1
公开(公告)日：2012-07-19
申请号：US13349754
申请日：2012-01-13
IPC分类号： G03F7/20 , G03F7/039 , C07D211/44 , C08F226/06
CPC分类号： G03F7/0397 , C07D211/44 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/2037 , G03F7/2039 , G03F7/2041 , G03F7/30
摘要： A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要翻译： 具有更好性能的化学放大型正性抗蚀剂组合物可以使用其中掺入猝灭剂的聚合物，特别是包含具有氨基甲酸酯结构的重复单元的聚合物来配制，该聚合单元用酸分解以产生氨基，以及任选的具有酸不稳定性的重复单元 能够在酸的作用下产生羧基和/或羟基的基团。 该聚合物对于抑制酸的扩散非常有效，并且自身扩散，并且组合物以高分辨率形成矩形轮廓的图案。
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10.发明授权Nitrogen-containing monomer, polymer, resist composition, and patterning process 有权含氮单体，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US09207534B2
公开(公告)日：2015-12-08
申请号：US13349754
申请日：2012-01-13
IPC分类号： G03F7/039 , G03F7/004 , G03F7/30 , G03F7/20 , C07D211/44
CPC分类号： G03F7/0397 , C07D211/44 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/2037 , G03F7/2039 , G03F7/2041 , G03F7/30
摘要： A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要翻译： 具有更好性能的化学放大型正性抗蚀剂组合物可以使用其中掺入猝灭剂的聚合物，特别是包含具有氨基甲酸酯结构的重复单元的聚合物来配制，该聚合单元用酸分解以产生氨基，以及任选的具有酸不稳定性的重复单元 能够在酸的作用下产生羧基和/或羟基的基团。 该聚合物对于抑制酸的扩散非常有效，并且自身扩散，并且组合物以高分辨率形成矩形轮廓的图案。
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