公开(公告)号：US20120056222A1

公开(公告)日：2012-03-08

申请号：US13037914

申请日：2011-03-01

申请人： Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Eishi TSUTSUMI ,  Takanobu KAMAKURA ,  Shinji NUNOTANI ,  Masaaki OGAWA

发明人： Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Eishi TSUTSUMI ,  Takanobu KAMAKURA ,  Shinji NUNOTANI ,  Masaaki OGAWA

IPC分类号： H01L33/58 ,  H01L33/38 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。 发光层位于第一半导体层和第二半导体层之间。 第一电极层位于与第一半导体层相对的第二半导体层的一侧。 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。 金属部分接触第二半导体层。 沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

公开(公告)号：US20120223348A1

公开(公告)日：2012-09-06

申请号：US13221319

申请日：2011-08-30

申请人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20130075778A1

公开(公告)日：2013-03-28

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

发明人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

IPC分类号： H01L33/40 ,  H01B5/00 ,  B82Y99/00

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US20120228654A1

公开(公告)日：2012-09-13

申请号：US13221326

申请日：2011-08-30

申请人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US20130075771A1

公开(公告)日：2013-03-28

申请号：US13412044

申请日：2012-03-05

申请人： Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Ryota KITAGAWA ,  Kenji NAKAMURA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

发明人： Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Ryota KITAGAWA ,  Kenji NAKAMURA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

IPC分类号： H01L33/10

CPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

公开(公告)号：US20130081683A1

公开(公告)日：2013-04-04

申请号：US13628738

申请日：2012-09-27

申请人： Kumi MASUNAGA ,  Akira FUJIMOTO ,  Eishi TSUTSUMI ,  Koji ASAKAWA ,  Tsutomu NAKANISHI ,  Hideyuki NISHIZAWA ,  Ryota KITAGAWA

发明人： Kumi MASUNAGA ,  Akira FUJIMOTO ,  Eishi TSUTSUMI ,  Koji ASAKAWA ,  Tsutomu NAKANISHI ,  Hideyuki NISHIZAWA ,  Ryota KITAGAWA

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/06 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/18 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.

摘要翻译： 本发明提供一种通过使用增强的电场在传播载流子激发中具有高效率的光电转换元件。 光电转换元件包括光电转换层，该光电转换层包括放置在两个电极层之间的两个或多个层叠半导体层，其特征在于，在光电转换层中的半导体层之间具有电场增强层。 电场增强层设置有金属微细结构，微细结构例如为多孔膜或一组纳米物体，例如非常小的球体。

公开(公告)号：US20090242925A1

公开(公告)日：2009-10-01

申请号：US12363198

申请日：2009-01-30

申请人： Ryota KITAGAWA ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

发明人： Ryota KITAGAWA ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2933/0091

摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％以上的金属部分直线地继续而不断开，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US20100220757A1

公开(公告)日：2010-09-02

申请号：US12717750

申请日：2010-03-04

申请人： Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA

发明人： Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA

IPC分类号： H01S5/02 ,  H01L33/10 ,  H01L33/00 ,  H01L33/44

CPC分类号： H01L33/22 ,  H01L33/005 ,  H01S5/187

摘要： One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered film, plural semiconductor layers and an active layer are stacked. The light-extraction surface is provided on the multilayered film, and plural micro-projections are formed thereon. These micro-projections have flat top faces parallel to the multilayered film, and they can be formed by an etching process. The etching process is performed by use of a dot pattern as a mask, and the dot pattern is formed by phase separation of a block copolymer.

摘要翻译： 本发明的一个实施方案提供了一种半导体发光元件，其具有高的光提取效率和光提取表面与密封树脂之间的优异粘附性，并且还提供了其生产方法。 该元件包括半导体多层膜和光提取表面。 在多层膜中堆叠多个半导体层和有源层。 在多层膜上设置光提取面，在其上形成有多个微突起。 这些微型突起具有与多层膜平行的平坦顶面，并且它们可以通过蚀刻工艺形成。 通过使用点阵图案作为掩模进行蚀刻处理，并且通过嵌段共聚物的相分离形成点图案。